Seoul Viosys Co., Ltd.

Seoul Semiconductor Co., Ltd.

Seoul Opto Device Co., Ltd.

Li-tec Gmbh

Other

Hyundai Motor Company

Kia Corporation

Industry-university Cooperation Foundation Hanyang University

Tews, Walter

Roth, Gundula

Chung Hoon Lee

Jong Hyeon Chae

Ho Joon Lee

Seong Gyu Jang

Walter Tews

Gundula Roth

Chang Yeon Kim

Dae Won Kim

So Ra Lee

Dae Sung Cho

Detlef Starick

James Stephen Speck

Dae Sung Kal

Jae Ho Lee

Ki Bum Nam

Sung Han Kim

Jong Min Jang

Yeo Jin Yoon

Daewoong Suh

Won Cheol Seo

Kyung Hee Ye

Hyuck Jung Choi

Jin Cheol Shin

Jong Kyu Kim

Sum Geun Lee

Min Woo Kang

Hyun A Kim

Won Young Roh

Joon Sup Lee

Do Hyung Kim

Motonobu Takeya

Eun Ju Kim

Hyuck Jun Kim

Jae Young Choi

Sung Jin Kim

Sun Woo Kim

Dae Woong Suh

Jong Rack Kim

Jong Ik Lee

Jae Hak Jeong

Seung Sik Hong

Sung Su Son

Dong Hoon Lee

Jung Hwa Jung

Bang Hyun Kim

Chae Hon Kim

Hong San Kim

Keon Young Lee

Jae Jo Kim

Lacroix Yves

Hyung Soo Yoon

Young Ju Lee

Sang Hyun Chang

Sang Ki Jin

Seon Min Bae

Stefan Tews

Si Ho Yu

Hoon Sik Eom

Sung Il Park

Jae Hee Lim

Ji Won Kim

Yong Min Song

Mi So Ko

Min Soo Jeong

Gwang Ryong Lee

Ji Hye Ahn

Jeong Wan Kang

Y O Cho

Young Hwan Son

Kwang Il Park

Hee Ho Bae

Seong Min Lee

Kyu Won Han

A Young Lee

Yeong Min Yoon

Sang Min Lee

Eun Jung Seo

Sung Ho Jin

Yong Hyun Baek

Ji Hun Kang

Seung Ryeol Ryu

Tae Kwang Kim

Yu Dae Han

Young Eun Yang

Do Choul Woo

Michael Lim

Chang Ik Im

Dae Hong Min

Eun Mi Choi

Min Hong Kim

Mi Hae Kim

Yoon Hee Kim

Hyouk Won Kwon

Hyuok Jung Choi

Chan Sung Jeong

Jung-Hwa Jung

Sung Ii Park

Woong Joon Hwang

Toshiya Yokogawa

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205≤X≤0.495 and 0.265≤Y≤0.450 in CIE color coordinates (X, Y).

Single chip multi band light emitting diode, light emitting device and light emitting module having the same

A light emitting device includes a short wavelength light emitting portion, a long wavelength light emitting portion, and a coupling layer combining the short wavelength emitting portion and the long wavelength light emitting portion. Each of the short wavelength light emitting portion and the long wavelength light emitting portion includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer of the long wavelength light emitting portion contains more Indium (In) than the active layer of the short wavelength light emitting portion, and the short wavelength light emitting portion emits light of a shorter wavelength than that of light emitted from the long wavelength light emitting portion.

Multi wavelength light emitting device and method of fabricating the same

A light module includes a support including a first region and a second region, a light source disposed on the support, and a reflector disposed on the support and covering at least a side of the light source. The reflector includes a first reflector disposed on the first region and a second reflector disposed on the second region. The first reflector includes a first slope extending along a longitudinal direction of the first region, and the second reflector includes a second slope extending along a longitudinal direction the second region. The second slope has a width that is longer than a width of the first slope.

Sterilization apparatus

A light emitting device including a protection layer including a first area and a second area having a greater thickness than the first area, a light emitting stacked structure including a plurality of semiconductor layers sequentially disposed one over another along a first direction on the first area of the protection layer, a plurality of via patterns electrically connected to the light emitting stacked structure and having a length along the first direction, and a plurality of pads electrically connected to the light emitting stacked structure through the via patterns, respectively, in which the second area of the protection layer does not overlap the light emitting stacked structure, and at least portion of the pads overlaps the second area of the protection layer and one of the via patterns.

Display apparatus

A light emitting device for a display including a transparent member laterally extending in a first direction and having a first region and a second region surrounding the first region, first to third light emission regions disposed on the transparent member, a support substrate, first to fourth electrode pads disposed between the transparent member and the support substrate, and vias electrically connecting the electrode pads to the light emission regions, respectively, in which the fourth electrode pad is electrically connected to at least one of the vias, each light emission region is disposed in the first region and does not overlap the second region in a second direction, and the fourth electrode pad overlaps one of the vias and one of the light emission regions in the second direction, and the one of the vias and the one of the light emission regions are separated from each other.

LED unit for display and display apparatus having the same

A light emitting diode pixel for a display including a first LED sub-unit, a second LED sub-unit disposed on a first portion of the first LED sub-unit, and a third LED sub-unit disposed on a second portion of the second LED sub-unit, in which each of the first, second, and third LED sub-units includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, light generated from the first LED sub-unit is configured to be emitted outside of the light emitting diode pixel through a third portion of the first LED sub-unit different from the first portion, and light generated from the second LED sub-unit is configured to be emitted outside of the light emitting diode pixel through a fourth portion of the second LED sub-unit different from the second portion.

Lighting emitting stacked structure and display device having the same

A display apparatus including a panel, a substrate disposed on the panel and having a first surface and a second surface opposing each other, a light shielding layer disposed on the second surface of the substrate, a plurality of nitride semiconductor layers directly disposed on the first surface of the substrate and defining a light emitting area, and a plurality of pads disposed on the nitride semiconductor layers, in which the light shielding layer has a thickness greater than a length of the longest wavelength among wavelengths of light generated from the light emitting area, and an upper surface of the light shielding layer has a concaved surface.

Light emitting device including light shielding layer

A light emitting module including a circuit substrate and light emitters arranged side by side thereon. A first light emitter can include a first layer stack, a second light emitter includes a second layer stack, and a third light emitter includes a third layer stack, and each stack can include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. A light transparent layer can be configured to transmit light emitter by the first, second, and third light emitters, and a reflector including a white material can be located adjacent to the first, second, and third light emitters. A stack direction in each of the first, the second and the third light emitters is not perpendicular to an upper surface of the light transparent layer.

Light emitting module

A lighting device including a first light emitter including a plurality of light sources each being configured to emit light with a different color temperature, a second light emitter including at least one light emitting structure to emit light having a different color range than that emitted from the first light emitter, a controller to adjust characteristics of light emitted from the first and second light emitters, a user interface member configured to receive input of a user and connected to the controller, and a storage medium connected to the controller, in which each of the light sources includes a light-emitting diode chip and a wavelength conversion member to convert a wavelength range of light emitted from the light-emitting diode chip, and the controller is further configured to control the first and second light emitters according to a spectrum of light stored in the storage medium.

Light-emitting apparatus including light-emitting diode

A display apparatus includes a display substrate, and light emitting devices arranged on an upper surface of the display substrate. At least one of the light emitting devices includes a first LED unit including a first light emitting stack, a second LED unit including a second light emitting stack, and a third LED unit including a third light emitting stack. Each of the first to third light emitting stacks includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. the first conductivity type semiconductor layer and the second conductivity type semiconductor layer in each of the first to third light emitting stacks are stacked in a horizontal direction with respect to the upper surface of the display substrate. At least one of the second conductivity type semiconductor layers in the first to third light emitting stacks is divided into two regions.

Light emitting device and LED display apparatus including the same

Disclosed herein are a sterilization module and a sterilization apparatus including the same. The sterilization module includes a support member and multiple germicidal light sources. The multiple germicidal light sources are mounted on the support member and emit germicidal light which is light having a wavelength capable of inactivating microorganisms. In addition, respective light exit surfaces of the multiple germicidal light sources face in different directions from one another. Further, an irradiance of the germicidal light delivered to a sterilization target is greater than a minimum irradiance required for sterilization.

Sterilization unit and sterilization apparatus including the same

A display device includes a plurality of pixel tiles spaced apart from each other, each of the pixel tiles including a substrate and a plurality of light emitting stacked structures disposed on the substrate, in which a distance between two adjacent light emitting stacked structures in the same pixel tile is substantially equal to a shortest distance between two adjacent light emitting stacked structures of different pixel tiles.

Display device having light emitting stacked structure

A light-emitting diode (LED) unit for a display including a plurality of pixels each including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first, second, and third light emitting cells including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell, a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell, in which the first, second, and third light emitting cells of each pixel share the first conductivity type semiconductor layer.

Light-emitting diode unit for display comprising plurality of pixels and display device having same

A light emitting diode pixel for a display includes a first subpixel including a first LED sub-unit, a second subpixel including a second LED sub-unit, a third subpixel including a third LED sub-unit, and a bonding layer overlapping the first, second, and third subpixels, in which each of the first, second, and third LED sub-units includes a first type of semiconductor layer and a second type of semiconductor layer, each of the first, second, and third LED sub-units is disposed on a different plane, and light generated from the second subpixel is configured to be emitted to an outside of the light emitting diode pixel by passing through a lesser number of LED sub-units than light generated from the first subpixel and emitted to the outside.

Light emitting device with LED stack for display and display apparatus having the same

A display apparatus including a plurality of pixel regions disposed on a support substrate, each of the pixel regions including a plurality of subpixel stacks including a first epitaxial stack, a second epitaxial stack, and a third epitaxial stack, in which light generated from the first epitaxial stack is to be emitted to the outside of the display apparatus through the second and third epitaxial stacks, light generated from the second epitaxial stack is to be emitted to the outside of the display apparatus through the third epitaxial stack, during operation, one of the subpixel stacks within each pixel region is configured to be selected and driven, and at least one subpixel stack further includes an electrode disposed between the first epitaxial stack and the support substrate to be in ohmic contact with the first epitaxial stack.

Growing community of inventors

Ansan-si, South Korea

Chung Hoon Lee