Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Liang Cheng

Ziwei Fang

Yen-Yu Chen

Huang-Lin Chao

Hsiang-Pi Chang

I-Ming Chang

Wei Zhang

Yao-Sheng Huang

Chun-I Wu

Chang-Sheng Lee

Wei-Jen Chen

Chyi-Tsong Ni

Ming-Hsien Lin

Yu-Ting Tsai

Yu-Wei Lu

Pinyen Lin

Tzer-Min Shen

Yen-Tien Tung

Hsueh-Wen Tsau

Kuo-Cheng Lee

Weng Chang

Sheng-Chau Chen

Chin-Szu Lee

Hung-Chang Sun

Chun-Chih Lin

Cheng-Yi Wu

Fang-Wei Lee

Shih Wei Bih

Li-Hsuan Chu

Alan Tu

Ethan Hsiao

Hong-Ming Lo

C W Chiu

Ching-Chia Wu

Chih-Wei Hsieh

Sheng-Yung Lo

Sz-Yuan Hung

Hui-Lin Sung

Hong-Ying Lin

Chia-Shiung Tsai

Jung-Hung Chang

Hsien-Ming Lee

Yeong-Jyh Lin

Chih-Cheng Lin

Peng-Soon Lim

Kuan-Liang Liu

Ying-Hsun Chen

Ping-Hao Lin

Tzo-Hung Luo

Chien-Hao Tseng

Po-Chin Kuo

Yu-Chia Liang

I-ming Chang

Dawei Heh

Li-Wen Huang

Yu-Lin Liu

Kuan-Lun Cheng

Chi On Chui

Lin-Yu Huang

Chun-Hao Chou

Li-Zhen Yu

Hsin-Yi Lee

Pang-Yen Tsai

Sheng-Tsung Wang

Chansyun David Yang

Chia-Yu Wei

Hsueh Wen Tsau

Ding-Kang Shih

Wei Ju Lee

Ke-Wei Su

Yu-Cheng Shen

Ming-Hsien Yang

Kun-Yu Lee

Wen-Chung Liu

Duen-Huei Hou

Chia-Hsi Wang

Sheng-Wei Yeh

Kenichi Sano

De-Yang Chiou

Wen-Cheng Cheng

Che-Hung Liu

Shen-Yang Lee

Pei-Wen Liu

Ching-Jing Wu

Kuanliang Liu

Chun-Chun Lin

A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The semiconductor device includes a first gate structure and a second gate structure. The first gate structure includes a first interfacial oxide (IO) layer, a first high-K (HK) dielectric layer disposed on the first interfacial oxide layer, and a first dipole layer disposed at an interface between the first IL layer and the first HK dielectric layer. The HK dielectric layer includes a rare-earth metal dopant or an alkali metal dopant. The second gate structure includes a second IL layer, a second HK dielectric layer disposed on the second IL layer, and a second dipole layer disposed at an interface between the second IL layer and the second HK dielectric layer. The second HK dielectric layer includes a transition metal dopant and the rare-earth metal dopant or the alkali metal dopant.

Gate structures in semiconductor devices

A stacked CMOS image sensor (CIS) structure is provided. The stacked CIS structure comprises a first die, a second die and a third die. The first die comprises a photodiode, a transfer gate, a selective conversion gain (SCG) switch, a reset switch, a floating node diffusion capacitor and a SCG diffusion capacitor. The second die comprises a source follower transistor and a row select switch. The third die comprises an image sensing circuit electrically connected to the third floating node.

Multi-wafer stacked CMOS image sensor structure

A semiconductor device includes a substrate, an interfacial layer formed on the semiconductor substrate, and a high-k dielectric layer formed on the interfacial layer. At least one of the high-k dielectric layer and the interfacial layer is doped with: a first dopant species, a second dopant species, and a third dopant species. The first dopant species and the second dopant species form a plurality of first dipole elements having a first polarity. The third dopant species forms a plurality of second dipole elements having a second polarity. A first concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the p-type transistor is different from a second concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the n-type transistor.

Dipoles in semiconductor devices

A method of fabricating a semiconductor device includes forming first and second nanostructured layers arranged in an alternating configuration on a substrate, forming first and second nanostructured channel regions in the first nanostructured layers, forming first and second gate-all-around structures wrapped around each of the first and second nanostructured channel regions. The forming the GAA structures includes depositing first and second gate barrier layers having similar material compositions and work function values on the first and second gate dielectric layers, forming first and second diffusion barrier layers on the first and second gate barrier layers, and doping the first and second gate barrier layers from a dopant source layer through the first and second diffusion barrier layers. The first diffusion barrier layer is thicker than the second diffusion barrier layer and the doped first and second gate barrier layers have work function values and doping concentrations different from each other.

Metal gate structures of semiconductor devices

A semiconductor device includes a substrate, an interconnect, a second transistor, and a sensing film. The substrate includes devices disposed therein. The interconnect is disposed on the substrate and electrically coupled to the devices, where the interconnect includes a plurality of build-up layers and a through hole formed therein. The first transistor is disposed in the interconnect and vertically extends through at least one of the plurality of build-up layers, and the first transistor is electrically coupled to a first device of the devices through the interconnect. The second transistor is disposed in the interconnect and vertically extends through the at least one of the plurality of build-up layers, and the second transistor is electrically coupled to a second device of the devices through the interconnect, where the first transistor and the second transistor are laterally separated from one another through the through hole. The sensing film is disposed on the interconnect and further extends into the through hole, where the sensing layer is laterally disposed between the first transistor and the second transistor.

Semiconductor device and manufacturing method thereof

A strain-relaxed silicon/silicon germanium (Si/SiGe) bi-layer can be used as a foundation for constructing strained channel transistors in the form of nanosheet gate all-around field effect transistors (GAAFETs). The bi-layer can be formed using a modified silicon-on-insulator process. A superlattice can then be epitaxially grown on the bi-layer to provide either compressively strained SiGe channels for a p-type metal oxide semiconductor (PMOS) device, or tensile-strained silicon channels for an n-type metal oxide semiconductor (NMOS) device. Composition and strain of the bi-layer can influence performance of the strained channel devices.

Strained nanosheets on silicon-on-insulator substrate

In fabrication of a phase change random access memory (PCRAM), a field effect transistor (FET) logic layer is formed on a first wafer, including a heating FET for each storage cell. The FET logic layer is transferred from the first wafer to a carrier wafer. Thereafter, a storage layer of the PCRAM is formed on the exposed surface of the FET logic layer, including a region of a phase change material for each storage cell that is electrically connected to a channel of the heating FET of the storage cell. The storage layer further includes a second heating transistor for each storage cell that is electrically connected to a channel of the second heating transistor.

Embedded double side heating phase change random access memory (PCRAM) device and method of making same

A semiconductor device includes a channel layer, an interfacial layer, a gate dielectric layer, a gate electrode, dipole elements, and additional elements. The interfacial layer is disposed on the channel layer, and includes an insulating material. The gate dielectric layer is disposed over the interfacial layer such that the channel layer is separated from the gate dielectric layer by the interfacial layer. The gate electrode is disposed on the gate dielectric layer. The dipole elements are present in at least one of the interfacial layer and the gate dielectric layer in a predetermined amount such that the semiconductor device has a predetermined threshold voltage. The additional elements are located at a region where the dipole elements are present so as to reduce interfacial defects caused by the dipole elements. The additional elements are different from the dipole elements. Methods for manufacturing the semiconductor device are also disclosed.

Semiconductor device with tunable threshold voltage and method for manufacturing the same

A semiconductor device with different gate structure configurations and a method of fabricating the same are disclosed. The semiconductor device includes first and second pair of source/drain regions disposed on a substrate, first and second nanostructured channel regions, and first and second gate structures with effective work function values different from each other. The first and second gate structures include first and second high-K gate dielectric layers, first and second barrier metal layers with thicknesses different from each, first and second work function metal (WFM) oxide layers with thicknesses substantially equal to each other disposed on the first and second barrier metal layers, respectively, a first dipole layer disposed between the first WFM oxide layer and the first barrier metal layer, and a second dipole layer disposed between the second WFM oxide layer and the second barrier metal layer.

Gate structures for semiconductor devices

A method is provided for forming a contact plug by bottom-up metal growth. In one step, a substrate is etched to form a contact hole that exposes a silicon-containing feature in the substrate. In one step, a silicide layer is formed on the silicon-containing feature. In one step, a metal seed layer is formed over the silicide layer. In one step, a metal contact layer is deposited over the metal seed layer to form the contact plug in the contact hole.

Method for forming a contact plug by bottom-up metal growth

A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming an interfacial oxide layer on the fin structure, forming a first dielectric layer over the interfacial oxide layer, forming a dipole layer between the interfacial oxide layer and the first dielectric layer, forming a second dielectric layer on the first dielectric layer, forming a work function metal (WFM) layer on the second dielectric layer, and forming a gate metal fill layer on the WFM layer. The dipole layer includes ions of first and second metals that are different from each other. The first and second metals have electronegativity values greater than an electronegativity value of a metal or a semiconductor of the first dielectric layer.

A resistive random access memory cell includes a gate all around transistor and a resistor device. The resistor device includes a first electrode including a plurality of conductive nanosheets. The resistor device includes a high-K resistive element surrounds the conductive nanosheets. The resistor device includes a second electrode separated from the conductive nanosheets by the resistive element.

RRAM device structure and manufacturing method

A semiconductor structure is provided. The semiconductor structure includes an epitaxial structure over a semiconductor substrate. The semiconductor structure also includes a conductive feature over the semiconductor substrate. The conductive feature includes a high-k dielectric layer and a metal layer on the high-k dielectric layer, and a top surface of the metal layer is below a top surface of the high-k dielectric layer. The semiconductor structure further includes a metal-semiconductor compound layer formed on the epitaxial structure. In addition, the semiconductor structure includes a first metal contact structure formed on the top surface of the metal layer of the conductive feature. The semiconductor structure further includes a second metal contact structure formed on the metal-semiconductor compound layer.

Semiconductor structure having metal contact features

A semiconductor structure includes a first fin structure and a second fin structure, a first dielectric layer disposed over the first fin structure, a second dielectric layer disposed over the second fin structure, a first gate electrode disposed over the first dielectric layer, and a second gate electrode disposed over the second dielectric layer. A thickness of the first dielectric layer and a thickness of the second dielectric layer are equal. The second fin structure includes an outer region and an inner region, and a Ge concentration in the outer portion is less than Ge concentration in the inner portion.

Semiconductor structure

A semiconductor device includes a first cobalt-containing plug disposed over a substrate, a second cobalt-containing plug disposed over the first cobalt-containing plug, a first barrier layer over sidewalls of the second cobalt-containing plug, a second barrier layer over sidewalls of the first barrier layer, and a dielectric layer surrounding the second barrier layer. The first barrier layer contains a metal element. The first and second barrier layers include different material compositions.

Dual metal via for contact resistance reduction

Growing community of inventors

Changhua County, Taiwan

Chung-Liang Cheng