United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Chun-Yuan Wu

Chin-Cheng Chien

Chin-Fu Lin

Chih-Chien Liu

Teng-Chun Tsai

Chia-Lin Hsu

Chia-Fu Hsu

Chien-Hung Chen

Yu-Ru Yang

Shih-Hsien Huang

Ted Ming-Lang Guo

Huai-Tzu Chiang

Cheng-Tzung Tsai

Chan-Lon Yang

Hsin-Fu Huang

Shu-Yen Chan

Yu-Shu Lin

Sheng-Hao Lin

Chi-Mao Hsu

Yen-Chen Chen

Chiu-Hsien Yeh

Hao-Ming Lee

Hsin-Kuo Hsu

Chien-Ting Lin

Shih-Fang Tzou

Kun-Hsien Lin

Zhibiao Zhou

Tien-Wei Yu

Chen-Bin Lin

Chi-Fa Ku

Shao-Hui Wu

Ming-Hua Chang

Yao-Hung Liu

Tien-I Wu

Szu-Hao Lai

Hai Tao Liu

Shouguo Zhang

Ming Hua Du

Xiao Wu

Yu-Cheng Tung

Yi-Wei Chen

En-Chiuan Liou

Li-Wei Feng

Shih-Hung Tsai

Chih-Wei Yang

Chien-Ting Ho

Ying-Chiao Wang

Chin-I Liao

Min-Chuan Tsai

Po-Cheng Huang

YI-Fan Li

Ling-Chun Chou

Chun-Jen Chen

Po-Chun Chen

Tsung-Ying Tsai

I-Cheng Hu

Tsung-Hung Chang

Yu-Chieh Lin

Xu Yang Shen

Bin-Siang Tsai

Chen-Yi Weng

Jing-Yin Jhang

Kuo-Chih Lai

Tzyy-Ming Cheng

Kun-Ju Li

Zhi-Cheng Lee

Che-Hua Hsu

Yi-Wen Chen

Hung-Lin Shih

Tsai-Yu Wen

Yu-Ting Li

Yu-Ying Lin

Cheng-Guo Chen

Ai-Sen Liu

Zhi-Biao Zhou

Fu-Shou Tsai

Po-Jui Liao

Jie-Ning Yang

Wen-Chin Lin

Chun-Ling Lin

Shao-Hua Hsu

Chih-Hsun Lin

Chia-Hsun Tseng

Guang-Yaw Hwang

Yang-Ju Lu

Rung-Yuan Lee

Tzung-Ying Lee

Jen-Po Huang

Ko-Wei Lin

Wei-Jen Wu

Tsung-Lung Tsai

Hung-Ling Shih

Jung-Tsung Tseng

Yeng-Peng Wang

Jia-Feng Fang

Qinggang Xing

Kun-Hsin Chen

Seng Wah Liau

A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Semiconductor device

Semiconductor device and method for fabricating the same

A semiconductor device includes a memory region, a plurality of bit lines in the memory region, a first low-k dielectric layer on each sidewall of each bit line, a plurality of storage node regions between the bit lines, and a second low-k dielectric layer surrounding each storage node region.

Semiconductor device and method of manufacturing a semiconductor device

A semiconductor device includes a substrate, a first well formed in the substrate, a second well formed in the substrate, a first fin formed on the first well, and a second fin formed on the second well. The first well includes a first conductivity type, the second well includes a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other. The substrate includes a first semiconductor material. The first fin and the second fin include the first semiconductor material and a second semiconductor material. A lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The first semiconductor material in the first fin includes a first concentration, the first semiconductor material in the second fin includes a second concentration, and the second concentration is larger than the first concentration.

Semiconductor device and manufacturing method thereof

A semiconductor structure including a semiconductor substrate and at least a fin structure formed thereon. The semiconductor substrate includes a first semiconductor material. The fin structure includes a first epitaxial layer and a second epitaxial layer formed between the first epitaxial layer and the semiconductor substrate. The first epitaxial layer includes the first semiconductor material and a second semiconductor material. A lattice constant of the second semiconductor material is different from a lattice constant of the first semiconductor material. The second epitaxial layer includes the first semiconductor material and the second semiconductor material. The second epitaxial layer further includes conductive dopants.

Semiconductor structure and manufacturing method thereof

A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a shallow trench isolation (STI) around the fin-shaped structure; forming a liner on the fin-shaped structure; and removing the liner and part of the fin-shaped structure so that a sidewall of the fin-shaped structure comprises a curve. Moreover, the method includes forming an epitaxial layer around the sidewall of the fin-shaped structure while a top surface of the fin-shaped structure is exposed.

Method for fabricating a curve on sidewalls of a fin-shaped structure

Provided is a FinFET including a substrate, at least one fin and at least one gate. A portion of the at least one fin is embedded in the substrate. The at least one fin includes, from bottom to top, a seed layer, a stress relaxation layer and a channel layer. The at least one gate is across the at least one fin. A method of forming a FinFET is further provided.

Fin-type field effect transistor and method of forming the same

An epitaxial process applying light illumination includes the following steps. A substrate is provided. A dry etching process and a wet etching process are performed to form a recess in the substrate, wherein an infrared light illuminates while the wet etching process is performed. An epitaxial structure is formed in the recess.

Epitaxial process applying light illumination

The present invention provides a method of forming a semiconductor device. First, a substrate having a first insulating layer formed thereon is provided. After forming an oxide semiconductor layer on the first insulating layer, two source/drain regions are formed on the oxide semiconductor layer. A bottom oxide layer is formed to entirely cover the source/drain regions, following by forming a high-k dielectric layer on the bottom oxide layer. Next, a thermal process is performed on the high-k dielectric layer, and a plasma treatment is performed on the high-k dielectric layer in the presence of a gas containing an oxygen element.

Method for forming semiconductor device

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a plurality of fin-shaped structures and a first shallow trench isolation (STI) around the fin-shaped structures on the first region and the second region; forming a patterned hard mask on the second region; removing the fin-shaped structures and the first STI from the first region; forming a second STI on the first region; removing the patterned hard mask; and forming a gate structure on the second STI.

Method for fabricating shallow trench isolation between fin-shaped structures

The present invention proposes a method of manufacturing a semiconductor device, which includes the steps of providing a substrate with a memory region and a logic region, forming bit lines and logic gates respectively in the memory region and the logic region, wherein storage node regions are defined between bit lines, forming a first low-K dielectric layer on sidewalls of bit lines, forming a doped silicon layer in the storage node regions between bit lines, wherein the top surface of doped silicon layer is lower than the top surface of bit line, forming a second low-K dielectric layer on sidewalls of storage node regions, and filling up storage node regions with metal plugs.

Method of manufacturing a semiconductor device

A semiconductor device comprises a semiconductor substrate and a semiconductor fin. The semiconductor substrate has an upper surface and a recess extending downwards into the semiconductor substrate from the upper surface. The semiconductor fin is disposed in the recess and extends upwards beyond the upper surface, wherein the semiconductor fin is directly in contact with semiconductor substrate, so as to form at least one semiconductor hetero-interface on a sidewall of the recess.

A semiconductor device including a substrate, a spacer and a high-k dielectric layer having a U-shape profile is provided. The spacer located on the substrate surrounds and defines a trench. The high-k dielectric layer having a U-shape profile is located in the trench, and the high-k dielectric layer having a U-shape profile exposes an upper portion of the sidewalls of the trench.

Fabricating method of a semiconductor device with a high-K dielectric layer having a U-shape profile

Growing community of inventors

Yun-Lin County, Taiwan

Chun-Yuan Wu