Electronics and Telecommunications Research Institute

Industry-University Cooperation Foundation Hanyang University

Faculty of Science and Technology New University of Lisbon

Chun Won Byun

Chi Sun Hwang

Kyoung Ik Cho

Hye Yong Chu

Shin Hyuk Yang

Byoung Gon Yu

Seung Youl Kang

Sung Min Yoon

Min Ki Ryu

Soon Won Jung

Sang Hee Park

Doo Hee Cho

Byong Deok Choi

Nam Sung Cho

Yong Duck Kim

Chan Mo Kang

Elvira M C Fortunato

Rodrigo F P Martins

Ana R X Barros

Nuno F O Correia

Pedro M C Barquinha

Vitor M L Figueiredo

A pixel circuit may comprise: a first transistor having a first terminal connected to a data line and to which a data signal is applied and a gate terminal connected to a scan line and to which a scan signal is applied; a third transistor having a gate terminal connected to a second terminal of the first transistor and a second terminal connected to a light emitting device; a capacitor having a second terminal commonly connected to the second terminal of the first transistor and the gate terminal of the third transistor; and a second transistor having a second terminal commonly connected to a first terminal of the capacitor and a first terminal of the third transistor, a first terminal connected to a first power supply voltage, and a gate terminal connected to an emission line to which an emission signal is applied.

Pixel circuit and driving method thereof and display panel having the same

A pixel circuit driving method of controlling an operation of a light-emitting element provided in a pixel of a display panel may comprise: applying pulse amplitude modulation (PAM) signals having a plurality of levels to a first terminal of a first transistor having a second terminal connected to a control terminal of a second transistor configured to drive the light-emitting element with a current according to a gray scale required for the light-emitting element; and applying a PAM signal of any one level selected from the PAM signals to the control terminal of the second transistor during each sub-frame time corresponding to a turn-on time of the first transistor controlled by a pulse width modulation (PWM) signal having a plurality of sub-frames in a single frame according to the gray scale.

Pixel circuit driving method, pixel circuit therefor, and display module using the same

Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu&#x2014;Sn alloy, and a nickel tin oxide containing a Ni&#x2014;Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.

Semiconductor device and method of manufacturing the same

Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.

Nonvolatile memory cell and method of manufacturing the same

A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.

Method of manufacturing transparent transistor with multi-layered structures

Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

Transparent nonvolatile memory thin film transistor and method of manufacturing the same

Provided is a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. Here, the lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. Thus, the use of the multi-layered transparent conductive layer can ensure transparency and conductivity, overcome a problem of contact resistance between the source and drain electrodes and a semiconductor, and improve processibility by patterning the multi-layered transparent conductive layer all at once, while deposition is performed layer by layer.

Transparent transistor with multi-layered structures and method of manufacturing the same

Provided is a composition for an oxide semiconductor thin film and a field effect transistor (FET) using the composition. The composition includes from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnO); and remaining molar percentage of an aluminum oxide (AlO). The thin film formed of the composition remains in amorphous phase at a temperature of 400&#xb0; C. or less. The FET includes an active layer formed of the composition and has improved electrical characteristics. The FET can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.

Composition for oxide semiconductor thin film and field effect transistor using the composition

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Daejeon, South Korea

Chun Won Byun