Epistar Corporation

United Epitaxy Company, Inc.

Chung-Cheng Tu

Jin-Ywan Lin

Jen-Chau Wu

Tzu-Ying Yen

Han-Tsun Lai

Huan-Pin Huang

Pao-I Huang

A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a pattern including a light emitting area located on the light-emitting surface of the epitaxy structure. The first electrode is located on the substrate, and the isolation layer is located on the epitaxy structure adjacent to the first electrode. The contact layer is located on the first electrode, and the bonding layer is located on one portion of the isolation layer. The connection bridge with a width less than one half of the diameter of the light emitting area is located on the other portion of the isolation layer, thereby connecting the contact layer and the bonding layer.

Method of manufacturing a point source light-emitting diode

A light emitting diode and a method of the same are provided. The light emitting diode includes a light-emitting structure, a silicon substrate and a bonding layer. The light-emitting structure includes two semiconductor layers of different doped types. The light-emitting structure is capable of emitting light when a current passes through. The silicon substrate includes two zones of different doped types. The bonding layer is interposed between the light-emitting structure and the silicon substrate so that the semiconductor layer and the zone closest to the bonding layer are of different doped types.

Light emitting diode and method of the same

Point source light-emitting diode

A high luminance indium gallium aluminum nitride light emitting diode (LED) is disclosed, including a substrate, a first conductive type nitride layer, an active layer, a second conductive type nitride layer, a first contact layer, a second contact layer, and a conductive transparent layer. The first contact layer has a first bandgap and a first doping concentration, and is disposed on the second conductive type nitride layer. The second contact layer has a second bandgap and a second doping concentration, and is disposed on the first contact layer. The first doping concentration and the second doping concentration are respectively larger than a predetermined concentration, and the first bandgap is smaller than the second bandgap. The second contact layer is thinner than a predetermined thickness so that a tunneling effect occurs between the conductive transparent layer and the second contact layer while the LED is in operation.

High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof

A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and abutting each other but spaced by an isolation trench. The stack layers from a bottom thereof include a thermal conductive substrate, an nonconductive protective layer, a metal adhering layer, a mirror protective layer, a p-type ohmic contact epi-layer, a upper cladding layer, an active layer, and a lower cladding layer. Two p-type ohmic contact metal electrodes for two LEDs are formed on an interface between the mirror protective layer and the ohmic contact epi-layer and buried in the mirror protective layer. The stack layers have first trenches formed therein which exposes the upper cladding layer and electrical connecting channels to connect p-type electrodes. The isolation trench is formed by patterning the exposed upper cladding layer until further exposing the nonconductive protective layer. Two n-type electrodes are formed on the lower cladding layer of two LEDs. A dielectric layer is deposited to fill the isolation trench and covered a sidewall of the first trench so that it can electrically isolate layers of the stack layers of the second LED while a metal connection trace formed thereon to connect the p-type ohmic contact electrode of the first LED and n-type of ohmic electrode of second LED.

Series connection of two light emitting diodes through semiconductor manufacture process

A high reflective and conductive metal substrate instead of a GaAs substrate which is a light absorption substrate is utilized for the light emitting diode. The processes include forming a mirror protection film on the light emitting epi-layers. The mounting between the reflective and conductive metal substrate on the protection film is though a metal adhesive layer. Afterward, the temporal GaAs substrate is removed. Thereafter, a trench is formed to remove a portion of light emitting epi-layers to expose a p-type ohmic contact epi-layer and the first ohmic contact metal electrode of the light emitting epi-layers. Then the second ohmic contact metal electrode and a wire bonding layer formation are followed. The LED can enhance capability of the light reflect instead of light absorption.

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Taipei, Taiwan

Chung-Cheng Tu