United Microelectronics Corp.

Chung-Po Hsu

Shih-Ching Chen

Ming-Chi Lin

Guan-Jiun Liu

Chi-Jui Sung

A method for fabricating a semiconductor device to increase the effective concentration of a doped region. A first dopant is implanted into a substrate. A second dopant is implanted into the substrate. The first dopant has a lower diffusion coefficient, a higher energy gap, and a higher atomic mass than those of the second dopant.

Method of fabricating a semiconductor device

This invention provides a concave shallow trench isolation structure, and a fabricating method of a shallow trench isolation structure with concave bottom corners. The concave shape of the structure prevents stress centralization, and avoids leakage current or punch through in the source/drain regions.

Growing community of inventors

Taipei Hsien, Taiwan

Chung-Po Hsu