Nan Ya Technology Corporation

Other

Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Min Lin

Chih-Kun Chen

Hsin-Chuan Tsai

Yao-Hsiung Kung

Chyi-Tsong Ni

Jen-Hao Liu

Ching-Hung Chang

Li-Chung Liu

Shan-Chang Wang

Jiun-Bo Wang

Hsiao-Yin Lin

An embodiment of the disclosure provides a semiconductor device. The semiconductor device includes a plurality of metallization layers comprising a topmost metallization layer. The topmost metallization layer has two metal features having a thickness Tand being separated by a gap. A composite passivation layer comprises a HDP CVD oxide layer under a nitride layer. The composite passivation layer is disposed over the metal features and partially fills the gap. The composite passivation layer has a thickness Tabout 20% to 50% of the thickness T

Passivation layer for semiconductor devices

A device used for detecting the clamping force of a processed object and a method thereof are proposed. The device comprises a detection unit, a basis component and a pressure detection component disposed on the basis component. The basis component having the pressure detection component is closely placed between pivotal rods so that the detection unit can detect variation of electric properties of the pressure detection component to adjust the spacing between the pivotal rods, hence facilitating adjustment of the clamping force.

Device used for detecting clamping force of processed object and method thereof

A humidity sensor and fabrication method thereof. In the humidity sensor of the present invention, two comb-type electrodes with a plurality of teeth are disposed on a semiconductor substrate. A SiO sensing film is disposed between the teeth of the two comb-type electrodes on the substrate. A predetermined voltage is applied between the two comb-type electrodes, a leakage current between the two electrodes is detected, and the humidity in the environment is measured according thereto.

Humidity sensor and fabrication method thereof

A method of measuring pore depth on the surface of a polishing pad during processing. In the present invention, a planar ultrasound sensing device is disposed a predetermined distance above the surface of a polishing pad. The planar ultrasound sensing device sends out a plurality of ultrasound signals to the surface and the pores therein, and receives a plurality of reflected signals from the pad surface and constituent pores. The difference between pore depth and the surface is determined to establish first depth difference data according to the time delay in the reflected signals. The polishing pad is rotated to obtain second to Nth depth difference data. A relational image relative to the surface and the pores of the polishing pad is obtained according to the first to Nth depth difference data.

Method of measuring pore depth on the surface of a polishing pad

A chemical mechanical polishing apparatus comprises a platen having a polishing pad thereon, a wafer carrier holding a wafer on the polishing pad, a washer having a cleaning device; and a dresser. The dresser comprises a bottom disk contacting the polishing pad. The dresser can move between the polishing pad and the washer. When the dresser moves into the washer, a diamond zone on the bottom disk cleans the polishing pad, and the cleaning device cleans the diamond zone.

Chemical mechanical polishing apparatus

An improved yarn feeder for knitting machines includes a frame, a feeding reel, a brake, a press block, a pulley, a holder, a transmission spindle and a yarn guide. The feeding reel includes a driven wheel which has a top flange with a center opening and a plurality of equally spaced rods extending downward from bottom surface of the top flange, and a driving wheel which has spoke like ribs each has a slot opening at a free end thereof for engaging with an elongated bar at a lower portion which has a &ldquo;8&rdquo; shaped crosssection. The driving wheel may engage with the driven wheel through the center opening with the top end of the elongated bar engaged with a cavity formed in the bottom side of the top flange between a pair of adjacent rods. The feeding reel and the yarn feeder may be made with greater precision at a lower cost than conventional yarn feeder.

Yarn feeder for knitting machine

A underlayer process for high O.sub.3 /TEOS interlayer dielectric deposition is disclosed. First, a layer of metal pattern is defined on a semiconductor substrate, then a layer of dielectric underlayer is deposited, next, a high O.sub.3 /TEOS interlayer dielectric is formed to achieve planarization. The key point of this process is to apply materials with higher refraction index than conventional PE-TEOS for forming interlayer dielectric underlayer. The mentioned material can be PE-SiH.sub.4 with a constant or decreasing refraction index with the distance from the semiconductor substrate. The underlayer can also be bi-layer structure consisting of high refraction index bottom layer and low refraction index surface layer. This invention can effectively suppress the problem caused from high surface sensitivity of O.sub.3 /TEOS, and improve the quality of interlayer dielectric planarization process dramatically.

Growing community of inventors

Taipei, Taiwan

Chung-Min Lin