Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Daw Young

Hung-Hsin Liu

Ming-Kuo Yu

How-Cheng Tsai

A method for a metal etchback process to form a metal filled semiconductor feature having improved planarity and electrical resistance including a semiconductor wafer having an etched opening lined with a refractory metal containing layer and a blanket deposited metal layer filling the etched opening; spin coating a spin on layer selected from the group consisting of an organic resinous layer and a spin-on glass layer over the metal layer; dry etching in a first etchback process to remove a first portion of the SOL layer to reveal a portion of the metal layer leaving a second portion of the SOL layer overlying the etched opening; dry etching in a second etchback process to remove the metal layer to reveal a portion of the refractory metal containing layer; and, removing the second portion of the SOL layer to form a substantially planar metal filled etched opening.

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Hsinchu, Taiwan

Chung-Daw Young