Applied Materials, Inc.

Mattson Technology, Inc

Beijing E-Town Semiconductor Technology, Co., Ltd

Other

International Business Machines Corporation

Lam Research Corporation

Chun Yan

Xinyu Bao

Hua Chung

Yan Ye

Schubert S Chu

Diana Xiaobing Ma

Michael Xiaoxuan Yang

Pavel Ionov

Melitta Manyin Hon

Tsai Wen Sung

Ajay Kumar

Eric Andrew Joseph

Hiroyuki Miyazoe

Wai-Fan Yau

Chentsau Chris Ying

Allen Richard Zhao

Jie Yuan

Mark Hoinkis

Xiaoyi Chen

Peter Chang-Lin Hsieh

Shanyu Wang

Hong Shih

Errol Antonio C Sanchez

Keiji Horioka

Bryan Y Pu

Roger Alan Lindley

Evans Yip Lee

Douglas H Burns

James Chang Wang

Jim Zhongyi He

Taeho Shin

Dean Li

Sung Ho Kim

Panyin Hughes

Qi Li

Zhiyuan Ye

Guowen Ding

Xinliang Lu

Gerald Z Yin

Peter K Loewenhardt

Xikun Wang

Nicholas C M Fuller

Arthur H Sato

Michael N Grimbergen

Hui W Chen

Satheesh Kuppurao

Padmapani Nallan

Qi Zhang

Tuochuan Huang

Jerome S Hubacek

Ying Rui

Enrico Magni

Chii Guang Lee

Catherine Zhou

Ting Xie

Mahmoud Dahimene

Daxing Ren

Ping Han Hsieh

John M Yamartino

Songlin Xu

Dixit V Desai

Zhenwen Ding

Bi Ming Yen

Teng-Fang Kuo

Arthur Y Chen

Peter J Lembesis

Ralph Kerns

Sio On Lo

Wade Zawalski

Gary C Hsueh

Hong Ching Shan

Dae J Lim

Xueyan Qian

Arnold Kolandenko

Hui Chen

Adam Lane

Xuefeng Hua

Dougyong Sung

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate

Methods for processing a workpiece are provided. Conducting a thermal treatment on a workpiece are provided. The workpiece contains at least one layer of metal. The method can include generating one or more species from a process gas. The process gas can include hydrogen or deuterium. The method can include filtering the one or more species to create a filtered mixture and exposing the workpiece to the filtered mixture. An oxidation process on a workpiece are provided. The method can be conducted at a process temperature of less than 350&#xb0; C.

Processing of workpieces using fluorocarbon plasma

Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.

Processing of workpieces using deposition process and etch process

Apparatus, systems, and methods for conducting a silicon containing material removal process on a workpiece are provided. In one example implementation, the method can include generating species from a process gas in a first chamber using an inductive coupling element. The method can include introducing a fluorine containing gas with the species to create a mixture. The mixture can include exposing a silicon structure of the workpiece to the mixture to remove at least a portion of the silicon structure.

Silicon mandrel etch after native oxide punch-through

Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece has at least one material layer and at least one structure thereon. The method includes admitting a process gas into a plasma chamber, generating one or more species from the process gas, and filtering the one or more species to create a filtered mixture. The method further includes providing RF power to a bias electrode to generate a second mixture and exposing the workpiece to the second mixture to etch a least a portion of the material layer and to form a film on at least a portion of the material layer.

Spacer etching process

Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a spacer treatment process to expose the workpiece to species generated from a first process gas in a first plasma to perform a spacer treatment process on a spacer layer on the workpiece. The first plasma can be generated in the processing chamber. After performing the spacer treatment process, the method can include performing a spacer etch process to expose the workpiece to neutral radicals generated from a second process gas in a second plasma to etch at least a portion of the spacer layer on the workpiece. The second plasma can be generated in a plasma chamber that is remote from the processing chamber.

Spacer open process by dual plasma

Apparatus, systems, and methods for processing a workpiece are provided. In one example implementation, the workpiece can include a silicon nitride layer and a silicon layer. The method can include admitting an ozone gas into a processing chamber. The method can include exposing the workpiece to the ozone gas. The method can include generating one or more species from a process gas using a plasma induced in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can further include exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the silicon nitride layer more than the silicon layer. Due to ozone gas reacting with surface of silicon layer prior to etching process with fluorine-containing gas, selective silicon nitride etch over silicon can be largely promoted.

Ozone treatment for selective silicon nitride etch over silicon

Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise Group IV source/drain growth in semiconductor devices. Benefits of this disclosure include precise fin size control in devices, such as 10 nm FinFET devices, and increased overall device yield. The method of integrated clean and recess includes establishing a low pressure processing environment in the processing volume, and maintaining the low pressure processing environment while flowing a first gas over a substrate in a processing volume, depositing a salt on the substrate, heating the processing volume to greater than 90&#xb0; C., purging the processing volume with a second inert gas, and recessing a source/drain region disposed on the substrate.

Integrated system and method for source/drain engineering

Native oxides and residue are removed from surfaces of a substrate by performing a multiple-stage native oxide cleaning process. In one example, the method for removing native oxides from a substrate includes supplying a first gas mixture including an inert gas onto a surface of a material layer disposed on a substrate into a first processing chamber, wherein the material layer is a III-V group containing layer for a first period of time, supplying a second gas mixture including an inert gas and a hydrogen containing gas onto the surface of the material layer for a second period of time, and supplying a third gas mixture including a hydrogen containing gas to the surface of the material layer while maintaining the substrate at a temperature less than 550 degrees Celsius.

Method for removing native oxide and residue from a III-V group containing surface

Implementations disclosed herein relate to methods for controlling substrate outgassing of hazardous gasses after an epitaxial process. In one implementation, the method includes providing a substrate comprising an epitaxial layer into a transfer chamber, wherein the transfer chamber has an ultraviolet (UV) lamp module disposed adjacent to a top ceiling of the transfer chamber, flowing an oxygen-containing gas into the transfer chamber through a gas line of the transfer chamber, flowing a non-reactive gas into the transfer chamber through the gas line of the transfer chamber, activating the UV lamp module to oxidize residues or species on a surface of the substrate to form an outgassing barrier layer on the surface of the substrate, ceasing the flow of the oxygen-containing gas and the nitrogen-containing gas into the transfer chamber, pumping the transfer chamber, and deactivating the UV lamp module.

UV radiation system and method for arsenic outgassing control in sub 7nm CMOS fabrication

Embodiments described herein generally provide a method and apparatus to form semiconductor devices. Specifically, embodiments describe an apparatus and methods of forming channels in sub-5 nm node FinFETS. The method provides for various processing steps to deposit a dielectric layer over a substrate. The method continues by etching a trench in the dielectric layer, depositing a silicon layer within the trench, depositing a buffer layer on top of the silicon layer in the trench, removing a portion of the buffer layer to form a planar surface, etching the buffer layer into a v-shape, and depositing a channel layer on top of the v-shaped buffer layer. The v-shaped buffer layer advantageously negates facet formation and provides for an InGaAs fin-channel with uniform distribution of indium and gallium throughout the channel.

Method of uniform channel formation

Embodiments disclosed herein generally relate to methods for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a III-V epitaxial growth process or an etch clean process, and prior to additional processing. An oxygen containing gas is flowed to a substrate in a load lock chamber, and subsequently a non-reactive gas is flowed to the substrate in the load lock chamber. As such, hazardous gases and outgassing residuals are decreased and/or removed from the substrate such that further processing may be performed.

Method for wafer outgassing control

Methods of sub-10 nm fin formation are disclosed. One method includes patterning a first dielectric layer on a substrate to form one or more projections and a first plurality of spaces, and depositing a first plurality of columns in the first plurality of spaces. The first plurality of columns are separated by a second plurality of spaces. The method also includes depositing a second dielectric layer in the second plurality of spaces to form a plurality of dummy fins, removing the first plurality of columns to form a third plurality of spaces, depositing a second plurality of columns in the third plurality of spaces, removing the one or more projections and the plurality of dummy fins to form a fourth plurality of spaces, and depositing a plurality of fins in the fourth plurality of spaces. The plurality of fins have a width between 5-10 nm.

Self-aligned process for sub-10nm fin formation

The present disclosure generally relate to methods of processing a substrate in an epitaxy chamber. The method includes exposing a substrate having one or more fins to a group IV-containing precursor and a surfactant containing antimony to form an epitaxial film over sidewalls of the one or more fin structures, wherein the surfactant containing antimony is introduced into the epitaxy chamber before epitaxial growth of the epitaxial film, and a molar ratio of the surfactant containing antimony to the group IV-containing precursor is about 0.0001 to about 10.

Method of epitaxial growth shape control for CMOS applications

Embodiments of the present disclosure provide methods for conditioning a plasma processing chamber to maintain a reliable and predicable processing conditions while performing a oxide removal process on a substrate. In one embodiment, a method for conditioning a plasma processing chamber includes supplying a first gas mixture including an inert gas into a processing chamber a first period of time in absent of a substrate, supplying a second gas mixture including an inert gas, a hydrogen containing gas and a halogen containing gas for a second period of time in absent of the substrate, and supplying a third gas mixture including an inert gas and a hydrogen containing gas for a third period of time in absent of the substrate in the processing chamber.

Method for conditioning a processing chamber for steady etching rate control

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Chun Yan