Rca Inc.

General Electric Company

Chung P Wu

George L Schnable

Jacques I Pankove

Frank Kolondra

Edward Curtis Douglas

Charles William Mueller

Arye Rosen

Lawrence K White

Ronald Keith Smeltzer

Bansang W Lee

Roger E Stricker

Disclosed herein is a method of using an apparatus for ion implanation providing a flood of electrons to neutralize the charge on an ion-implanted wafer after implantation to prevent electrostatic sticking attraction between the wafer and the support mechanism.

Method of reducing electrostatic charge on ion-implanted devices

A light emitting device comprises a body of silicon having regions of opposite conductivity type and a region about the p-n junction between the regions of opposite conductivity type which contains lattice defects and excess hydrogen. This device emits light at a wavelength between about 1.2 and about 1.3 micrometers. The method of the invention includes the steps of damaging the region about the p-n junction and hydrogenating the damage region.

Silicon light emitting device and a method of making the device

There is disclosed herein an ion implantation apparatus providing for electron flooding during ion implantation to not only neutralize the positive space-charge on an ion beam but also provide a slightly negative space-charge on the beam whereby accumulated positive charges on an insulated device is obviated and only harmless negative charges remain.

Method for preventing arcing in a device during ion-implantation

A process of forming a low-dose ion implant of one or more of phosphorus, arsenic or boron is described. The desired impurity ion implant is preceded by an amorphizing implant of at least about 10.sup.15 ions/cm.sup.2 of fluorine ions. The implants are advantageously annealed at a temperature below about 800.degree. C.

Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing with

An ion implantation apparatus and method are disclosed for reducing contamination of doubly-charged ions by singly-charged ions. A liner, with a grooved or smooth surface, formed of beryllium or graphite reduces secondary electron scattering into the ion beam. Solid red phosphorus reduces the operating vacuum thereby reducing contamination.

Method and apparatus for implantation of doubly-charged ions

An improvement in the rapid alloying of aluminum metallization on a silicon substrate is provided. The structure is heated to alloying temperature for under a minute in a suitable heating means in a reducing atmosphere and rapidly cooled to under 200.degree. C. in not longer than about one minute after cessation of heating. A preferred reducing atmosphere is forming gas.

Alloying of aluminum metallization

The contact resistance between a layer of conductive material, such as a metal or conductive polycrystalline silicon, and either a body of single crystalline silicon or another layer of the conductive material is reduced by implanting ions of a neutral material through the conductive layer into either the silicon body or the other conductive layer. After the implantation of the neutral ions, the device is annealed.

Method of forming semiconductor contacts by implanting ions of neutral

In making a semiconductor device wherein a film of a non-single crystalline silicon, such as polycrystalline or amorphous silicon, is deposited on a substrate and then doped, particularly by ion implantation, to make the film conductive, the conductivity of the film is increased by pre-annealing the film at a temperature of 1000.degree. C. to 1200.degree. C. in an inert ambient before doping the film.

Method of making a semiconductor device to improve conductivity of

A beam of electromagnetic radiation such as a pulsed laser beam is used to anneal materials, such as semiconductor materials, without the formation of puddles. Puddles are caused by raising the temperature of the material to its melting temperature by a laser beam. The beam of the pulsed laser can be scanned over the surface of the semiconductor material without raising the temperature to the melting temperature and with at least about 50% overlap of each irradiated surface portion whereby extensive surface areas can be annealed rapidly without puddling.

Electromagnetic radiation annealing of semiconductor material

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Solar cell structure incorporating a novel single crystal silicon

A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

Method of making selective crystalline silicon regions containing

The method involves the formation of conductive, polycrystalline silicon lines and vias by the conversion of amorphous silicon in contact with the underlying silicon substrate through the use of a laser annealing process.

Method of forming polycrystalline silicon lines and vias on a silicon

A method of rounding a sharp semiconductor projection jutting out from a principal body of semiconductor material comprises the step of irradiating the projection with a laser pulse having an energy density of less than about 1.5 joules/cm.sup.2.

Laser rounding a sharp semiconductor projection

A method of making an Impatt diode capable of operating at millimeter wave frequencies in which an epitaxial layer of the thickness desired for the diode is deposited on a substrate. Conductivity modifiers are implanted into the epitaxial layer to form one active region and a high conductivity region between the one active region and the surface of the epitaxial layer. A heat sink which also serves as a handle is formed on the epitaxial layer. The substrate is removed and conductivity modifiers are implanted into the other side of the epitaxial layer to the other active region and a high conductivity region between the other active region and the other surface of the epitaxial layer. After the implants the epitaxial layer is annealed. After the first implants the epitaxial layer may be annealed by either thermal or laser annealing. However, after the second implants the epitaxial layer must be laser annealed.

Method of making an impatt diode utilizing a combination of epitaxial

A method of fabricating a low-resistivity polycrystalline silicon film deposited on a substrate comprises the steps of doping the polycrystalline silicon film with boron in situ while depositing the film, to a concentration greater than 1.times.10.sup.20 atoms/cm.sup.3, and then irradiating the film with a laser pulse. The present method may be utilized to fabricate a polycrystalline silicon film having a relatively small temperature coefficient of resistivity by electrically connecting a first irradiated part of the film with a second non-irradiated part in a manner allowing the two parts, having different temperature coefficients of resistivity, to compensate each other.

Growing community of inventors

Mercerville, NJ, United States of America

Chung P Wu