Everdisplay Optronics (shanghai) Limited

Other

Chunchieh Huang

Weiting Chen

Chenghsien Wang

ChiaPin Kang

Chin Chih Lin

Chihhung Liu

Provided is a TFT with an improved gate insulator, having an insulator substrate, a gate layer, a gate insulator layer, a active semiconductor layer, and a source and drain electrode layer, wherein the gate insulator layer includes a first silicon nitride film, a second silicon nitride film disposed on the first silicon nitride film and a third silicon nitride film disposed on the second silicon nitride, and compared to the second silicon nitride film, each of the first silicon nitride film and the third silicon nitride film is much thinner and has a lower content of N&#x2014;H bond. Also provided is a display including said TFTs. According to the present disclosure, an improved gate insulator layer capable of withstanding higher voltage can be achieved due to the laminated structure and accordingly a TFT with excellent reliability can be formed.

Thin film transistor and manufacturing method thereof and display comprising the same

The present application discloses an OLED with an improved structure, comprising a reflective anode layer, a transparent cathode layer, an organic light-emitting layer sandwiched between the anode layer and the cathode layer, and a side reflective layer surrounding the organic light-emitting layer and forming a light exiting area together with the anode layer, wherein the light emitted from the light-emitting layer is reflected by both of the anode layer and the side reflective layer, and then leaves from the light exiting area. According to the present disclosure, the lateral light is reflected by the side reflective layer arranged around the organic light-emitting layer, such that the luminescent efficiency of the OLED with said improved structure can be significantly increased.

Organic light emitting structure

The present disclosure provides a method for measuring an offset of a sub-pixel in an OLED manufacturing process, including: depositing OLED material onto a display unit in a substrate through a hollow portion of a mask, the display unit including an effective region and a peripheral measuring region at periphery of the effective region, the OLED material forming a plurality of effective sub-pixels within the effective region and forming a plurality of dummy sub-pixels within the peripheral measuring region; and using UV light to excite at least a portion of the dummy sub-pixels of the OLED material to emit light, and measuring the offset of the dummy sub-pixel with respect to a predetermined position of a corresponding light emitting unit located on the substrate.

Growing community of inventors

Shanghai, China

Chunchieh Huang