Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Chi Wen

Feng-Ching Chu

Yen-Ming Chen

Feng-Cheng Yang

Chia-Pin Lin

Wei-Yuan Lu

Wei-Yang Lee

Chih-Chiang Chang

Yen-Ting Chen

Chien-I Kuo

A method for fabricating a semiconductor device that includes a merged source/drain feature extending between two adjacent fin structures is provided. An air gap is formed under the merged source/drain feature. Forming the epitaxial feature includes growing a first epitaxial feature having a first portion over the first fin structure and a second portion over the second fin structure, growing a second epitaxial feature over the first and second portions of the first epitaxial feature, and growing a third epitaxial feature over the second epitaxial feature. The second epitaxial feature includes a merged portion between the first fin structure and the second fin structure.

Semiconductor device with phosphorus-doped epitaxial features

A method includes forming a semiconductor fin protruding from a substrate, forming a dummy gate structure across the semiconductor fin, recessing a portion of the semiconductor fin in a region adjacent the dummy gate structure to form a recess, growing a semiconductor layer in the recess, and forming a first dielectric layer interposing the semiconductor layer and the dummy gate structure. The semiconductor layer covers at least a portion of the first dielectric layer. The method also includes modifying a shape of the semiconductor layer to expose the portion of the first dielectric layer, depositing a second dielectric layer covering the semiconductor layer and the portion of the first dielectric layer, and replacing the dummy gate structure with a metal gate structure.

Epitaxial features in semiconductor devices and manufacturing method of the same

The present disclosure provides a semiconductor device and a method of forming the same. A semiconductor device according one embodiment of the present disclosure include a plurality of channel members disposed over a substrate, a plurality of inner spacer features interleaving the plurality of channel members, a gate structure wrapping around each of the plurality of channel members, and a source/drain feature. The source/drain feature includes a first epitaxial layer in contact with the substrate and the plurality of channel members, and a second epitaxial layer in contact with the first epitaxial layer and the plurality of inner spacer features. The first epitaxial layer and the second epitaxial layer include silicon germanium. A germanium content of the second epitaxial layer is greater than a germanium content of the first epitaxial layer.

Semiconductor device including source/drain feature with multiple epitaxial layers

A method for fabricating a semiconductor device that includes a merged source/drain feature extending between two adjacent fin structures. An air gap is formed under the merged source/drain feature. Forming the epitaxial feature includes growing a first epitaxial feature having a first portion over the first fin structure and a second portion over the second fin structure, growing a second epitaxial feature over the first and second portions of the first epitaxial feature, and growing a third epitaxial feature over the second epitaxial feature. The second epitaxial feature includes a merged portion between the first fin structure and the second fin structure.

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Hsinchu, Taiwan

Chung-Chi Wen