Epistar Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Global Unichip Corporation

Auo Corporation

Novatek Microelectronics Corp.

National Taiwan Normal University

Au Optronics Corporation

Tsinghua University

Chun-Yu Lin

Chih-Chiang Lu

Yi-Ming Chen

Tzu-Chieh Hsu

Hsin-Chih Chiu

Ching-Pei Lin

Chien-Fu Huang

Wen-Luh Liao

Ching-Huai Ni

Kun-Cheng Tien

Ming-Dou Ker

Rong-Ren Lee

Wen-Tai Wang

Yao-Ning Chan

Hsin-Chan Chung

Hung-Ta Cheng

Yao-Ru Chang

Ru-Gun Liu

Shih-Chang Lee

Ying-Chou Cheng

Kuo-Feng Huang

Tzu-Chien Tzeng

Yung-Fu Chang

Yi-Ching Lee

Yi-Jie Chen

Jia-Long Wu

Feng-Yuan Chiu

Cheng-Long Yeh

Ming-Siang Huang

Shu-Hao Huang

Kun-De Lin

Yi-Yang Chiu

Ming-Tzung Liou

Jie-Ting Chen

Min-Hsun Hsieh

Tsai-Sheng Gau

Kuei-Liang Lu

Hao-Min Ku

Yi-Wen Huang

Tsung-Hsien Yang

Rong-Fu Lin

Yu-Chi Wang

Ya-Hui Chang

Fu-Chun Tsai

Chih-Peng Ni

Cheng-Hong Chen

Chung-Hao Wang

Jun-Yi Li

Chung-Hsun Chien

Shih-Ming Chang

Chao-Hsing Chen

Jiun-Rong Pai

Chun-Wei Chang

Ju-Lin Huang

Chen Ou

Ming-Hsiang Song

Li-Wei Chu

Jia-Kuen Wang

Ming Hsien Tsai

Keko-Chun Liang

Wen-Hung Chuang

Tzu-Yao Tseng

Bo-Jiun Hu

Tsung-Hsun Chiang

Meng-Ting Lee

Ming-Lung Chen

Yu-Ren Peng

Min-Yen Tsai

Chun-Cheng Chen

Kuan-Yi Lee

Shao-Ping Lu

I-Chang Shih

Chien Fang Huang

Yu-Hsuan Lai

Bing-Syun Yeh

Chun-Fu Tsai

Yu-Pin Kuo

Rong-Kun Chang

Ping-Chang Lin

Chung-Tso Chen

Chung-Ta King

Chang-Hsiu Wu

Wei-Wun Jheng

Jyu-Hua Hsiao

Kam Heng Lee

Chun-Yu Chen

A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Semiconductor light emitting device and method of fabricating the same

A method includes: positioning a wafer in a first probe chamber of a first probe apparatus by a robot arm, the first probe apparatus being adjacent a transfer rail, the robot arm, in operation, moving along the transfer rail; testing the wafer by the first probe apparatus; following the testing, transferring the wafer to an environmental buffer attached to the first probe chamber; cooling the wafer in the environmental buffer; and following the cooling, transferring the wafer from the environmental buffer to a second probe chamber of a second probe apparatus by the robot arm, the second probe apparatus being adjacent the transfer rail and offset from the first probe apparatus.

Wafer test system and methods

A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.

Semiconductor device

A display panel includes a plurality of driving electrode regions and a plurality of wiring regions connected between the driving electrode regions. A (2n−1)th wiring region extended from a (2n−1)th driving electrode region toward a (2n)th driving electrode region has a wiring extending direction forming a first included angle with an arrangement direction, and a (2n)th wiring region extended from the (2n)th driving electrode region toward a (2n+1)th driving electrode region has a wiring extending direction forming a second included angle with the arrangement direction, and a (2n+1)th wiring region extended from the (2n+1)th driving electrode region toward a (2n+2)th driving electrode region has a wiring extending direction forming a third included angle with the arrangement direction, wherein n is a positive integer. At least one of the first included angle, the second included angle and the third included angle is positive and at least one of them is negative.

Display panel

An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 μm to 1 μm.

Light-emitting device

A transparent display panel with driving electrode regions, circuit wiring regions, and optically transparent regions is provided. The driving electrode regions are arranged into an array in a first direction and a second direction. An average light transmittance of the circuit wiring regions is less than ten percent, and an average light transmittance of the optically transparent regions is greater than that of the driving electrode regions and the circuit wiring regions. The first direction intersects the second direction. The circuit wiring regions connect the driving electrode regions at intervals, such that each optically transparent region spans among part of the driving electrode regions. The transparent display panel includes first signal lines and second signal lines extending along the circuit wiring regions, and each circuit wiring region is provided with at least one of the first signal lines and at least one of the second signal lines.

Transparent display panel

The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

Method of manufacturing a light-emitting device

An electrophoretic display device includes a first component substrate, a second component substrate, a display medium layer, and an isolation structure. The first component substrate includes a first carrier and a plurality of pixel electrodes. The pixel electrodes are arranged in an array on the first carrier. The second component substrate includes a second carrier and at least one common electrode. The at least one common electrode is overlapped with the pixel electrodes. The display medium layer and the isolation structure are located between the first carrier and the second carrier. The display medium layer includes a plurality of charged particles. The isolation structure includes a barrier structure and an isolation electrode. The isolation electrode is formed on a bottom surface of the barrier structure and adjacent to the display medium layer.

Electrophoretic display device and driving method thereof

A display panel includes a plurality of driving electrode regions and a plurality of wiring regions. The plurality of wiring regions are connected between the driving electrode regions. The driving electrode regions are arranged in sequence along an arrangement direction. A (2&#x2212;1)th wiring region extended from a (2&#x2212;1)th driving electrode region toward a (2)th driving electrode region has a wiring extending direction forming a positive included angle with the arrangement direction, and a (2)th wiring region extended from the (2)th driving electrode region toward a (2+1)th driving electrode region has a wiring extending direction forming a negative included angle with the arrangement direction, wherein n is a positive integer.

A total internal reflection display includes a sub-pixel, a reflecting layer, at least one first stereoscopic electrode and a display medium layer. The sub-pixel is defined by a color filter and a black matrix disposed adjacently to the color filter. The reflecting layer is located beneath the sub-pixel. The first stereoscopic electrode is located beneath the black matrix. The width of the first stereoscopic electrode is less than the width of the black matrix. The display medium layer is located between the sub-pixel and the reflecting layer. The height of the first stereoscopic electrode is greater than half of the thickness of the display medium layer.

Total internal reflection display

An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure. There is a first distance between the electrode and the nearest contact portion, and a ratio of the first distance to the thickness of the semiconductor stack is larger than 5.

A semiconductor structure corresponds to a first diode and a second diode connected in series. A first well region is on a first deep well region. Two second well regions are at two sides of the first well region respectively. A first doping region and a second doping region are on the first well region. A first isolation region is between the first doping region and the second doping region. A third well region is on a second deep well region. Two fourth well regions are at two sides of the third well region respectively. A third doping region and a fourth doping region are on the third well region. A second isolation region is between the third doping region and the fourth doping region. The second doping region and third doping region are connected. The second deep well region is separated from the first deep well region.

Semiconductor structure and electrostatic discharge protection circuit

Growing community of inventors

Hsinchu, Taiwan

Chun-Yu Lin