Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-En Kao

You-Hua Chou

Ming-Chin Tsai

Victor Y Lu

Bo-Hung Lin

Wen-Cheng Yang

Chih-Tsung Lee

Ming-Chih Tsai

Shau-Lin Shue

Hai-Ching Chen

Ming-Han Lee

Hsin-Yen Huang

Hsiang-Huan Lee

Tung-Ching Tseng

Yu-Young Wang

Ming-Shiou Kuo

Chen-Chia Chiang

Chin-Hsiang Lin

Ming-Tsong Wang

Keith Kuang-Kuo Koai

Kuang-Hsing Liu

Wei Chin

Surendra Babu Anantharaman

Ta-Bin Chen

Shiu-Ko JangJian

Hung Jui Chang

Tien-Chen Hu

Chia-Ho Chen

Mao-Lin Kao

Huan-Wen Lai

Min-Te Lai

Kuang-Kuo Koai

Kuo-Fu Chien

Keith Koai

A cleaning device for removing contamination on a substrate holder used with an electroplating cell includes an arm, a cleaning agent supplier, a nozzle and a receiver. The cleaning agent supplier is coupled to the arm and configured to supply a cleaning agent. The nozzle is coupled to the cleaning agent supplier and configured to spray the cleaning agent onto the substrate holder to remove the contamination. The receiver is coupled to the arm and configured to receive the cleaning agent after the cleaning agent is sprayed onto the substrate holder.

Cleaning device for cleaning electroplating substrate holder

Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.

Magnetic structure for metal plating control

Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.

Ultra high vacuum cryogenic pumping apparatus with nanostructure material

A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.

PVD apparatus and method with deposition chamber having multiple targets and magnets

Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.

Method of manufacturing a semiconductor device

An apparatus comprises: a shower head having a supply plenum for supplying the gas to the chamber and a vacuum manifold fluidly coupled to the supply plenum; and at least one vacuum system fluidly coupled to the vacuum manifold of the shower head.

Shower head apparatus and method for controlling plasma or gas distribution

The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.

Shielding design for metal gap fill

In some embodiments, the present disclosure relates to a plasma processing system having a magnetron that provides a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron has a magnetic element that generates a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft that rotates the magnetic element about a center of the sputtering target. The elastic element may vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.

Rotation plus vibration magnet for magnetron sputtering apparatus

Semiconductor device metallization systems and methods

Growing community of inventors

Toufen, Taiwan

Chung-En Kao