Taiwan Semiconductor Manufacturing Comp. Ltd.

Compal Electronics, Inc.

Chung-Chieh Lee

Chi-Ming Yang

Chyi Shyuan Chern

Huan-Just Lin

Sheng-Liang Pan

Chia-Yang Hung

Guan-Xuan Chen

Po-Chuan Wang

Yung-Chang Hsu

Chun-Lin Louis Chang

Tsiao-Chen Wu

Feng Yuan Hsu

Hsiu-En Hsu

Jeng-Nan Lin

Chan-Ju Lin

Pa-I Chuang

Horng-Huei Tseng

Lin-Jung Wu

Yungtzu Chen

Jie-Ting Hsieh

Yi-Ting Lyu

Tsuan-Fang Lin

Yung-Tzu Chen

Yung Tzu Chen

Yu-Ting Chou

The present disclosure provides a method for forming a semiconductor structure, including dispensing a dehydrating chemical over a fin of a substrate, wherein the dehydrating chemical includes a first chemical, and a second chemical having a melting point greater than the melting point of the first chemical, and solidifying the dehydrating chemical.

Method for forming a semiconductor structure using dehydrating chemical, and method for forming a semiconductor structure

The present disclosure provides an etching solution, including an ionic strength enhancer having an ionic strength greater than 10M in the etching solution, wherein the ionic strength enhancer includes Li, Na, K, Mg, Ca, N(CH), or N(CH), a solvent, and an etchant.

Semiconductor structure etching solution and method for fabricating a semiconductor structure using the same etching solution

A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Fin field-effect transistor and method of forming the same

A method includes forming a gate structure on a semiconductor substrate; depositing a carbon-containing seal layer over the gate structure; depositing a nitrogen-containing seal layer over the carbon-containing seal layer; introducing an oxygen-containing precursor on the nitrogen-containing seal layer; heating the substrate to dissociate the oxygen-containing precursor into an oxygen radical to dope into the nitrogen-containing seal layer; after heating the substrate, etching the nitrogen-containing seal layer and the carbon-containing seal layer, such that a remainder of the nitrogen-containing seal layer and the carbon-containing seal layer remains on a sidewall of the gate structure as a gate spacer.

Semiconductor device and manufacturing method thereof

A storage device management method for a storage device is provided. The method includes periodically obtaining a current device temperature corresponding to the storage device via a temperature sensor of the storage device; accumulating a first count value in response to determining that the current device temperature is greater than a first temperature threshold; adjusting the first temperature threshold in response to determining that the first count value is greater than the first count threshold; accumulating a second count value in response to determining that the current device temperature is greater than a second temperature threshold; adjusting the second temperature threshold in response to determining that the second count value is greater than the second count threshold; and controlling the storage device to enter a target system state in response to determining that the current device temperature is not less than a critical temperature threshold.

Storage device and storage device management method

A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.

Apparatus and method for generating an electromagnetic radiation

In a method of cleaning a substrate, a solution including a size-modification material is applied on a substrate, on which particles to be removed are disposed. Size-modified particles having larger size than the particles are generated, from the particles and the size-modification material. The size-modified particles are removed from the substrate.

Method of manufacturing semiconductor device and method of cleaning substrate

The present disclosure provides a semiconductor structure etching solution, including an etchant, an ionic strength enhancer having an ionic strength greater than 10M in the semiconductor structure etching solution, and a solvent having a dielectric constant lower than a dielectric constant of water.

The present disclosure provides a dehydrating chemical for dehydrating a semiconductor substrate under an ambient temperature, including a first chemical having a melting point below the ambient temperature, and a second chemical having a melting point greater than the melting point of the first chemical, wherein the dehydrating chemical has a melting point less than the ambient temperature by predetermined &#x394;Tdegrees, and at least one of the first chemical and the second chemical has a saturated vapor pressure greater than a predetermined pressure Punder 1 atm.

The present disclosure provides a method for dehydrating a semiconductor structure, including providing a semiconductive substrate, forming a trench on the semiconductive substrate, dispensing an agent in liquid form into the trench, solidifying the agent, and dehydrating a surface in the trench by transforming the agent from solid form to vapor form.

Method for dehydrating semiconductor structure and dehydrating method of the same

A method for drying a wafer is provided. The method includes providing or receiving the wafer and applying a rinsing liquid in a liquid state to the wafer. The rinsing liquid has a boiling point. The method also includes drying the wafer by applying a drying fluid in a gaseous state to the wafer. The drying fluid has a higher temperature than the boiling point of the rinsing liquid, and the rinsing liquid is evaporated and removed by the drying fluid. After the removal of the rinsing liquid, the drying fluid remains in a gaseous state.

Method for drying wafer with gaseous fluid

A computer device and a data protection method therefor are provided. The computer device includes an embedded controller, a data storage, and a power module. The embedded controller includes a general-purpose input-output port. The data storage is coupled to the embedded controller through the general-purpose input-output port. The power module is coupled to the embedded controller. The embedded controller detects whether an abnormal shutdown event occurs. When the abnormal shutdown event occurs, the embedded controller informs the data storage to perform a buffered data storage operation through the general-purpose input-output port, so as to transfer buffered data in the data storage to a non-volatile storage area in the data storage, and the embedded controller controls the power module to maintain power supply to the data storage in a predetermined time period.

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Taipei, Taiwan

Chung-Chieh Lee