United Microelectronics Corp.

E-da Hospital

Chun-Wei Kang

Chih-Sheng Chang

Bo-Wei Huang

Ho-Yu Lai

Chien-Li Kuo

Ching-Li Yang

Yu-Han Tsai

Chung-Sung Chiang

Chih-Kun Hsiao

Yi-Jung Tsai

Hao-Yuan Hsiao

Yuan-Kun Tu

Teng-Yao Yang

Shang-Hua Yu

A method for fabricating a metal-insulator-metal (MIM) capacitor is provided. The MIM capacitor includes a substrate, a first metal layer, a deposition structure, a dielectric layer and a second metal layer. The first metal layer is disposed on the substate and has a planarized surface. The deposition structure is disposed on the first metal layer, and at least a portion of the deposition structure extends into the planarized surface, wherein the first metal layer and the deposition structure have the same material. The dielectric layer is disposed on the deposition structure. The second metal layer is disposed on the dielectric layer.

Method for fabricating metal-insulator-metal capacitor

A metal-insulator-metal (MIM) capacitor includes a substrate, a first metal layer, a deposition structure, a dielectric layer and a second metal layer. The first metal layer is disposed on the substrate and has a planarized surface. The deposition structure is disposed on the first metal layer, and at least a portion of the deposition structure extends into the planarized surface, wherein the first metal layer and the deposition structure have the same material. The dielectric layer is disposed on the deposition structure. The second metal layer is disposed on the dielectric layer.

Metal-insulator-metal capacitor and method for fabricating the same

A wrist joint performance measuring device includes a base having a seat and two positioning arms on two sides of the seat. A switching device is pivotably mounted to the base. A forearm support is connected to the switching device. A measurement device includes a pivotal seat, a torque meter, a first handle, and a second handle. The pivotal seat is pivotably connected to the forearm support. The torque meter is mounted to the pivotal seat. The first handle or the second handle is connected to a force receiving end of the torque meter. The forearm support and the measurement device are movable by the switching device to one of the two positioning arms and are positioned by the one of the two positioning arms.

Wrist joint performance measuring device

A method for forming a through silicon via for signal and a shielding structure is provided. A substrate is provided and a region is defined on the substrate. A radio frequency (RF) circuit is formed in the region on the substrate. A through silicon trench (TST) and a through silicon via (TSV) are formed simultaneously, wherein the TST encompasses the region to serve as a shielding structure for the RF circuit. A metal interconnection system is formed on the substrate, wherein the metal interconnection system comprises a connection unit that electrically connects the TSV to the RF circuit to provide a voltage signal.

Method for forming semiconductor structure having through silicon via for signal and shielding structure

Growing community of inventors

Kaohsiung, Taiwan

Chun-Wei Kang