Taiwan Semiconductor Manufacturing Comp. Ltd.

Trend Micro Inc.

Chung Chang Liu

Ruey-Yun Shiue

Yuan-Lung Liu

Chih-Ching Lin

Chih-Min Wen

Cheng-Shien Chen

Li-Der Chen

A computer system receives a file and instruments an original code of the file in memory. The resulting instrumented code allows for collection of runtime information of the original code. An unpacking routine that includes one or more instructions that execute several times, modify memory locations, and execute instructions in the modified memory locations is identified. The unpacking routine is deemed a malware signature and incorporated into a malware pattern. An unpacking behavior diagram can also be generated from the runtime information.

Automatic malware signature extraction from runtime information

A method is disclosed of forming a bonding pad that is immune to IMD cracking. A partially processes semiconductor wafer is provided having all metal levels completed. A blanket dielectric layer is formed over the uppermost metal level. Patterning and etching said dielectric layer horizontal and vertical arrays of trenches are formed passing through the dielectric layer and separating the dielectric layer into cells. The trenches are filled with a conducting material and, after performing CMP, bonding metal patterns are deposited. Wires are bonded onto said bonding metal patters, after which a passivation layer is formed.

Bonding pad structure to minimize IMD cracking

A method is disclosed of forming a bonding pad that is immune to IMD cracking. A partially processed semiconductor wafer is provided having all metal levels completed. A blank dielectric layer is formed over the uppermost metal level. Patterning and etching said dielectric layer horizontal and vertical arrays of trenches are formed passing through the dielectric layer and separating the dielectric layer into cells. The trenches are filled with a conducting material and, after performing CMP, bonding metal patterns are deposited. Wires are bonded onto said bonding metal patterns, after which a passivation layer is formed.

Mesh pad structure to eliminate IMD crack on pad

This invention relates to a method of fabricating metal wiring, whereby sputtered metal is rapidly cooled down by a post-metal quenching process, to prevent deleterious CuAl precipitation. The main embodiments are the formation of a TiN reactively sputtered bottom barrier layer, followed by a sputtered Al&mdash;Cu alloy wiring layer immediately followed by an in situ post-metal quench (key step), then followed by a reactively sputtered second TiN top barrier layer. The &ldquo;in situ&rdquo; post-metal quench is especially effective by employing wafer backside cooling using low temperature helium gas or argon gas, cooling the substrate from a high temperature range of 450 to 150 &deg;C., to a low temperature range near room temperature, in a short time interval of between 30 to 180 seconds. The CuAl precipitates if allowed to form, block the etch removal of the underlying TiN layer causing electrical shorts between closely spaced lines.

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Taipei, Taiwan

Chung Chang Liu