International Business Machines Corporation

Infineon Technologies Ag

Globalfoundries Inc.

Other

Blackdiamond Innovation Group

Chun-Yung Sung

Haizhou Yin

Katherine Lynn Saenger

Brian Joseph Greene

Meikei Ieong

Min Yang

Phaedon Avouris

Fengnian Xia

Alexander Reznicek

Jack Allan Mandelman

Victor Chan

Rajesh Rengarajan

Hugen Yan

Keith E Fogel

Rajarao Jammy

Alberto V Garcia

Ramachandra Divakaruni

Alfred Grill

Ying Di Zhang

Paul Michael Solomon

Christos Dimitrios Dimitrakopoulos

John Michael Hergenrother

Massimo V Fischetti

Huilong Zhu

Louis L Hsu

Clement Hsingjen Wann

Richard Stephan Wise

Louis Lu-Chen Hsu

Tze-Chiang Chen

Hongwen Yan

Timothy James McArdle

Mukesh Vijay Khare

Kangguo Cheng

Rajiv V Joshi

Guy M Cohen

Cyril Cabral, Jr

Zhijiong Luo

Christian Lavoie

Jack Oon Chu

Stephen McConnell Gates

Ravikumar Ramachandran

Alberto Valdes Garcia

Qiqing Christine Ouyang

John Albrecht Ott

Danny Pak-Chum Shum

Louis C Hsu

Manfred Eller

Jiang Yan

Sunfei Fang

Alois Gutmann

Howard Hao Chen

Kam-Leung Lee

Matthias Hierlemann

Kevin K Dezfulian

Hung Y Ng

Scott D Allen

Devendra K Sadana

Carl John Radens

Oleg Gluschenkov

Thomas W Dyer

Robert L Wisnieff

Chandrasekhar Narayan

Kathryn Turner Schonenberg

Yu-Ming Lin

Yaocheng Liu

Marcus Oliver Freitag

Xuesong Li

Joel P Desouza

Kai Xiu

MeiKei Leong

Robert Chi-Foon Wong

Meikei Leong

Jia-Hung Wu

A variable-color accessory is provided comprising: a plurality of accessory surfaces, a light-emitting plate, a light-scattering plate, and a control unit. The light-emitting plate is mounted inside one of the accessory surfaces, where the light-emitting plate is flexible, is bent consistently with one of the accessory surfaces, and has a plurality of light-emitting diodes for emitting different light colors. The light-scattering plate is disposed between the light-emitting plate and one of the accessory surfaces, where the light-scattering plate is flexible and transmits light. The control unit is electrically connected to the light-emitting plate, to control turn-on/off of the light-emitting diodes of the light-emitting plate. A variable-color device applied to the accessory is further provided.

Variable-color accessory and variable-color device applied thereto

Structures and methods for cloaking an object to electromagnetic radiation at the microwave and terahertz frequencies include disposing a plurality of graphene sheets about the object. Intermediate layers of a transparent dielectric material can be disposed between graphene sheets to optimize the performance. In other embodiments, the graphene can be formulated into a paint formulation or a fabric and applied to the object. The structures and methods absorb at least a portion of the electromagnetic radiation at the microwave and terabyte frequencies.

Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequencies

The present invention provides a semiconductor structure in which different types of devices are located upon a specific crystal orientation of a hybrid substrate that enhances the performance of each type of device. In the semiconductor structure of the present invention, a dual trench isolation scheme is employed whereby a first trench isolation region of a first depth isolates devices of different polarity from each other, while second trench isolation regions of a second depth, which is shallower than the first depth, are used to isolate devices of the same polarity from each other. The present invention further provides a dual trench semiconductor structure in which pFETs are located on a (110) crystallographic plane, while nFETs are located on a (100) crystallographic plane. In accordance with the present invention, the devices of different polarity, i.e., nFETs and pFETs, are bulk-like devices.

Dual trench isolation for CMOS with hybrid orientations

A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm.

Graphene growth on a carbon-containing semiconductor layer

Electromagnetic interference shielding structures and methods of shielding an object form electromagnetic radiation at frequencies greater than a megahertz generally include providing highly doped graphene sheets about the object to be shielded. The highly doped graphene sheets may have a dopant concentration greater than &#x3e;1e10cm, which is effective to reflect the electromagnetic radiation or a dopant concentration of 1e10cm&#x3e;n&#x3e;0 cm, which is effective to absorb the electromagnetic radiation.

Graphene based structures and methods for shielding electromagnetic radiation

Electromagnetic interference shielding structures and methods of shielding an object form electromagnetic radiation at frequencies greater than a megahertz generally include providing doped graphene sheets about the object to be shielded. The doped graphene sheets have a dopant concentration that is effective to reflect and/or absorb the electromagnetic radiation.

A graphene layer is formed on a crystallographic surface having a non-hexagonal symmetry. The crystallographic surface can be a surface of a single crystalline semiconductor carbide layer. The non-hexagonal symmetry surface of the single crystalline semiconductor carbide layer is annealed at an elevated temperature in ultra-high vacuum environment to form the graphene layer. During the anneal, the semiconductor atoms on the non-hexagonal surface of the single crystalline semiconductor carbide layer are evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed, the carbon concentration on the surface of the semiconductor-carbon alloy layer increases. Despite the non-hexagonal symmetry of the surface of the semiconductor-carbon alloy layer, the remaining carbon atoms can coalesce to form a graphene layer having hexagonal symmetry.

Graphene growth on a non-hexagonal lattice

An electromagnetic device and method for fabrication includes a substrate and a layer of graphene formed on the substrate. A metallization layer is patterned on the graphene. The metallization layer forms electrodes such that when the graphene is excited by light, terahertz frequency radiation is generated.

Generation of terahertz electromagnetic waves in graphene by coherent photon-mixing

Methods for fabricating a CMOS structure use a first gate stack located over a first orientation region of a semiconductor substrate. A second gate material layer is located over the first gate stack and a laterally adjacent second orientation region of the semiconductor substrate. A planarizing layer is located upon the second gate material layer. The planarizing layer and the second gate material layer are non-selectively etched to form a second gate stack that approximates the height of the first gate stack. An etch stop layer may also be formed upon the first gate stack. The resulting CMOS structure may comprise different gate dielectrics, metal gates and silicon gates.

CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materials

A method for synthesizing a thin film, the method containing the steps of: (a) providing a substrate support assembly containing at least two selectively interdigitable substrate support fixtures; (b) loading a substrate for thin film synthesis onto said at least two fixtures; (c) interdigitating said at least two fixtures; (d) positioning said at least two fixtures in a reaction chamber and forming a thin film on a surface of the substrate; and (e) unloading the substrate from said at least two fixtures.

Method for synthesizing a thin film

A graphene layer is provided onto at least an upper surface of a first dielectric material which includes at least one first conductive region contained therein. At least one semiconductor device is formed using the graphene layer as an element of the at least one semiconductor device. After forming the at least one semiconductor device, a second dielectric material is formed covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material. The second dielectric that is formed includes at least one second conductive region contained therein, and the at least one second conductive region is in contact with a conductive element of the at least one semiconductor device.

Method for forming semiconductor chip with graphene based devices in an interconnect structure of the chip

A semiconductor device and a method of fabricating a semiconductor device, wherein the method includes forming, on a substrate, a plurality of planarized fin bodies to be used for customized fin field effect transistor (FinFET) device formation; forming a nitride spacer around each of the plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film. The fabricated semiconductor device is adapted to be used in customized applications as a customized semiconductor device.

Sea-of-fins structure on a semiconductor substrate and method of fabrication

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Poughkeepsie, NY, United States of America

Chun-Yung Sung