Mstar Semiconductor, Inc.

Chung-Ho Ning

Sterling Smith

A read state retention circuit and method are disclosed. The read state retention circuit comprises a charge storage unit, charging unit, sensing circuit and state indicator. The charging circuit is coupled to the charge storage unit for charging the charge storage unit. The sensing circuit is coupled to the charge storage unit for sensing a voltage level of the charge storage unit. The state indicator is coupled to the sensing circuit for outputting an indication signal in response to the voltage level.

Read state retention circuit and method

A method for operating a nonvolatile memory and related circuit are applied to a nonvolatile memory of an RFID tag. The operating method is for repeatedly performing a program procedure on the nonvolatile memory at least twice, and then performing an verification procedure on the nonvolatile memory.

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Hsinchu County, Taiwan

Chung-Ho Ning