Taiwan Semiconductor Manufacturing Comp. Ltd.

Rafael Microelectronics, Inc.

Chung-Cheng Wang

Chun-Kuang Chen

Chia-Cheng Chao

Chi-Hua Fu

Tzu-Yun Wang

Kang-Ming Tien

A test wafer is placed inside a baking module and is baked. Via one or more temperature sensors, a cumulative heat amount delivered to the test wafer during the baking is measured. The measured cumulative heat amount is compared with a predefined cumulative heat amount threshold. In response to the comparing indicating that the measured cumulative heat amount is within the predefined cumulative heat amount threshold, it is determined that the baking module is qualified for actual semiconductor fabrication. In response to the comparing indicating that the measured cumulative heat amount is outside of the predefined cumulative heat amount threshold, it is determined that the baking module is not qualified for actual semiconductor fabrication.

Using cumulative heat amount data to qualify hot plate used for post-exposure baking

A method of maximizing power efficiency for a power amplifier system comprises obtaining a power supply voltage; determining a first voltage level sufficient for a power amplifier of the power amplifier system to output an output power; determining a second voltage level lower than the first voltage level; determining whether the power amplifier is activated, to generate a determination result; determining to convert the power supply voltage into a supply voltage with the first voltage level or the second voltage level according to the determination result; and supplying the power amplifier with the supply voltage.

Method of maximizing power efficiency for power amplifier system and power amplifier system thereof

Using cumulative heat amount data to qualify hot plate used for postexposure baking

A method for lithography patterning includes forming a first layer over a substrate, the first layer being radiation-sensitive, exposing the first layer to a radiation, mixing a first solution and a second solution, thereby forming a developer, and dispensing the developer to the exposed first layer to form a pattern over the substrate. The dispensing of the developer includes varying a concentration of a developing chemical in the developer in multiple stages, such that the concentration of the developing chemical in the developer increases from a first stage to a subsequent second stage, and increases from the second stage to a subsequent third stage real-time during the dispensing.

Lithography patterning with flexible solution adjustment

A system for lithography patterning includes a first supply pipe for supplying a first solution, a second supply pipe for supplying a second solution, and a third supply pipe coupled to the first and second supply pipes for receiving the first and second solutions respectively and mixing the first and second solutions into a mixture. The third supply pipe couples to the first and second supply pipe at a junction. At the junction the first solution in the first supply pipe flows in a direction opposite to that of the second solution in the second supply pipe. The system further includes a first control unit coupled to the first supply pipe and configured to control a flow rate of the first solution, and a second control unit coupled to the second supply pipe and configured to control a flow rate of the second solution.

A system for lithography patterning includes a first supply pipe for supplying a first solution; a second supply pipe for supplying a second solution; a third supply pipe coupled to the first and second supply pipes for receiving the first and second solutions respectively and mixing the first and second solutions into a mixture; a substrate stage for holding a substrate; a supply nozzle coupled to the third supply pipe for dispensing the mixture to the substrate; a first control unit coupled to the first supply pipe and configured to control a flow rate of the first solution going to the third supply pipe; and a second control unit coupled to the second supply pipe and configured to control a flow rate of the second solution going to the third supply pipe.

A method for lithography patterning includes forming a first layer over a substrate, the first layer being radiation-sensitive. The method further includes exposing the first layer to a radiation. The method further includes applying a developer to the exposed first layer, resulting in a pattern over the substrate, wherein the developer includes a developing chemical whose concentration in the developer is a function of time during the applying of the developer.

In a pattern forming method, a resist layer disposed on a wafer is exposed by an energy beam. A post-exposure-bake (PEB) is performed on the wafer with the exposed resist layer by using a PEB apparatus. After the PEB, the exposed resist layer is developed, thereby forming a resist pattern. The PEB apparatus includes a baking plate, and the wafer is placed on the baking plate for the PEB when a temperature of the wafer is within a predetermined temperature range.

Pattern forming method and apparatus for lithography

A dispensing head for dispensing a developer onto a substrate is provided. The dispensing head includes a housing configured to receive the developer. The dispensing head further includes at least one liquid outlet provided on the housing. The liquid outlet is configured to spray the developer onto an elongated area on the substrate. Also, the liquid outlet is configured to spray the developer along a dispensing direction that is tilted with respect to the normal direction of the substrate and perpendicular to the long-axis direction of the elongated area.

Apparatus and method for dispensing developer onto semiconductor substrate

The present disclosure provides a developing unit that includes a wafer stage designed to secure a semiconductor wafer; an exhaust mechanism configured around the wafer stage and designed to exhaust a fluid from the semiconductor wafer; and a multi-switch integrated with the exhaust mechanism and designed to control the exhaust mechanism at various open states.

Developing unit with multi-switch exhaust control for defect reduction

A system comprises: a filter for removing at least one of a contaminant or gas bubbles from a liquid photoresist to provide a filtered photoresist at an outlet of the filter. The filter has a filter vent. A trap has an inlet coupled to receive the filtered photoresist from the filter, for removing a remaining contaminant or gas bubbles from the filtered photoresist. One or more valves and one or more conduits are connected to the filter and the trap. The one or more valves are operable to reverse a direction of flow of the filtered photoresist, so that the photoresist flows from the inlet of the trap, through the outlet of the filter, to the filter vent.

System and method for dispensing photoresist

A method for pre-treating a wafer surface before applying a material thereon. The method includes positioning the wafer on a rotating apparatus. The wafer is rotated at a first rotational speed between about 50 revolutions per minute (rpm) and about 300 rpm and for a period of about 1 second to about 10 seconds while dispensing a cleaning solvent on the wafer surface. The wafer is rotated at a second rotational speed between about 500 rpm and about 1,500 rpm for a period of about 1 second to about 10 seconds. The wafer is then rotated at a third rotational speed between about 50 rpm and about 300 rpm for a period of about 1 second to about 5 seconds. With the wafer rotating at the third rotational speed, a solvent-containing material is thereafter deposited on the surface of the wafer.

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Hsinchu, Taiwan

Chung-Cheng Wang