Industrial Technology Research Institute

United Microelectronics Corp.

United Integrated Circuit Corp.

Chung-Hsien Wu

Shing-Ren Sheu

Chih-Ming Huang

Yi-Lun Wen

Yuan-Chu Tai

Yi-Min Jen

Yu-Kai Wang

A positioning system for providing an environmental positioning information of a field using monocular vision is disclosed. The positioning system is configured to provide an environmental positioning information of a field having a plurality of virtual floors corresponding to different heights, wherein each of the virtual floors has a plurality of marking positions. The positioning system includes a computing device configured to generate an environmental positioning information according to a first environmental image. The environmental positioning information has a positioning accuracy having various levels corresponding to the marking positions of each of the virtual floors. The computing device is further configured to divide each of the virtual floors into a plurality of work zones according to the positioning accuracy corresponding to the making positions.

Positioning system and positioning method

An aerial vehicle including a body, a first ranging device, a second ranging device and a controller is provided. The first ranging device is disposed on the body and is configured to detect a first distance between the first ranging device and the reflector. The second ranging device is disposed on the body and is configured to detect a second distance between the second ranging device and the reflector. The controller is configured to obtain an included angle between a direction of the body and the reflector according to the first distance and the second distance.

Aerial vehicle and orientation detection method using same

A semiconductor read-only memory (ROM) and a method of fabricating the same are provided. The ROM device is structured in such a manner that allows the fabrication to include a fewer number of mask processes. This makes it more cost effective and allows a cycle time that is shorter than that of the prior art. Moreover, the particular structure of the ROM device makes punchthrough less likely to occur between any neighboring pairs of the buried bit lines when the ROM device is further scaled down. The ROM device is constructed on a semiconductor substrate which is partitioned into a peripheral region and a cell region. A plurality of STI structures are formed at predefined locations in both the peripheral region and the cell region. Immediately after this, a first ion-implantation process can be performed on the cell region to form a plurality of buried bit lines. Subsequently, the dielectric isolation layers in all of the STI structures in the cell region are removed, leaving a plurality of empty trenches behind. A conformal insulating layer and a conductive layer are then successively formed over the wafer, and the conductive layer is further selectively removed to form a word line in the cell region and a gate in the peripheral region. In the code implantation process, selected channel regions between the buried bit lines are doped with impurities for code implantation of data into the ROM device.

Semiconductor read-only memory device and method of fabricating the same

The present invention discloses a method of forming a contact window on a substrate. The method in the present invention includes a step of forming a gate structure on said substrate having a gate oxide, a gate electrode on the gate oxide, and a gate electrode protection layer on the gate electrode, a step of forming a protection layer conforming with the substrate and the gate structure, and a step of forming a first insulation layer over the protection layer. The method further includes removing a portion of the first insulation layer and a portion of the protection layer for forming side wall spacers at side walls of the gate structure, performing a ion implantation to the substrate using the gate structure and the side wall spacers as a mask, and then forming a second insulation layer on the substrate, the side wall spacers, and the gate structure. The method further includes patterning a photoresist layer on the second insulation layer to expose a portion of second insulation layer for making a connection. Finally, a portion of the second insulation layer is removed for forming a contact window.

Growing community of inventors

Hsinchu, Taiwan

Chung-Hsien Wu