United Microelectronics Corp.

Chung-Min Tsai

Sheng-Hsu Liu

Yi-Wei Chen

Yu-Ming Hsu

Tsang-Hsuan Wang

Chun-Liang Kuo

Chieh-Lung Wu

Man-Ling Lu

Jhen-Cyuan Li

Chih-Chung Chen

Neng-Hui Yang

Tsung-Mu Yang

Ming-Hua Chang

Tien-Chen Chan

Chun-Yu Chen

Hsin-Chang Wu

Fu-Cheng Yen

A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.

Method for fabricating semiconductor device

A fin structure for a semiconductor device, such as a FinFET structure, has first and second semiconductor layers and an air gap between the layers. The second semiconductor layer includes a recessed portion, the air gap is located in the recessed portion, and the recessed portion has an upwardly-opening acute angle in the range from about 10&#xb0; to about 55&#xb0;. The air gap may prevent current leakage. A FinFET device may be manufactured by first recessing and then epitaxially re-growing a source/drain fin, with the regrowth starting over a tubular air gap.

Bottom-up epitaxy growth on air-gap buffer

A semiconductor device is disclosed. The semiconductor device includes: a substrate, a gate structure on the substrate, a spacer adjacent to the gate structure, an epitaxial layer in the substrate adjacent to two sides of the spacer, and a dislocation embedded within the epitaxial layer. Preferably, the top surface of the epitaxial layer is lower than the top surface of the substrate, and the top surface of the epitaxial layer has a V-shape.

Semiconductor device

A fin structure for a semiconductor device, such as a FinFET structure, has first and second semiconductor layers and an air gap between the layers. The air gap may prevent current leakage. A FinFET device may be manufactured by first recessing and then epitaxially re-growing a source/drain fin, with the regrowth starting over a tubular air gap.

A method for fabricating semiconductor device is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a gate structure on the substrate; (c) performing a first deposition process to form a first epitaxial layer adjacent to the gate structure and performing a first etching process to remove part of the first epitaxial layer at the same time; and (d) performing a second etching process to remove part of the first epitaxial layer.

Semiconductor device and method for fabricating the same

A semiconductor device is provided includes a substrate, a gate structure formed on the substrate, an epitaxial source/drain structure respectively formed at two sides of the gate structure, and a boron-rich interface layer. The boron-rich interface layer includes a bottom-and-sidewall portion and a top portion, and the epitaxial source/drain structure is enclosed by the bottom-and-sidewall portion and the top portion.

Growing community of inventors

Tainan, Taiwan

Chung-Min Tsai