Samsung Electronics Co., Ltd.

Chun-Um Kong

Hong-Suk Choi

Su-Ryun Lee

Hyung-Kyun Byun

Ohchul Kwon

Younwon Park

Young Joon Jang

Youngjoon Jang

Youn-Won Park

Kyu-Hyung Kim

Junki Kim

A storage device includes a nonvolatile memory device that includes a plurality of memory blocks, and a controller that uses some memory blocks of the plurality of memory blocks as a buffer area. Memory blocks storing invalid data from among the some memory blocks are invalid memory blocks, and the controller identifies memory blocks, of which an elapsed time after erase is greater than a reuse time, from among the invalid memory blocks as an available buffer size, and provides the available buffer size to an external host device.

Universal flash storage (UFS) device and computing device and computing device including storage UFS device for reporting buffer size based on reuse time after erase

A storage device includes a nonvolatile memory device including memory blocks divided into a first memory area and a second memory area; and a memory controller. In the case of programming specific attribute data, the memory controller determines a memory area in which the specific attribute data will be programmed according to a wear out ratio of the first memory area and a wear out ratio of the second memory area. The wear out ratio is a ratio of the current maximum erase count of memory blocks of a memory area with respect to the allowable maximum erase count of the memory area.

Storage device dynamically allocating program area and program method thereof

Storage devices including a memory device and methods of operating the storage devices are provided. The storage devices may include a controller which is configured to program first bit data and second bit data paired with the first bit data into a memory device. The first bit data may be less significant bit data than the second bit data. The controller may be configured to selectively perform or skip backup of the first bit data when programming the second bit data.

Storage devices including memory device and methods of operating the same

Growing community of inventors

Seoul, South Korea

Chun-Um Kong