United Microelectronics Corp.

Other

National Taipei University of Technology

Chun-Ting Yeh

Ming-Tse Lin

Chung-Hsing Kuo

Hui-Ling Chen

Sea-Fue Wang

Zhirui Sheng

Chien En Hsu

Feng-Yi Chang

Jiunn-Hsiung Liao

Chien-Ming Lai

Pei-Yu Chou

Ying-Chih Lin

Chun-Hung Chen

Chu-Fu Lin

Chih-Wen Feng

Hsi-Chuan Lu

Teng-Chuan Hu

Jyh-Cherng Yau

Yuh-Ruey Wang

Yun-Ruey Wang

Ching-Chin Chuang

A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.

Structure of semiconductor device

A semiconductor device, including a first semiconductor substrate and a second semiconductor substrate, is provided. A first bonding structure is located on the first semiconductor substrate and includes a first pad having an elongated shape. A second bonding structure is located on the second semiconductor substrate and includes a second pad having an elongated shape. The first semiconductor substrate is bonded to the second semiconductor substrate by bonding the first bonding structure and the second bonding structure. The first pad is bonded to the second pad, and an extension direction of the first pad is different from an extension direction of the second pad.

Semiconductor device including elongated bonding structure between the substrate

Structure of semiconductor device and method for bonding two substrates

A structure of semiconductor device is provided. The structure includes a first bonding pattern, formed on a first substrate. A first grating pattern is disposed on the first substrate, having a plurality of first bars extending along a first direction. A second bonding pattern is formed on a second substrate. A second grating pattern, disposed on the second substrate, having a plurality of second bars extending along the first direction. The first bonding pattern is bonded to the second bonding pattern. One of the first grating pattern and the second grating pattern is stacked over and overlapping at the first direction with another one of the first grating pattern and the second grating pattern. A first gap between adjacent two of the first bars is different from a second gap between adjacent two of the second bars.

A semiconductor structure includes a substrate having a frontside surface and a backside surface. A through-substrate via extends into the substrate from the frontside surface. The through-substrate via comprises a top surface. A metal cap covers the top surface of the through-substrate via. A plurality of cylindrical dielectric plugs is embedded in the metal cap. The cylindrical dielectric plugs are distributed only within a central area of the metal cap. The central area is not greater than a surface area of the top surface of the through-substrate via.

Semiconductor structure

A glass-ceramic composite encapsulation material composed of glass matrix materials of SiO, AlO, BaO and BO, and at least one glass filler selected from the group consisting of kaliophilite (KAlSiO), leucite (KAlSiO), magnesium oxide (MgO). The glass-ceramic composite encapsulation material according to the invention comprises a high temperature type glass matrix (softening point: 750-850&#xb0; C.) and a intermediate temperature type glass matrix (softening point: 650-750&#xb0; C.), and glass filler mixed therein, wherein said glass filler in the high temperature type glass matrix comprises 5% to 20% by volume of the total volume of said glass matrix and glass filler, and the glass filler in the intermediate temperature type glass matrix comprises 0% to 40% by volume of the total volume of said glass matrix and glass filler, and wherein said glass filler has an effect of adjusting the expansion coefficient.

Glass-ceramic composite encapsulation material

A thermally conductive silicone composition includes 25 to 50 volume % of a silicone, 30 to 60 volume % of a first heat conducting filler, and 20 to 40 volume % of a second heat conducting filler, and 1 to 2 volume % of a third heat conducting filler. The thermally conductive silicone composition has two heat conducting fillers with different sizes dispersed therein, thus the thermal impedance can be efficiently reduced.

Thermally conductive silicone composition

A method for controlling ADI-AEI CD difference ratios of openings having different sizes is provided. First, a first etching step using a patterned photoresist layer as a mask is performed to form a patterned Si-containing material layer and a polymer layer on sidewalls thereof. Next, a second etching step is performed with the patterned photoresist layer, the patterned Si-containing material layer and the polymer layer as masks to at least remove an exposed portion of a etching resistive layer to form a patterned etching resistive layer. A portion of a target material layer is removed by using the patterned etching resistive layer as an etching mask to form a first and a second openings in the target material layer. The method is characterized by controlling etching parameters of the first and second etching steps to obtain predetermined ADI-AEI CD difference ratios.

Method for controlling ADI-AEI CD difference ratio of openings having different sizes

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Taipei, Taiwan

Chun-Ting Yeh