Samsung Electronics Co., Ltd.

Chung-Hwan Shin

Sang-Woo Lee

Sang-Bom Kang

Chul-Sung Kim

Dae-Yong Kim

Hyo-Seok Choi

Jeong-Ik Kim

Je-Hyung Ryu

Jeong-Nam Han

Sun-Jung Lee

Chan-Jin Park

Sung-woo Kang

Young-Mook Oh

A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.

Semiconductor devices with shaped portions of elevated source/drain regions

A semiconductor device includes an active fin formed to extend in a first direction, a gate formed on the active fin and extending in a second direction crossing the first direction, a source/drain formed on upper portions of the active fin and disposed at one side of the gate, an interlayer insulation layer covering the gate and the source/drain, a source/drain contact passing through the interlayer insulation layer to be connected to the source/drain and including a first contact region and a second contact region positioned between the source/drain and the first contact region, and a spacer layer formed between the first contact region and the interlayer insulation layer. A width of the second contact region in the first direction is greater than the sum of a width of the first contact region in the first direction and a width of the spacer layer in the first direction.

Fin-FET semiconductor device with a source/drain contact having varying different widths

Methods of forming semiconductor devices with metal silicide using pre-amorphization implants

Growing community of inventors

Seoul, South Korea

Chung-Hwan Shin