Industrial Technology Research Institute

Chung-Chih Wang

Chien-Chung Hung

Cha-Hsin Lin

Tzu-Kun Ku

Young-Shying Chen

Pei-Jer Tzeng

Chia-Pao Chang

The disclosure provides a TSV substrate structure and the stacked assembly of a plurality of the substrate structures, the TSV substrate structure including: a substrate comprising a first surface, a corresponding second surface, and a TSV communicating the first surface with the second surface through the substrate; and a conductor unit completely filling the TSV, the conductor unit comprising a conductor body which has a first and a second ends corresponding to the first and second surfaces of the substrate, respectively.

TSV substrate structure and the stacked assembly thereof

A data write in control circuit for magnetic random access memory is configured with a first transistor, a second transistor connected to the first transistor, a transmission gate connected to the first transistor, a comparator having two input terminal connected to the first transistor, a storage capacitor having one end connected to the first transistor and the other end connected to a power source or a ground, and a logic circuit having one end connected to the output terminal of the comparator and the other end receiving data to be written in.

Data write in control circuit for toggle magnetic random access memory

Growing community of inventors

Taipei County, Taiwan

Chung-Chih Wang