United Microelectronics Corp.

Chung-An Chen

Chih-Jung Chen

Wei-Sheng Chia

Chih-Chung Huang

Ju-Te Chen

Huan-Hsin Yeh

Shih-Ming Yen

Wen-Tsung Wu

Chi-Ching Huang

Wen-Kuang Lin

A prediction model for exposure dose is indicated by the following formula, E=E+E, wherein E represents an optimized exposure dose, Erepresents a preset exposure dose of a process control system, and Erepresents an exposure dose compensation value, and=[()/()]&#xd7;(')&#xd7;(),wherein MTTrepresents the differences between the MTT value of a previous lot and the MTT value of a next lot, CDrepresents the actual critical dimension of the mask, X represents the magnification of the mask, Erepresents the actual exposure dose of a previous lot, A&#x2032; represents an experimental value obtained from the results of different lots, Wrepresents the last batch of weights and Wrepresents an average weight, and CD, E, A&#x2032;, Wand Ware set parameters built into the process control system.

Prediction model and prediction method for exposure dose

A method for forming an anti-reflection coating (ARC) with no hole over an overlay mark is described, which applies a fluid material of the ARC onto a substrate and then conducts at least two curing steps to convert the fluid material into the ARC. Such a bottom anti-reflection coating with no hole over the overlay mark can improve accuracy of the overlay measurement of lithography, thereby improving the alignment accuracy of the lithography process.

Process for forming anti-reflection coating and method for improving accuracy of overlay measurement and alignment

A first film layer is formed over a substrate. A portion of the first film layer is removed to form a first alignment mark pattern and a first conductive layer is formed to fill the first alignment mark pattern to form a first alignment mark. A second film layer is formed and a portion of the second film layer is removed to form openings and to form a second alignment mark pattern. A second conductive layer is formed to fill the openings to form first conductive wires and to fill the second alignment mark pattern to form a second alignment mark. A third film layer and a hard mask layer are formed over the second film layer and a portion of the hard mask layer and the third film layer is removed to form via openings. A third conductive layer is formed in the via openings.

Method of forming interconnect having stacked alignment mark

A stacked alignment mark. The stacked alignment mark comprises a first alignment mark and a second alignment mark. The first alignment mark is located in a first film layer, wherein the first alignment mark is composed of a plurality of conductive wires. The second alignment mark is located in a second film layer under the first film layer. The first alignment mark is located in a first region corresponding to a second region in which the second alignment mark is located. Moreover, the second alignment mark at least contains a third region directly under a space between each two adjacent first conductive wires.

Growing community of inventors

Taichung, Taiwan

Chung-An Chen