Industrial Technology Research Institute

Lucent Technologies Inc.

Au Optronics Corporation

At+t Corp.

Alcatel-lucent USA Inc.

Other

Agere Systems Inc.

Agere Systems Guardian Corp.

Sipix Technology, Inc.

Chun-Ting Liu

Kuo-Hua Lee

Ruichen Liu

Yang Yang

Wei-En Fu

Rose Fasano Kopf

Wen-Li Wu

Bo-Ching He

Wen-Yung Yeh

Su-Tsai Lu

Chin-Der Wey

Hsuan-Yu Lin

Guo-Dung Chen

Hsin-Chu Chen

Wen-Hong Liu

Lay-Lay Chua

Chi-Mao Hung

Young-Kai Chen

Andreas Leven

Hsi-Hsuan Yen

Je-Ping Hu

Chih-Wei Wang

Chia-Hung Sun

Vincent Etienne Houtsma

Sheng-Feng Chung

Wei-Jer Sung

Chen-Jung Chen

Laylay Chua

Sheng-Hsun Wu

Chih-Ming Lai

Pradip Kumar Roy

Yu-Cheng Chen

Yi Ma

Yen-Ting Chen

Yi-Pai Huang

Yao-Jen Hsieh

Ming-Sheng Lai

Ting-Jui Chang

Min-Feng Chiang

Cheng-Han Tsao

Po-Yuan Liu

Chen-Kun Chen

Kuo-Hua Tseng

Chien-Shing Pai

Chao-Feng Sung

Jeng-Fang Wu

Steven J Hillenius

Philip W Diodato

Kin Ping Cheung

Bao-Shun Yau

Chang-Ying Chen

Yi-Chen Chiang

Ya-Yun Yu

Kun-Hua Tsai

Heng-Tien Lin

Shu-Yi Chang

Chun-Yu Liu

Hsu-Ping Tseng

Han-Yu Chang

Kua-Hua Lee

Yuan-Shan Chung

Chorng-Ping Chang

Po-Ching He

A method for determining parameters of nanostructures, wherein the method includes steps as follows: Firstly, an X-ray reflection intensity measurement curve of a nanostructure to be tested is obtained by radiating the nanostructure to be tested with X-ray. The X-ray reflection intensity measurement curve is compared with an X-ray reflection intensity standard curve to obtain a comparison result. Subsequently, at least one parameter existing in the nanostructure to be tested is determined according to the comparison result.

Method for determining parameters of three dimensional nanostructure and apparatus applying the same

This disclosure relates to an X-ray reflectometry apparatus and a method for measuring a three-dimensional nanostructure on a flat substrate. The X-ray reflectometry apparatus comprises an X-ray source, an X-ray reflector, a 2-dimensional X-ray detector, and a two-axis moving device. The X-ray source is for emitting X-ray. The X-ray reflector is configured for reflecting the X-ray onto a sample surface. The 2-dimensional X-ray detector is configured to collect a reflecting X-ray signal from the sample surface. The two-axis moving device is configured to control two-axis directions of the 2-dimensional X-ray detector to move on at least one of x-axis and z-axis with a formula concerning an incident angle of the X-ray with respect to the sample surface for collecting the reflecting X-ray signal.

X-ray reflectometry apparatus and method thereof for measuring three dimensional nanostructures on flat substrate

This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes. In one embodiment, the incident angle of the long-wavelength focused X-ray is ≥24°, and the sample area is ≤25 μm×25 μm.

This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes.

The present disclosure relates to a device and a method for measuring a thickness of an ultrathin film on a solid substrate. The thickness of the target ultrathin film is measured from the intensity of the fluorescence converted by the substrate and leaking and tunneling through the target ultrathin film at low detection angle. The fluorescence generated from the substrate has sufficient and stable high intensity, and therefore can provide fluorescence signal strong enough to make the measurement performed rapidly and precisely. The detection angle is small, and therefore the noise ratio is low, and efficiency of thickness measurement according to the method disclosed herein is high. The thickness measurement method can be applied into In-line product measurement without using standard sample, and therefore the thickness of the product can be measured rapidly and efficiently.

Device and method applicable for measuring ultrathin thickness of film on substrate

An illumination device includes a substrate, a light emitting structure, a sealant, and a laminating board is provided. The light emitting structure includes a first electrode layer, a light emitting layer and a second electrode layer stacked on the substrate sequentially. The sealant covers the light emitting structure. The laminating board is attached to the substrate. The sealant is located between the laminating board and the substrate. The laminating board includes a carrier body, a metal layer and a plurality of pads. The metal layer is exposed at a first surface of the carrier body, is in contact with the sealant and shields an area of the light emitting layer of the light emitting structure. The pads are exposed at the first surface of the carrier body and electrically connected to the first electrode layer and the second electrode layer. The metal layer is electrically isolated from the pads.

Illumination device and method of fabricating an illumination device

A mesh electrode, a sensing device and an electrode layer are provided, in which the sensing device includes the mesh electrode. The mesh electrode is formed by a plurality of grid lines intersecting and connected to each other. The grid line has a bottom surface and a cross-section, and the cross-section is perpendicular to the bottom surface and has at least one curved portion. The electrode layer includes a plurality of conducting lines. The conducting lines have at least three line widths or at least three spaces. An appearing probability of each line width may be identical in the electrode layer. An appearing probability of each space may be identical in the electrode layer. The conducting line has a bottom surface and a cross-section, and the cross-section is perpendicular to the bottom surface and has at least one curved portion.

Mesh electrode, sensing device, and electrode layer

In one embodiment, a conductive line structure includes a substrate and a plurality of conductive lines thereon. The substrate has a first area and a second area, and the two areas are separated by at least one borderline. The plurality of conductive lines are disposed at the first area and the second area of the substrate, respectively. The at least one borderline may be a straight line, and the conductive lines disposed at the second area are inclined relative to the at least one borderline. A sensing device using the conductive line structure is also provided.

Conductive line structure and sensing device using the same

A light-emitting assembly includes a first substrate, a first electrode layer, a light-emitting layer, a second electrode layer, a second substrate, a first conductive member and a second conductive member. The first electrode layer, the light-emitting layer and the second electrode layer are sequentially disposed on the first substrate. An area of the second electrode layer is entirely located within an area of the light emitting layer. The second electrode layer is located between the second substrate and the light-emitting layer. The first and second conductive members are disposed between the first and second substrates. The first electrode layer is electrically connected to a first circuit on the second substrate through the first conductive member. The second electrode layer is electrically connected to a second circuit on the second substrate through the second conductive member. The second conductive member is located within the area of the second electrode layer.

Light-emitting assembly

An organic light-emitting device includes a first substrate, a light-emitting structure layer, a first electrode layer, a second electrode layer, a second substrate, first conduction members, a second conduction member and protection structures. The light-emitting structure layer is disposed on the first substrate. The first electrode layer is disposed on the light-emitting structure layer and includes pad-like patterns. The second electrode layer is disposed between the light-emitting structure layer and the first substrate. The second substrate is adhered on the first electrode layer and includes a first circuit and a second circuit. The first circuit includes a continuous pattern and contact portions. The first conduction members are connected between the first circuit and the first electrode layer. The second conduction member is connected between the second circuit and the second electrode layer. The protection structures respectively form open circuits or close circuits between the contact portions and the continuous pattern.

Organic light-emitting device

A light emitting device including a substrate, a first electrode structure, an organic light emitting structure and a second electrode structure is provided. The first electrode structure includes a first transparent conductive layer, a patterned conductive layer and a second transparent conductive layer disposed on the substrate in sequence, so that the patterned conductive layer is interposed between the second transparent conductive layer and the first transparent conductive layer in a thickness direction of the substrate. The organic light emitting structure and the second electrode structure are disposed on the substrate, and the organic light emitting structure is located between the first electrode structure and the second electrode structure in the thickness direction of the substrate. An electrode structure and a manufacturing method thereof are also provided.

Light emitting device, electrode structure and manufacturing method thereof

A touch structure and a manufacturing method for the same are provided. The touch structure comprises first patterned electrodes, a second patterned electrode, a dielectric structure and a conductive bridge. The second patterned electrode is disposed between the first patterned electrodes, and separated from the first patterned electrodes. The dielectric structure is disposed on the first patterned electrodes and the second patterned electrode. The dielectric structure has a dielectric opening. The conductive bridge is disposed across the dielectric structure and extended in the dielectric opening. The first patterned electrodes are electrically connected to each other through the conductive bridge.

Touch structure and manufacturing method for the same

An electrophoretic display and a driving method thereof are provided. The electrophoretic display includes a display panel, a storage unit, a timing controller (TCON). The display panel has a plurality of sub-pixels. The storage unit stores a plurality sets of driving waveforms, wherein the lengths of driving waveforms in the sets of driving waveforms are different from each other. The TCON has an analysis module, couples to the display panel and the storage unit, and receives an image signal having a plurality of display data. The analysis module analyzes the display data to obtain a analysis result. The TCON selects one of the sets of driving waveforms according to the analysis result, and drives the sub-pixels according to the selected set of driving waveforms.

Electrophoretic display with changeable frame updating speed and driving method thereof

An exemplary display device includes multiple pixels, first through third gate lines and a data line. The pixels include first through third pixels. The first through third gate lines respectively are electrically coupled with the first through third pixels and for deciding whether to enable the first through third pixels. The first pixel is electrically coupled to the data line to receive a display data provided by the data line. The second pixel is electrically coupled to the first pixel to receive a display data provided by the data line through the first pixel. The third pixel is electrically coupled to the second pixel to receive a display data provided by the data line through both the first pixel and the second pixel. A display driving method adapted to be implemented in the display device also is provided.

Display device and display driving method

A liquid crystal display includes a source driver, a gate driver, a plurality of pixel units, a plurality of detecting circuits, and a decision unit. Each pixel unit includes a switch transistor and a liquid crystal capacitor. When turned on by a scan signal generated by the gate driver, the switch transistor conducts a data signal voltage generated by the source driver to the liquid crystal capacitor, to adjust alignment of liquid crystal molecules. Each detecting circuit is electrically connected to one pixel unit, and includes a first transistor, a second transistor, a third transistor and a sensor unit. The first transistor conducts a constant voltage to the sensor unit when turned on, and generates a dynamic voltage when turned off. Based on the dynamic voltage, the second transistor generates a dynamic current. The third transistor conducts the dynamic current to the decision unit when turned on. The decision unit determines the position of one detecting circuit by comparing the dynamic currents output by the plurality of detecting circuits.

Touch-control liquid crystal display background of the invention

Growing community of inventors

Hsinchu County, Taiwan

Chun-Ting Liu