Samsung Electronics Co., Ltd.

Yujin Instec. Co., Ltd.

Chung-Ki Lee

Jong-Hyoung Lim

Hyung-Shin Kwon

Chang-Soo Lee

Hong-Sun Hwang

Hyong-Yong Lee

A method of testing a semiconductor memory device is provided. Data is written to a plurality of memory cells disposed in a memory cell block of the semiconductor memory device. A first driving voltage is applied to a first group of word lines. A second driving voltage is applied to a second group of word lines. Each word line of the first group of the word lines is interposed between two neighboring word lines of the second group of the word lines. The first driving voltage has a voltage level different from that of the second driving voltage. The data is read from first memory cells coupled to the first group to determine whether each of the first memory cells is defective.

Semiconductor memory device, method of testing the same and method of operating the same

A multiple well bias memory device that includes a semiconductor substrate; a first well of a first conductivity type formed in the semiconductor substrate and having a memory cell formed therein; and a second well of the first conductivity type formed in the semiconductor substrate and having formed therein a sense amplifier configured to sense and amplify data from the memory cell. The first and second wells have different doping concentrations and are biased to first and second voltages, respectively. The first voltage being lower than the second voltage.

Multiple well bias memory

A semiconductor memory device and a control signal generating method thereof. The semiconductor memory device may include a voltage range detector configured to generate a voltage detecting signal corresponding to a range of a level of an external power voltage. A control signal generating portion may be used to generate a control signal corresponding to the range of the level of the external power voltage responsive to the voltage detecting signal. As a result, the semiconductor memory device can perform an operation for satisfying an access time characteristic according to a specification responsive to the control signal.

Growing community of inventors

Seoul, South Korea

Chung-Ki Lee