Advanced Semiconductor Engineering, Inc.

Chun-Wei Shih

Chin-Li Kao

Huang-Hsien Chang

Yuan-Feng Chiang

Tai-Yuan Huang

Chung-Hung Lai

Sheng-Wen Yang

Chin-Feng Wang

Sing-Syuan Shiau

Chuan-Yung Shih

Shao-Ci Huang

Yu-Chi Wang

A substrate structure and a semiconductor package structure are provided. The substrate structure includes a first dielectric layer, a pad and a conductive structure. The first dielectric layer has a first surface and a second surface opposite to the first surface. The pad is adjacent to the first surface and at least partially embedded in the first dielectric layer. The first dielectric layer has an opening exposing the pad, and a width of the opening is less than a width of the pad. The conductive structure is disposed on the pad and composed of a first portion outside the opening of the first dielectric layer and a second portion embedded in the opening of the first dielectric layer. The first portion has an aspect ratio exceeding 1.375.

Substrate structure and semiconductor package structure

In one or more embodiments, an apparatus for processing a wafer includes a ceramic wall, a metal wall and a frame. The ceramic wall defines a chamber for accommodating the wafer. The ceramic wall has a first surface defining a first opening. The metal wall surrounds the ceramic wall. The metal wall has a second surface defining a second opening adjacent to the first opening. The frame covers the second surface.

Semiconductor package device and method of manufacturing the same

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Kaohsiung, Taiwan

Chun-Wei Shih