Taiwan Semiconductor Manufacturing Comp. Ltd.

United Microelectronics Corp.

Chun-Wen Cheng

Chia-Hua Chu

Jung-Huei Peng

Yi-Shao Liu

Kuei-Sung Chang

Fei-Lung Lai

Chun-Ren Cheng

Shang-Ying Tsai

Chung-Hsien Lin

Yi-Chuan Teng

Yuan-Chih Hsieh

Yu-Chia Liu

Yi-Hsien Chang

Hung-Chia Tsai

Lan-Lin Chao

Kai-Chih Liang

Ping-Yin Liu

Tung-Tsun Chen

Chia-Shiung Tsai

Alexander Kalnitsky

Ching-Ray Chen

Jui-Cheng Huang

Jiou-Kang Lee

Yao-Te Huang

Te-Hao Lee

Hung-Hua Lin

Hsin-Ting Huang

Chin-Hua Wen

Li-Cheng Chu

Shiang-Chi Lin

Tzu-Heng Wu

Chun Yin Tsai

Wen Cheng Kuo

Li-Min Hung

Chin-Yi Cho

Chun-Yin Tsai

Xin-Hua Huang

Allen Timothy Chang

Yi Heng Tsai

Wei-Cheng Shen

Chia-Pao Shu

Chen Hsiung Yang

Wei-Jhih Mao

Wei-Cheng Lin

Shing-Chyang Pan

Shih-Wei Lin

Chin-Wei Liang

Alex Kalnitsky

Martin Liu

Yi-Ren Wang

Chien-Kuo Yang

Ta-Chuan Liao

Richard Chu

En-Chan Chen

Chi-Hang Chin

Tai-Bang An

Jiun-Rong Pai

Hsin-Chieh Huang

Hsu-Shui Liu

Lee-Chuan Tseng

Ming-Ta Lei

Shou-Wen Kuo

Rashid Bashir

Ting-Hau Wu

Chia-Wen Liang

Chien-Fa Lee

Cheng-Yu Hsieh

Mingo Liu

Hsin-Chih Chiang

Yi-Chien Wu

Hsueh-An Yang

Wen-Cheng Kuo

Wen-Tuan Lo

Chin-Lin Chou

Tsung-Lin Hsieh

Shih-Chang Liu

Cheng-Yuan Tsai

Cheng-Hsiang Hsieh

Sheng-Yuan Hsueh

Wen-Chuan Tai

Han-Chin Chiu

Hsiang-Fu Chen

Chia-Ming Hung

Ching-Kai Shen

Yu-Nu Hsu

Li-Chung Peng

Ruey-Chyr Lee

Yi-Heng Tsai

Nien-Tsung Tsai

Richard Lee

Te-Hsi Lee

Ming-Dao Wu

Chien-Hsuan Tai

Li-Chen Chu

H T Huang

Lan-Lin

Chia-Huan Chu

Vincent Hsueh

Kang-Che Huang

Hung Hua Lin

A stacked semiconductor structure includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth D in the second substrate. A movable structure is disposed over the front surface of the second substrate and suspending over the cavity. The movable structure includes a dielectric membrane, metal units over the dielectric membrane and a cap dielectric layer over the metal units. Second bonding features are over the cap dielectric layer and bonded to the first bonding features. The second bonding features extend through the cap dielectric layer and electrically coupled to the metal units.

Stacked semiconductor structure and method of forming the same

Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) package comprising a wire-bond damper. A housing structure overlies a support substrate, and a MEMS structure is between the support substrate and the housing structure. The MEMS structure comprises an anchor, a spring, and a movable mass. The spring extends from the anchor to the movable mass to suspend and allow movement of the movable mass in a cavity between the support substrate and the housing structure. The wire-bond damper is on the movable mass or structure surrounding the movable mass. For example, the wire-bond damper may be on a top surface of the movable mass. As another example, the wire-bond damper may be on the support substrate, laterally between the anchor and the movable mass. Further, the wire-bond damper comprises a wire formed by wire bonding and configured to dampen shock to the movable mass.

Wire-bond damper for shock absorption

A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.

Outgassing material coated cavity for a micro-electro mechanical system device and methods for forming the same

The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure, an isolation layer, an interface layer in an opening of the isolation layer, and a metal crown structure over the interface layer. The interface layer and the metal crown structure are disposed on opposite side of the transistor from a gate structure.

BioFET device having a metal crown structure as a sensing layer disposed on an oxide layer formed under a channel region of a transistor

Disclosed is a vacuum chuck and a method for securing a warped semiconductor substrate during a semiconductor manufacturing process so as to improve its flatness during a semiconductor manufacturing process. For example, a semiconductor manufacturing system includes: a vacuum chuck configured to hold a substrate, wherein the vacuum chuck comprises, a plurality of vacuum grooves located on a top surface of the vacuum chuck, wherein the top surface is configured to face the substrate; and a plurality of flexible seal rings disposed on the vacuum chuck and extending outwardly from the top surface, wherein the plurality of flexible seal rings are configured to directly contact a bottom surface of the substrate and in adjacent to the plurality of vacuum grooves so as to form a vacuum seal between the substrate and the vacuum chuck, and wherein each of the plurality of flexible seal rings has a zigzag cross section.

Vacuum wafer chuck for manufacturing semiconductor devices

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.

Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure

Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

Method and structure for CMOS-MEMS thin film encapsulation

Various embodiments of the present disclosure are directed towards an electronic device that comprises a semiconductor substrate having a first surface opposite a second surface. The semiconductor substrate at least partially defines a cavity. A first microelectromechanical systems (MEMS) device is disposed along the first surface of the semiconductor substrate. The first MEMS device comprises a first backplate and a diaphragm vertically separated from the first backplate. A second MEMS device is disposed along the first surface of the semiconductor substrate. The second MEMS device comprises spring structures and a moveable element. The spring structures are configured to suspend the moveable element in the cavity. A segment of the semiconductor substrate continuously laterally extends from under a sidewall of the first MEMS device to under a sidewall of the second MEMS device.

MEMS microphone and MEMS accelerometer on a single substrate

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a first dielectric layer formed over the substrate. The semiconductor device structure also includes a first movable membrane formed over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion and a first edge portion connecting to the first corrugated portion. The semiconductor device structure further includes a second dielectric layer formed over the first movable membrane. In addition, the first edge portion is sandwiched between the first dielectric layer and the second dielectric layer, the first corrugated portion is partially sandwiched between the first dielectric layer and the second dielectric layer and is partially exposed by a cavity, and a bottom surface of the first corrugated portion is lower than a bottom surface of the first edge portion.

Semiconductor device structure with movable membrane

A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.

Micro-electro mechanical system device containing a bump stopper and methods for forming the same

Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) device. The method includes forming a filter stack over a carrier substrate. The filter stack comprises a particle filter layer having a particle filter. A support structure layer is formed over the filter stack. The support structure layer is patterned to define a support structure in the support structure layer such that the support structure has one or more segments. The support structure is bonded to a MEMS structure.

Support structure for MEMS device with particle filter

A biochip including a fluidic substrate having an opening extending completely through the fluidic substrate. The biochip further includes a silicon oxide coating on the fluidic substrate. The biochip further includes a plurality of sidewalls on the fluidic substrate, wherein the plurality of sidewalls defines a channel in fluid communication with the opening, the silicon oxide coating is between adjacent sidewalls of the plurality of sidewalls, and each of the plurality of sidewalls comprises polydimethylsiloxane (PDMS). The biochip further includes a detection substrate spaced from the fluidic substrate.

Biochip having a channel

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Zhubei, Taiwan

Chun-Wen Cheng