Dielectric Systems, Inc.

Quester Technology, Inc.

International Display Systems, Inc.

Canon U.s.a., Inc.

Chung J Lee

Atul Kumar

Giovanni Antonio Foggiato

Hui Wang

Chieh Chen

Joseph P Ellul

David T Ryan

Ming Xi Chan

Jeanne L Luce

Yuri Pikovsky

Iqbal A Shareef

David Leksell

George Tzeng

Stephen M Campbell

A method of encapsulating an organic light-emitting device is disclosed, wherein the device includes a light-emitting portion and an electrical contact portion, the method including forming a polymer layer over the light-emitting portion and the electrical contact portion of the device; forming a separation in the polymer layer between a portion of the polymer layer disposed over the light-emitting portion of the device and a portion of the polymer layer disposed over the electrical contact portion of the device; adhering a film removal structure to the portion of the polymer layer disposed over the electrical contact portion of the device; and removing the film removal structure, thereby causing the removal of the portion of the polymer layer disposed over the electrical contact portion of the device.

Method of encapsulating an organic light-emitting device

A method of forming an organic light emitting device on a substrate is provided, wherein the method includes forming an active device structure on the substrate, adhering a mask to the substrate, wherein the mask covers an electrical contact portion of the substrate while exposing the active device structure, forming an encapsulant layer over the active device structure and the mask, forming a separation between a portion of the encapsulant layer that covers the active device structure and a portion of the encapsulant layer that covers the mask, and removing the mask from the substrate.

Method of encapsulating an organic light emitting device

A method of forming a hybrid inorganic/organic dielectric layer on a substrate for use in an integrated circuit is provided, wherein the method includes forming a first dielectric layer on the substrate via chemical vapor deposition, and forming a second dielectric layer on the first dielectric layer via chemical vapor deposition, wherein one of the first dielectric layer and the second dielectric layer is formed from an organic dielectric material, and wherein the other of the first dielectric layer and the second dielectric layer is formed from an inorganic dielectric material.

Method for making hybrid dielectric film

A method of forming a protective barrier in an organic light emitting device is disclosed, wherein the organic light emitting device is formed on a substrate and includes a plurality of layers of materials, the plurality of layers of materials including an organic light emitting layer. The method includes forming an inorganic layer and a semi-crystalline parylene-based polymer layer over an underlying layer, wherein the semi-crystalline parylene-based polymer layer is formed via transport polymerization of a reactive intermediate species. Organic light emitting devices having barriers are also disclosed.

Organic light emitting device having a protective barrier

A system for depositing a composite polymer dielectric film on a substrate is disclosed, wherein the composite polymer dielectric film includes a low dielectric constant polymer layer disposed between a first silane-containing layer and a second silane-containing layer. The system includes a process module having a processing chamber and a monomer delivery system configured to admit a gas-phase monomer into the processing chamber for deposition of the low dielectric constant polymer layer, a post-treatment module for annealing the composite polymer dielectric film, and a silane delivery system configured to admit a vapor flow containing a silane precursor into at least one of the process module and the post-treatment module for the formation of the first silane-containing layer and the silane-containing layer.

System for forming composite polymer dielectric film

A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the dielectric thin film under at least one of a reductive atmosphere and a vacuum at a temperature above a reversible solid phase transition temperature of the dielectric film to convert the film from a lower temperature phase to a higher temperature phase, and cooling the dielectric thin film at a sufficient rate to a temperature below the solid phase transition temperature of the dielectric thin film to trap substantial portions of the film in the higher temperature phase.

Chemically and electrically stabilized polymer films

Methods and products of Transport co-polymerization ('TCP') that are useful for preparations of low Dielectric Constant ('&#x3b5;') thin films are disclosed. Transport co-polymerization (&#x201c;TCP&#x201d;) of reactive intermediates that are generated from a first precursor with a general structural formula (Z)&#x2014;Ar&#x2014;(CX'X&#x2033;Y)(VI) with a second reactive intermediate that is generated from a cage compound (e.g. Fullerenes, Methylsilsesquioxane, Hydrosilsesquioxane, and Adamantanyl) or a cyclic-compounds (e.g. Cyclo-Siloxanes and 2,2-Paracyclophanes) results in co-polymer films that are useful for making porous low &#x3b5; (&#x2266;2.0) thin films. The porous thin films of this invention consist of nano-pores with uniform pore distribution thus retain high rigidity thus are suitable for manufacturing of future ICs using copper as conductor. Preparation methods and stabilization processes for low k co-polymers that consist of spC&#x2014;Z and HC-spC&#x2014;X bonds are also revealed. A preparation method is achieved by controlling the substrate temperature and feed rate of the major precursors. One stabilization process includes a post annealing of as-deposited co-polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from &#x2212;20&#xb0; C. to &#x2212;50&#xb0; C. to +20&#xb0; C. to +50&#xb0; C. of their Reversible Crystal Transformation (&#x201c;CRT&#x201d;) temperatures, then quenching the resulting films to &#x2212;20&#xb0; C. to &#x2212;50&#xb0; C. below their &#x201c;CRT&#x201d; temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. &#x201c;Re-stabilization&#x201d; processes of co-polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

Porous low E (&#x3c;2.0) thin films by transport co-polymerization

A method of forming an electrically conductive element in an integrated circuit is disclosed. The method includes depositing a composite polymer dielectric film onto a silicon-containing substrate, wherein the composite polymer dielectric film includes a silane-containing adhesion promoter layer formed on the silicon-containing substrate, and a low dielectric constant polymer layer formed on the adhesion promoter layer, depositing a silane-containing hard mask layer onto the composite polymer dielectric film, exposing the adhesion promoter layer and the hard mask layer to a free radical-generating energy source to chemically bond the adhesion promoter layer to the underlying silicon-containing substrate and to the low dielectric constant polymer layer, and to chemically bond the composite polymer dielectric film to the hard mask layer, etching an etched feature in the hard mask layer and the composite polymer dielectric film, and depositing an electrically conductive material in the etched feature.

Single and dual damascene techniques utilizing composite polymer dielectric film

The present invention pertains to a processing method to produce a porous polymer film that consists of spC&#x2014;X and HC-spC&#x2014;X bonds (wherein, X&#x2550;H or F), and exhibits at least a crystal melting temperature, ('T'). The porous polymer films produced by this invention are useful for fabricating future integrated circuits ('IC's'). The method described herein is useful for preparing the porous polymer films by polymerizing reactive intermediates, formed from a first-precursor, with a low feed rate and at temperatures equal to or below a melting temperature of intermediate (T). Second-precursors that do not become reactive intermediates or have an incomplete conversion to reactive intermediates are also transported to a deposition chamber and become an inclusion of the deposited film. By utilizing a subsequent in-situ, post treatment process the inclusions in the deposited film can be removed to leave micro-pores in the resultant film. Annealing methods are used herein to stabilize the polymer films after reactive plasma etching. Furthermore, the present invention pertains to employment of reductive plasma conditions for patterning polymer films that consist of spC&#x2014;X and HC-spC&#x2014;X bonds (wherein, X&#x2550;H, F).

Porous low k(&#x3c;2.0) thin film derived from homo-transport-polymerization

New precursors and processes are disclosed for making fluorinated, low dielectric constant &#x2208; thin films that have higher dimensional stability and are more rigid than fluorinated poly (para-xylylenes). The fluorinated, low dielectric constant thin films can be prepared from reactions of an ethylenic-containing precursor with benzocyclobutane-, biphenyl- and/or dieneone-containing precursors. The fluorinated, low dielectric constant thin films are useful for fabrications of future &#x3c;0.13 &#x3bc;m integrated circuits (ICs). Using fluorinated, low-dielectric constant thin films prepared according to this invention, the integrity of the dielectric, copper (Cu) and barrier metals, such as Ta, can be kept intact; therefore improving the reliability of the IC.

Dielectric thin films from fluorinated precursors

An integrated circuit including a composite polymer dielectric layer formed on a substrate is disclosed, wherein the composite polymer dielectric layer includes a first silane-containing layer formed on the substrate, wherein the first silane-containing layer is formed at least partially from an organosilane material, a polymer dielectric layer formed on the first silane-containing layer, and a second silane-containing layer formed on the polymer dielectric layer. In some embodiments, the first silane-containing layer and second silane-containing layer may be formed from organosilane materials having at least one unsaturated bond capable of free radical polymerization. Systems and methods for making the disclosed integrated circuits are also provided.

Composite polymer dielectric film

Preparation methods and stabilization processes for low k polymers that consist of spC&#x2014;X and HC-spC&#x2014;X bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. One stabilization process includes a post annealing of as-deposited polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from &#x2212;20&#xb0; C. to &#x2212;50&#xb0; C. to +20&#xb0; C. to +50&#xb0; C. of their Reversible Crystal Transformation ('CRT') temperatures, then quenching the resulting films to &#x2212;20&#xb0; C. to &#x2212;50&#xb0; C. below their 'CRT' temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. &#x201c;Re-stabilization&#x201d; processes of polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

New precursors and processes to generate fluorinated poly(para-xylylenes) (&ldquo;PPX&rdquo;) and their chemically modified films suitable for fabrications of integrated circuits (&ldquo;ICs&rdquo;) of <0.15 &mgr;m are disclosed. The films so prepared have low dielectric constants (&ldquo;&isin;&rdquo;) and are able to keep the integrity of the dielectric, Cu, and the barrier metal, such as Ta. Hence, the reliability of ICs can be assured.

Integration of low &egr; thin films and Ta into Cu dual damascene

New precursors and processes are disclosed for making fluorinated, low dielectric constant &isin; thin films that have higher dimensional stability and are more rigid than fluorinated poly (para-xylylenes). The fluorinated, low dielectric constant thin films can be prepared from reactions of an ethylenic-containing precursor with benzocyclobutane-, biphenyl- and/or dieneone-containing precursors. The fluorinated, low dielectric constant thin films are useful for fabrications of future <0.13 &mgr;m integrated circuits (ICs). Using fluorinated, low-dielectric constant thin films prepared according to this invention, the integrity of the dielectric, copper (Cu) and barrier metals, such as Ta, can be kept intact; therefore improving the reliability of the IC.

Poly (para-xylylene) (&ldquo;PPX&rdquo;) polymer films are processed under particular conditions in order to maintain their stability for use in integrated circuits. This is primarily achieved by controlling the substrate temperature, feed rate of the polymer precursors, and the environmental conditions. The resulting films are stable at high temperatures and compatible with other film layers.

Growing community of inventors

Fremont, CA, United States of America

Chung J Lee