United Microelectronics Corp.

Tsinghua University

Chung-Hsuan Wu

Chien-Chong Hong

Nai-Ying Lo

Yung-Yu Yang

Chen-Hui Huang

Chia-Feng Hsiao

Kuan-Wen Chen

Shih-Pang Wang

Tzu-Ping Kao

Cheng-Hsien Chen

Wei-Han Wang

Yi-Hui Tseng

Shuo-Yu Chen

Chen-Hsuan Hung

En-Wei Tsui

A wafer backside defect detection method and a wafer backside defect detection apparatus are provided. The wafer backside defect detection method includes the following steps. A peripheral edge area of a wafer backside image that at least one notch is located is cropped off. Adjacent white pixels on the wafer backside image are connected to obtain a plurality of abnormal regions. If a total area of top N of the abnormal regions is more than 10% of an area of the wafer, it is deemed that the wafer has a roughness defect. N is a natural number. If the total area of the top N of the abnormal regions is less than 1% of the area of the wafer and a largest abnormal region of the abnormal regions is longer than a predetermined length, it is deemed that the wafer has a scratch defect.

Wafer backside defect detection method and wafer backside defect detection apparatus

An automatic detection method and an automatic detection system for detecting any crack on wafer edges are provided. The automatic detection method includes the following steps. Several wafer images of several wafers are obtained. The wafer images are integrated to create a templet image. Each of the wafer images is compared with the templet image to obtain a differential image. Each of the differential images is binarized. Each of the differential images which are binarized is de-noised. Whether each of the differential images has an edge crack is detected according to pattern of each of the differential images which are de-noised.

Automatic detection method and automatic detection system for detecting crack on wafer edges

A molybdenum disulfide sensor includes a flexible substrate, a patterned circuit layer and at least a molybdenum disulfide sheet. The flexible substrate has a gas flow channel. The patterned circuit layer is formed on the flexible substrate, and the patterned circuit layer includes a first electrode and a second electrode. The second electrode is faced toward the first electrode, and a gap is formed between the first electrode and the second electrode. The molybdenum disulfide sheet is located in the gap and is connected with the first electrode and the second electrode.

Molybdenum disulfide sensor and method for fabricating the same

A method of making a breath sensing tube includes: (A) dispersing a nanowire material in a solution in a dielectriphoretic bath, such that the nanowire material is formed into individual nanowires and nanowire aggregates; (B) adsorbing the nanowire aggregates on a bath electrode through dielectrophoresis so as to obtain a nanowire-containing solution containing the individual nanowires; contacting sensor electrodes of a substrate with the nanowire-containing solution; and subjecting the nanowire-containing solution to dielectrophoresis, so that one of the individual nanowires is adsorbed to the sensor electrodes to interconnect the sensor electrodes.

Method of making a breath sensing tube

Growing community of inventors

Tainan, Taiwan

Chung-Hsuan Wu