Samsung Electronics Co., Ltd.

Chun-Suk Suh

Yoo-Sang Hwang

Jeong-Sic Jeon

Jong-Seo Hong

Sang-Wook Kim

Sung-Woo Lee

Seong-woon Choi

Seong-Bo Shim

Eun-Mi Lee

Jung-hoon Ser

Moon-gyu Jeong

A method of forming a photomask includes providing a layout of design patterns, setting an optical proximity correction (OPC) with respect to the layout of design patterns, and forming a layout of correction patterns with respect to the layout of design patterns by using the set OPC. The method also includes collecting verification data about the layout of correction patterns by using a layout of contour patterns based on the layout of correction patterns, and verifying whether the layout of design patterns and the layout of correction patterns are substantially identical to each other by using the verification data.

Method of forming photomask by collecting verification data based on a layout of contour patterns

A capacitor of a semiconductor memory device, and methods of forming the same, are disclosed. A pad interlayer insulating layer is disposed on a semiconductor substrate of an active region. Landing pads and a central landing pad are disposed in peripheral portions and a central portion of the active region, respectively, to penetrate the pad interlayer insulating layer. The upper surface of the central landing pad has a different area from the upper surfaces of the landing pads. A buried interlayer insulating layer is formed on the pad interlayer insulating layer to cover the landing pads and the central landing pad. Buried plugs are formed on the respective landing pads to penetrate the buried interlayer insulating layer. Lower electrodes are formed on the buried plugs.

Methods of forming capacitors for semiconductor memory devices

A method of manufacturing a semiconductor device includes dividing a design pattern layout into a repetitive pattern part and a non-repetitive pattern part, obtaining an optical proximity correction (OPC) bias from an extracted portion, the extracted portion being a partial portion of the repetitive pattern part, applying the OPC bias obtained from the extracted portion equally to the extracted portion and other portions of the repetitive pattern part so as to form a first corrected layout in which corrected layouts of the other portions are the same as that of the extracted portion, and forming a photomask in all portions of the repetitive pattern part according to the first corrected layout.

Method of manufacturing semiconductor device by using uniform optical proximity correction

Capacitors for semiconductor memory devices

Growing community of inventors

Yongin-si, South Korea

Chun-Suk Suh