Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Min Fu

Wen-Hao Chen

Wan-Yu Lo

Yung-Fong Lu

Chung-Hsing Wang

Wen-Ju Preet Yang

Chin-Chang Hsu

Chi-Yeh Yu

Meng-Fu You

Po-Hsiang Huang

Yuan-Te Hou

Wen-Hao Cheng

Yu-Chyi Harn

Hsien-Wei Chen

Yi-Kan Cheng

Chin-Chou Liu

Chih-Chiang Tu

Huang-Yu Chen

Yu-Jung Chang

Huan Chi Tseng

Huang-Sheng Lin

Ping-Heng Yeh

C R Hsu

Ajay Nandoriya

Yung-Chow Peng

Dian-Hau Chen

Cheng-Chieh Hsieh

William Wu Shen

Ying-Chou Cheng

Zhe-Wei Jiang

King-Ho Tam

Yen-Pin Chen

Meng-Xiang Lee

Li-Chung Hsu

Chung-Kai Lin

Feng-Yuan Chiu

I-Chang Shih

Chiu Hsiu Chen

Chih-Yeh Yu

Shih-Cheng Yang

Jerry Kao

Jui-Jung Yan

Ricky Yang

An integrated circuit structure includes a plurality of power or ground rails for an integrated circuit, the plurality of power or ground rails vertically separated on a plane, a plurality of functional cells between the plurality of power rails or between the plurality of ground rails or both, and a jumper connection between the vertically separated power rails or ground rails, the jumper connection within a vertically aligned gap among the plurality of functional cells. A method of mitigating IR drop and electromigration affects in an integrated circuit includes forming a plurality of power rails or ground rails, each of the power rails or ground rails on separate vertical levels of a plane of an integrated circuit layout and connecting with a jumper connection at least two power rails or two ground rails, the jumper connection within a vertically aligned gap among cells of the integrated circuit.

Apparatus and method for mitigating dynamic IR voltage drop and electromigration affects

A method of making a semiconductor device includes determining, by a processor, a first pattern density of a first region, determining a second pattern density of a second region, determining a pattern density gradient from the first region to the second region, determining whether the pattern density gradient exceeds a pattern density gradient threshold and performing a placement or a routing of the semiconductor device if the pattern density gradient is less than or equal to the pattern density gradient threshold.

Method of making semiconductor device and system for performing the same

Among other things, techniques and systems for 3D modeling of a FinFET device and for detecting a variation for a design layout based upon a 3D FinFET model are provided. For example, a fin height of a FinFET device is determined based upon imagery of the FinFET device. The fin height and a 2D FinFET model for the FinFET device are used to create a 3D FinFET model. The 3D FinFET model takes into account the fin height, which is evaluated to identify fin height variations amongst FinFET devices within the design layout. For example, a fin height variation is determined based upon a proximity pattern density, a fin pitch, a gate length, or other parameters/measurements. A voltage threshold variation is determined based upon the fin height variation. This allows the design layout to be modified to decrease the variation.

3D device modeling for FinFET devices

The present disclosure provides a method. The method includes obtaining an integrated circuit (IC) layout. The method includes providing a polishing process simulation model. The method includes performing a lithography pattern check (LPC) process to the IC layout. The LPC process is performed at least in part using the polishing process simulation model. The method includes detecting, in response to the LPC process, possible problem areas on the IC layout. The method includes modifying the polishing process simulation model. The method includes repeating the performing the LPC process and the detecting the possible problem areas using the modified polishing process simulation model.

Topography-aware lithography pattern check

A system comprises an electron beam directed toward a three-dimensional object with one tilting angle and at least two azimuth angles, a detector configured to receive a plurality of scanning electron microscope (SEM) images from the three-dimensional object and a processor configured to calculate a height and a sidewall edge of the three-dimensional object.

Three-dimensional semiconductor image reconstruction apparatus and method

One or more techniques or systems for mitigating density gradients between two or more regions of cells are provided herein. In some embodiments, an array of cells is associated with a dummy region. For example, the array of cells includes an array of gates and an array of OD regions. In some embodiments, the array of gates includes a first set of gates associated with a first gate dimension and a second set of gates associated with a second gate dimension. In some embodiments, the array of OD regions includes a first set of OD regions associated with a first OD dimension and a second set of OD regions associated with a second OD dimension. In this manner, at least one of a pattern density, gate density, or OD density is customized to a region associated with active cells, thus mitigating density gradients between respective regions.

Density gradient cell array

A method includes identifying at least one local power segment of a circuit, estimating at least one performance parameter of the at least one power segment based on a computer-based simulation of the circuit, and changing a design of the circuit based on at least one electromigration avoidance strategy if the at least one parameter is greater than or equal to a threshold value. A data file representing the circuit is stored if the at least one parameter is less than the threshold value.

System and method of electromigration avoidance for automatic place-and-route

Embodiments of the present invention are a system, a computer program product, and a method for implementing an integrated circuit design. The method for implementing an integrated circuit design includes accessing an original electronic representation of an integrated circuit layout from a first user file, and accessing a defined sensitivity index that characterizes an impact of the dummy pattern on the functional component. The impact of the dummy pattern on the functional component is analyzed and it is determined whether the impact is within a limit of the sensitivity index. One of a plurality of features of the dummy pattern is adjusted if the impact is not within the limit to form a generated electronic representation of a modified integrated circuit layout, and the generated electronic representation is output to a second user file. The integrated circuit layout includes a dummy pattern and a functional component.

Dummy pattern performance aware analysis and implementation

In some embodiments, in a method, a layout of a circuit is received. A netlist with indicated pattern density (PD)-dependent mismatch elements associated with different PDs, respectively, is generated using the layout. A simulation on the netlist is performed such that when the PD-dependent mismatch elements are modeled in the simulation, corresponding model parameters of the PD-dependent mismatch elements are generated using variation distributions with different spreads.

Pattern density-dependent mismatch modeling flow

A computer implemented method comprises accessing a 3D-IC model stored in a tangible, non-transitory machine readable medium, processing the model in a computer processor to generate a temperature map containing temperatures at a plurality of points of the 3D-IC under the operating condition; identifying an electromigration (EM) rating factor, and calculating and outputting from the processor data representing a temperature-dependent EM current constraint at each point.

System and method of electromigration mitigation in stacked IC designs

A method includes providing a first layout of a semiconductor device comprising a plurality of cells representing circuit elements, and providing a cell library comprising a plurality of cells in a processor. The circuit elements comprise a plurality of fin field effect transistors (Fin-FETs). Each of the plurality of cells in the cell library is displayed with a respectively different marker indicating a respective fin height. The method further includes generating a second layout for the semiconductor device to be fabricated, by placing or replacing at least one cell from the cell library in a respective location in the first layout. The at least one cell from the cell library comprises a Fin-FET with a respective fin height different from an adjacent Fin-FET in the second layout.

Method and system for designing Fin-FET semiconductor device

Apparatus includes a machine readable storage medium for storing a template library having at least one template. The template is to include a first layout representation of at least one pattern to be formed by multi-patterning a single layer of an IC. The pattern has a plurality of portions to be formed using a plurality of respectively different photomasks. The first layout representation includes data identifying on which photomask each portion is to be located. An electronic design automation (EDA) tool includes a processor configured to receive a hardware description language representation of at least a part of a circuit and generate a second layout representation of the part of the circuit having a plurality of polygons. The EDA tool has a matching module that identifies and outputs an indication of whether one or more of the plurality of portions matches a subset of the plurality of polygons.

Recognition of template patterns with mask information

A received layout identifies a plurality of circuit components to be included in an integrated circuit (IC) layer for double patterning the layer using two photomasks, the layout including a plurality of first patterns to be included in the first photomask and at least one second pattern to be included in the second photomask. A selected one of the first patterns has first and second endpoints, to be replaced by a replacement pattern connecting the first endpoint to a third endpoint. At least one respective keep-out region is provided adjacent to each respective remaining first pattern except for the selected first pattern. Data are generated representing the replacement pattern, such that no part of the replacement pattern is formed in any of the keep-out regions. Data representing the remaining first patterns and the replacement pattern are output.

Method and system for replacing a pattern in a layout

A method of making a semiconductor device includes arranging a first cell and a second cell, determining, by a processor, a first pattern density of a first cell, determining a second pattern density of a second cell, determining a pattern density gradient from the first pattern density to the second pattern density, determining whether the pattern density gradient exceeds a pattern density gradient threshold, and indicating a design change if the pattern density gradient exceeds than the pattern density gradient threshold.

Method of making semiconductor device and a control system for performing the same

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Chung Li, Taiwan

Chung-Min Fu