Taiwan Semiconductor Manufacturing Comp. Ltd.

Chun-Wei Chou

Keng-Ying Liao

Su-Yu Yeh

Po-Zen Chen

Tzu-Pin Lin

Po Hsun Chen

Tai-Chin Wu

A wafer treatment system is provided. The wafer treatment system includes a wafer treatment chamber defining a treatment area within which a wafer is treated. The wafer treatment system includes a gas injection system. The gas injection system includes a gas injector configured to inject a first gas, used for treatment of the wafer, into the treatment area. A first gas tube is configured to conduct the first gas at a first temperature to the gas injector. The gas injection system includes a heating enclosure enclosing the gas injector. A second gas tube is configured to conduct a heated gas to the heating enclosure to increase an enclosure temperature at the heating enclosure to a second enclosure temperature. A temperature of the first gas is increased in the gas injector from the first temperature to a second temperature due to the second enclosure temperature at the heating enclosure.

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Keelung, Taiwan

Chun-Wei Chou