Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Chieh Yang

Yung-Chow Peng

Chih-Chiang Chang

Chung-Peng Hsieh

Chung-Ting Lu

Tai-Yi Chen

Nai Chen Cheng

Po-Nien Chen

Chia-Hsin Hu

Yu-Chiun Lin

Yi-Hsuan Chung

Yung-Shun Chen

Chih-chiang Chang

Yun-Ru Chen

Sa-Lly Liu

Wen-Shen Chou

Chin-Hua Wen

Mao-Hsuan Chou

Jinn-Yeh Chien

Kuan-Yu Lin

Tse-Hung Chen

Ching-Ting Lu

A device includes an electrical circuit. The device further includes a first conductive pillar over a first side of a substrate. The device further includes a first conductive rail electrically connected to the first conductive pillar, wherein the electrical circuit is electrically connected to the first conductive rail by the first conductive pillar. The device further includes a power pillar extending through the substrate, wherein the power pillar is electrically connected to the first conductive rail.

Power cell for semiconductor devices

A semiconductor device includes a metal-oxide-metal (MOM) cell including a first bus at a first elevation and extending along a first direction, and a second bus at a second elevation, extending along a second direction different from the first direction, and electrically connected to the first bus through a via. The MOM cell also includes a first group of fingers at the first elevation and extending along the first direction; and a second group of fingers at the second elevation and extending along the second direction. Each finger of the first group of fingers is electrically connected to the second bus through a corresponding via, each finger of the second group of fingers is electrically connected to the first bus through a corresponding via, and each finger of the first group of fingers overlaps each finger of the second group of fingers.

Metal-oxide-metal cell semiconductor device and method

A semiconductor device includes an active region over a substrate extending along a first lateral direction. The semiconductor device includes a number of first conductive structures operatively coupled to the active region. The first conductive structures extend along a second lateral direction. The semiconductor device includes a number of second conductive structures disposed above the plurality of first conductive structures. The second conductive structures extend along the first lateral direction. The semiconductor device includes a first capacitor having a first electrode and a second electrode. The first electrode includes one of the first conductive structures and the active region, and the second electrode includes a first one of the second conductive structures. Each of the active region and the first conductive structures is electrically coupled to a power rail structure configured to carry a supply voltage.

Middle end of line decoupling capacitors for semiconductor devices and methods of manufacturing thereof

An integrated circuit includes an array of metal conducting lines in a metal layer overlying an insulation layer supported by a substrate, a first metal segment lineup having multiple metal segments in the metal layer between a first metal conducting line and a second metal conducting line in the array of metal conducting lines, and an electric circuit having a first input and a second input. The first input is connected to the first metal conducting line and the second input is connected to the second metal conducting line, and a first length of the first metal conducting line is equal to a second length of the second metal conducting line.

Integrated circuits having signal lines formed with double patterning

An integrated circuit structure includes a first capacitor structure, disposed in a first layer on a semiconductor substrate and comprising a plurality of capacitors; a second capacitor structure, adjacent to first capacitor structure in the first layer, wherein the second capacitor structure and the first capacitor structure are arranged as a strip-shaped structure; a first conductive plate, disposed at one end of the strip-shaped structure in the first layer; and a second conductive plate, disposed in a second layer on the semiconductor substrate over the strip-shaped structure and extending toward the other end of the strip-shaped structure from the one end of the strip-shaped structure.

Integrated circuit structure of capacitive device

An electronic design flow generates an electronic architectural design layout for analog circuitry from a schematic diagram. The electronic design flow assigns analog circuits of the schematic diagram to various categories of analog circuits. The electronic design flow places various analog standard cells corresponding to these categories of analog circuits into analog placement sites assigned to the analog circuits. These analog standard cells have a uniform cell height which allows these analog standard cells to be readily connected or merged to digital standard cells which decreases the area of the electronic architectural design layout. This uniformity in height between these analog standard cells additionally provides a more reliable yield when compared to non-uniform analog standard cells.

Analog cells utilizing complementary mosfet pairs

Systems and methods are described herein for charge-based capacitor measurement. The system includes a first pseudo-inverter circuit and a second pseudo-inverter circuit. The system also includes a control circuit coupled between the first inverter circuit and the second inverter circuit. The control circuit is configured to generate independent and non-overlapping control signals for the first pseudo-inverter circuit and the second pseudo-inverter circuit. A shielding metal is coupled to the first pseudo-inverter circuit, the second pseudo-inverter circuit, and the control circuit. The shielding metal is configured to dissipate parasitic capacitance of at least one of the first pseudo-inverter circuit or the second pseudo-inverter circuit. A device under test is coupled to each of the first inverter circuit and the second inverter circuit.

Two-step charge-based capacitor measurement

A method is disclosed including: generating, based on design information for an integrated circuit, a circuit design that includes an initial power delivery network (PDN) for the integrated circuit; performing a pre-layout simulation to the circuit design that includes the initial power delivery network, to determine whether the circuit design meets a predetermined specification; generating a circuit layout of the integrated circuit when the circuit design meets the predetermined specification; modifying a pillar density of the initial power delivery network repeatedly when the circuit design does not meet the predetermined specification until the circuit design meets the predetermined specification to generate a circuit layout of the integrated circuit; and performing a post-layout simulation to the circuit layout.

Generation of layout including power delivery network

A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.

Semiconductor device and a method for fabricating the same

The present disclosure provides a circuitry. The circuitry includes a comparator and a signal correlated circuit. The comparator includes a first input terminal, a second input terminal, and an output terminal. The signal correlated circuit includes a first input terminal, a second input terminal, a first output terminal, and a second output terminal. The first input terminal is coupled to receive a first input signal. The second input terminal is coupled to receive a second input signal independent from the first input signal. The first output terminal is configured to generate a first output signal and to send the first output signal to the first input terminal of the comparator. The second output terminal is configured to generate a second output signal and to send the second output signal to the second input terminal of the comparator. The first output signal and the second output signal are correlated.

Circuitry and method for reducing environmental noise

A device includes an electrical circuit having a first set of circuit elements. The device further includes a first set of conductive pillars over a first side of a substrate. The device further includes a first conductive rail electrically connected to each of the first set of conductive pillars, wherein each of the first set of conductive pillars is electrically connected to each of the first set of circuit elements by the first conductive rail. The device further includes a first plurality of power pillars extending through the substrate, wherein each of the first plurality of power pillars is electrically connected to the first conductive rail.

Semiconductor devices including decoupling capacitors and methods of manufacturing thereof

A device includes a control circuit, a scope circuit, a first logic gate and a second logic gate. The control circuit is configured to generate a first control signal according to a voltage signal and a delayed signal. The scope circuit is configured to generate a first current signal in response to the first control signal and the voltage signal. The first logic gate is configured to perform a first logical operation on the voltage signal and one of the voltage signal and the delayed signal to generate a second control signal. The second logical gate configured to perform a second logical operation on the second control signal and a test control signal to generate a second current signal.

On-chip oscilloscope

A method is disclosed including: generating, based on design information for an integrated circuit, a circuit design that includes an initial power delivery network (PDN) for the integrated circuit; performing a pre-layout simulation to the circuit design that includes the initial power delivery network, to determine whether the circuit design meets a predetermined specification; generating a circuit layout of the integrated circuit when the circuit design meets the predetermined specification; and adding at least one additional conductive pillar or at least one additional power rail in the initial power delivery network according to a relationship of a pillar density of the initial power delivery network and a maximum pillar density when the circuit design does not meet the predetermined specification.

Capacitor structures with low capacitances are disclosed. In one example, a capacitor structure is disclosed. The capacitor structure includes a first electrode and a second electrode. The first electrode comprises a first metal finger. The second electrode comprises a second metal finger and a third metal finger that are parallel to each other and to the first metal finger. The first metal finger is formed between the second metal finger and the third metal finger. The capacitor structure further includes: a fourth metal finger formed as a dummy metal finger between the first metal finger and the second metal finger, and a fifth metal finger formed as a dummy metal finger between the first metal finger and the third metal finger. The fourth metal finger and the fifth metal finger are parallel to the first metal finger.

Growing community of inventors

Zhubei, Taiwan

Chung-Chieh Yang