Northeastern University

Silicon Genesis Corporation

Neah Power Systems, Inc.

Other

Silicon General Corporation

Silison Genesis Corporation

Air Innovative Systems, Inc.

Chung M Chan

Paul K Chu

Jonathan Chan Mallari

Ryne C Allen

Leroy J Ohlsen

Keith Warner

Aaron M Cooke

George B Cvijanovich

Shu Qin

Craig Nelson

Gordon L Rice

George B Cyijanovich

Steven Meassick

Zhong-Yi Xia

Yaunzhong Zhou

Imad Husein

The present invention discloses porous fuel cell electrode structures, assemblies, and systems having one or more conformal metallic layers selectively deposited on one or more pore surfaces, as well as to various methods relating thereto. In one embodiment, the present invention is directed to an electrode structure adapted for use with a fuel cell system (e.g., a hydrogen or a direct hydrocarbon fuel cell system), wherein the electrode structure comprises a substrate or support structure having one or more discrete porous bulk matrix regions disposed across a top surface of the substrate. In this embodiment, each of the one or more discrete porous bulk matrix regions is defined by a plurality of acicular pores that extend through the substrate or support structure. The plurality of acicular pores define inner pore surfaces, and the inner pore surfaces have a conformal electrically conductive layer thereon, as well as a plurality of catalyst particles.

Porous fuel cell electrode structures having conformal electrically conductive layers thereon

Hydrodynamic transport and flow channel passage structures associated with fuel cell electrode structures and fuel cell electrode stack assemblies, as well as to methods relating thereto, are disclosed. More specifically, the present invention is directed to a novel fluid delivery and removal channel passage structures integrally associated with electrode structures adapted for use within a fuel cell system. In one embodiment, the fluid delivery and removal channel passage structure comprises: a fluid delivery channel disposed across a first face of a silicon-based electrode structure; a fluid removal channel disposed across a second face of the silicon-based electrode structure (wherein the second face opposes the first face); and a porous bulk matrix fluid transport layer interposed between the fluid delivery channel and the fluid removal channel, wherein the porous bulk matrix fluid transport layer is adapted to hydrodynamically flow a gas or liquid therethrough, and wherein the porous bulk matrix fluid transport layer is in fluid communication with the fluid delivery and the fluid removal channels.

Hydrodynamic transport and flow channel passageways associated with fuel cell electrode structures and fuel cell electrode stack assemblies

The present invention is directed to silicon electrode structures and silicon electrode assemblies associated with fuel cell systems, as well as to methods relating thereto. In one embodiment, the present invention is directed to an electrode structure adapted for use with a fuel cell system such as, for example, a direct methanol fuel cell system. In this embodiment, the invention may be characterized in that the electrode structure comprises a silicon substrate having one or more selectively doped regions thereon, wherein each of the one or more selectively doped regions is adapted to function as a current collector for the transmission of an electrical current. In another embodiment, the electrode structure comprises a silicon substrate having one or more discrete porous bulk matrix regions disposed across a top surface, wherein each of the one or more discrete bulk matrix porous regions is defined by a plurality pores that extend into the silicon substrate, wherein the plurality of pores defines inner pore surfaces, and wherein the inner pores surfaces have catalyst particles uniformly dispersed thereon.

Silicon-based fuel cell electrode structures and fuel cell electrode stack assemblies

Metallic blocking layers integrally associated with fuel cell electrode structures and fuel cell electrode stack assemblies, as well as to methods relating thereto, are disclosed herein. More specifically, the present invention is directed to a metallic blocking layer integrally associated with an electrode structure of a fuel cell system such as, for example, a direct methanol fuel cell system. In this embodiment, the invention may be characterized in that the electrode structure comprises an inorganic (i.e., noncarbonaceous) support substrate having one or more discrete porous regions, wherein the one or more discrete porous regions is defined by an array of acicular pores disposed across the top surface area of the electrode structure such that at least a portion of the blocking layer covers the top surface area and protrudes into the array of acicular pores. The blocking layer is preferably a substantially voidless metallic membrane that is substantially impermeable to at least methanol and is substantially permeable to hydrogen atoms.

Metallic blocking layers integrally associated with fuel cell electrode structures and fuel cell electrode stack assemblies

Fuels cells, electrode assemblies, and electrodes that comprise silicon and/or sol-gel derived support structures, as well as to methods relating thereto, are disclosed herein. In one embodiment, the invention is directed to an electrode assembly adapted for use with a fuel cell comprises: an anode derived from a first planar silicon substrate; an electrolyte; a cathode derived from a second planar silicon substrate; wherein the anode and the cathode are parallel to each other and separated by an interstitial region comprising the electrolyte. In another embodiment, the invention is directed to electrode adapted for use with a fuel cell, wherein the electrode comprises a silicon substrate that functions as a current conductor, wherein the silicon substrate has a plurality of pores that define pore surfaces, wherein at least a portion of the pore surfaces have a catalyst thereon, wherein the catalyst is derived from one or more metallic precursors chemisorbed onto at least the pore surfaces.

Fuel cells having silicon substrates and/or sol-gel derived support structures

A plasma system for processing large area substrates. In one embodiment the system includes a plurality of radiofrequency (rf) plasma sources removably attached to the rf transparent windows of a processing chamber. The number and distribution of sources is varied to provide the size and uniformity of the plasma field required to treat the substrate. A plurality of plasma probes, such as Langmuir probes, Faraday cups and optical sensor are positioned within the chamber and in electrical communication with the plasma sources adjust the rf field produced by the individual sources to maintain the desired degree of field uniformity.

System for the plasma treatment of large area substrates

A method for implanting a substrate face using a plasma processing apparatus ( ). The method includes providing a substrate (e.g., wafer, panel) ( ) on a face of a susceptor. The substrate has an exposed face, which has a substrate diameter that extends from a first edge of the substrate to a second edge of the substrate across a length of the substrate. The method also includes forming a plasma sheath ( ) around the face of the substrate. The plasma sheath has a dark space distance &ldquo;D&rdquo; that extends in a normal manner from the exposed face to an edge of the plasma sheath. The dark space distance and the substrate diameter comprise a ratio between the dark space distance and the substrate diameter. The ratio is about one half and less, which provides a substantially uniform implant.

Method for non mass selected ion implant profile control

A cluster tool for providing plasma treatment to a substrate includes a plurality of chambers to provide plasma treatment to the substrate. At least one of the chambers performs ion implantation to the substrate. A dielectric window is provided on a surface of the chamber which performs ion implantation to the substrate. A plasma source is provided external to the chamber which performs ion implantation to the substrate. The plasma source is at a distance proximate enough to provide a plasma within the chamber.

A method for implanting a substrate face using a plasma processing apparatus (,). The method includes providing a substrate (e.g., wafer, panel) (,) on a face of a susceptor. The substrate has an exposed face, which has a substrate diameter that extends from a first edge of the substrate to a second edge of the substrate across a length of the substrate. The method also includes forming a plasma sheath (,) around the face of the substrate. The plasma sheath has a dark space distance &ldquo;D&rdquo; that extends in a normal manner from the exposed face to an edge of the plasma sheath. The dark space distance and the substrate diameter comprise a ratio between the dark space distance and the substrate diameter. The ratio is about one half and less, which provides a substantially uniform implant.

A plasma treatment system (,) for implantation with a novel susceptor with a perforated shield (,) and collection devices (,). The system (,) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (,) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (,) draws ions from the implantation toward and through the shield to improve implant uniformity in the substrate. The collection device accumulates charge that can detrimentally influence the substrate during processing. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (,) on a surface of the chamber. The system (,) also has an rf generator (,) and at least two rf sources in other embodiments.

Collection devices for plasma immersion ion implantation

A plasma treatment system (,) for implantation with a novel susceptor with a cotoured underlying surface (,). The system (,) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (,) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The contoured underlying surface deflects impinging ions in a direction away from the substrate surface, thereby reducing a possibility of particulate contamination on the substrate. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (,) on a surface of the chamber. The system (,) also has an rf generator (,) and at least two rf sources in other embodiments.

Contoured platen design for plasma immerson ion implantation

A plasma treatment system (,) for implantation with a novel susceptor with a silicon coating (,). The system (,) has a variety of elements such as a chamber, which can have a silicon coating formed thereon, in which a plasma is generated in the chamber. The system (,) also has a susceptor disposed in the chamber to support a silicon substrate. The silicon coating reduces non-silicon impurities that may attach to the silicon substrate. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (,) on a surface of the chamber. The system (,) also has an rf generator (,) and at least two rf sources in other embodiments.

Coated platen design for plasma immersion ion implantation

A plasma treatment system (,) for implantation with a novel susceptor with shielding (,). The system (,) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (,) also has a susceptor disposed in the chamber to support a substrate. A shield (,) is disposed adjacent to the susceptor for blocking impurities that may possibly be introduced from a backside of the susceptor. The shield allows fewer impurities to be sputtered from the backside of the susceptor. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (,) on a surface of the chamber. The system (,) also has an rf generator (,) and at least two rf sources in other embodiments.

Shielded platen design for plasma immersion ion implantation

A plasma treatment system (200) for implantation with a novel susceptor with a silicon coating (203). The system (200) has a variety of elements such as a chamber, which can have a silicon coating formed thereon, in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate. The silicon coating reduces non-silicon impurities that may attach to the silicon substrate. The system (200) also includes a silicon liner, which is used to line inner portions of the chamber walls.

Removable liner design for plasma immersion ion implantation

A plasma treatment system (200) for implantation with a novel susceptor with a perforated shield (201). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (201) draws ions from the implantation toward and through the shield to improve implant uniformity in the substrate. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.

Growing community of inventors

Bellevue, WA, United States of America

Chung M Chan