Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Jen Huang

Tsung-Yu Yang

Yun-Chi Wu

Cheng-Bo Shu

Jing-Ru Lin

Jui-Yu Pan

Yueh-Chieh Chu

Wen-Tuo Huang

Wei-Cheng Wu

Harry-Hak-Lay Chuang

Josh Lin

Yu-Wen Tseng

Chia-Sheng Lin

Ping-Tzu Chen

Wei Cheng Wu

Kuo-Ming Wu

Sheng-Chau Chen

Wei Chuang Wu

Shih Kuang Yang

Hau-Yi Hsiao

Ya-Chi Hung

Tsung-Hua Yang

Yung-Chun Tu

Hung-Yueh Chen

Shun-Kuan Lin

Chien Lin Liu

Yung Chun Tu

Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a first deep trench isolation (DTI) structure in a substrate. A dielectric structure is over the substrate. An interconnect structure is in the dielectric structure. The interconnect structure includes a lower interconnect structure and an upper interconnect structure that are electrically coupled together. The upper interconnect structure includes a plurality of conductive plates. The plurality of conductive plates are vertically stacked and electrically coupled together. A back-side through substrate via (BTSV) is in the substrate and the dielectric structure. The BTSV extends from a conductive feature of the lower interconnect structure through the dielectric structure and the substrate. The conductive feature of the lower interconnect structure is at least partially laterally within a perimeter of the DTI structure. The BTSV is within the perimeter of the DTI structure.

Testing structure for an integrated chip having a high-voltage device

Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes bonding a first semiconductor wafer to a second semiconductor wafer. A bond interface is disposed between the first and second semiconductor wafers. The first semiconductor wafer has a peripheral region laterally surrounding a central region. A support structure is formed between a first outer edge of the first semiconductor wafer and a second outer edge of the second semiconductor wafer. The support structure is disposed within the peripheral region. A thinning process is performed on the second semiconductor wafer.

Support structure to reinforce stacked semiconductor wafers

Various embodiments of the present disclosure are directed towards a shared frontside pad/bridge layout for a three-dimensional (3D) integrated circuit (IC), as well as the 3D IC and a method for forming the 3D IC. A second IC die underlies the first IC die, and a third IC die underlies the second IC die. A first-die backside pad, a second-die backside pad, and a third die backside pad are in a row extending in a dimension and overlie the first, second, and third IC dies. Further, the first-die, second-die, and third-die backside pads are electrically coupled respectively to individual semiconductor devices of the first, second, and third IC dies. The second and third IC dies include individual pad/bridge structures at top metal (TM) layers of corresponding interconnect structures. The pad/bridge structures share the shared frontside pad/bridge layout and provide lateral routing in the dimension for the aforementioned electrical coupling.

Shared pad/bridge layout for a 3D IC

A semiconductor arrangement includes a first dielectric feature passing through a semiconductive layer and a first dielectric layer over a substrate. The semiconductor arrangement includes a conductive feature passing through the semiconductive layer and the first dielectric layer and electrically coupled to the substrate. The conductive feature is adjacent the first dielectric feature and electrically isolated from the semiconductive layer by the first dielectric feature.

Semiconductor arrangement and method for making

Various embodiments of the present application are directed towards a method to integrate NVM devices with a logic or BCD device. In some embodiments, an isolation structure is formed in a semiconductor substrate. The isolation structure demarcates a memory region of the semiconductor substrate, and further demarcates a peripheral region of the semiconductor substrate. The peripheral region may, for example, correspond to BCD device or a logic device. A doped well is formed in the peripheral region. A dielectric seal layer is formed covering the memory and peripheral regions, and further covering the doped well. The dielectric seal layer is removed from the memory region, but not the peripheral region. A memory cell structure is formed on the memory region using a thermal oxidation process. The dielectric seal layer is removed from the peripheral region, and a peripheral device structure including a gate electrode is formed on the peripheral region.

Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology

Some embodiments relate to an integrated chip that includes a first source/drain region and a second source/drain region disposed in a substrate. A plane that is substantially perpendicular to an upper surface of the substrate traverses the first source/drain region and the second source/drain region. Agate electrode extends over a channel region in the substrate between the first source/drain region and the second source/drain region. The gate electrode is separated from the channel region by way of a charge trapping dielectric structure. The charge trapping dielectric structure includes a tunnel dielectric layer, a charge trapping dielectric layer over the tunnel dielectric layer, and a blocking dielectric layer over the charge trapping dielectric layer. The channel region has a channel width measured perpendicularly to the plane, and the tunnel dielectric layer has different thicknesses at different respective points along the channel width.

Integrated chip including a tunnel dielectric layer which has different thicknesses over a protrusion region of a substrate

A semiconductor feature includes: a semiconductor substrate; a dielectric structure and a semiconductor device disposed on the semiconductor substrate; an interconnecting structure disposed in the dielectric structure and connected to the semiconductor device; an STI structure disposed in the semiconductor substrate and surrounding the semiconductor device; two DTI structures penetrating the semiconductor substrate and the STI structure and surrounding the semiconductor device; a passivation structure connected to the semiconductor substrate and the DTI structures and located opposite to the interconnecting structure; and a conductive structure surrounded by the passivation structure, penetrating the semiconductor substrate and the STI structure into the dielectric structure, located between the DTI structures and electrically connected to the semiconductor device via the interconnecting structure.

Semiconductor feature and method for manufacturing the same

A semiconductor device includes a non-volatile memory (NVM) cell. The NVM cell includes a semiconductor wire disposed over an insulating layer disposed on a substrate. The NVM cell includes a select transistor and a control transistor. The select transistor includes a gate dielectric layer disposed around the semiconductor wire and a select gate electrode disposed on the gate dielectric layer. The control transistor includes a stacked dielectric layer disposed around the semiconductor wire and a control gate electrode disposed on the stacked dielectric layer. The stacked dielectric layer includes a charge trapping layer. The select gate electrode is disposed adjacent to the control gate electrode with the stacked dielectric layer interposed therebetween.

Semiconductor device

Embedded flash memory cell including a tunnel dielectric layer having different thicknesses over a memory region

Semiconductor device including non-volatile memory cells

A memory unit includes a substrate and a floating gate memory cell. The floating gate memory cell includes an erase gate structure disposed on the substrate, floating gate structures select gates, a common source and drains. The common source is disposed in the substrate, and the erase gate structure is disposed on the common source. The floating gate structures protrude from recesses of the substrate at two opposite sides of the erase gate structure. A method for controlling the memory unit includes applying an erase gate programming voltage on the erase gate structure, applying a control gate programming voltage on the common source, applying a bit line programming voltage on the drains, and applying word line programming voltage on the select gates, in which the control gate programming voltage is greater than the erase gate programming voltage.

Non-volatile memory device

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Tainan, Taiwan

Chung-Jen Huang