Skyworks Solutions, Inc.

Skyworks Global Pte. Ltd.

Skyworks Filter Solutions Japan Co., Ltd.

Chun Sing Lam

Jiansong Liu

Kwang Jae Shin

Jie Zou

Yuhao Liu

Chih-Ming Lin

Gong Bin Tang

Benjamin Paul Abbott

Rei Goto

Joshua James Caron

Jae Hyung Lee

Toru Jibu

Hiroyuki Nakamura

Tetsuya Tsurunari

Yiliu Wang

Li Chen

Zhiqiang Bi

Peter Loucks

Methods related to gradient raised frames in film bulk acoustic resonators. According to certain aspects, a method for fabricating a film bulk acoustic resonator device can include: forming a first metal layer over a substrate; forming a piezoelectric layer; forming a second metal layer, the piezoelectric layer positioned between the first and second metal layers; and forming a gradient raised frame implemented relative to one of the first and second metal layers and configured to improve reflection of lateral mode waves and to reduce conversion of main mode waves into lateral mode waves.

Methods related to gradient raised frames in film bulk acoustic resonators

Aspects of this disclosure relate to an acoustic wave filter configured to filter a radio frequency signal and a loop circuit coupled to the acoustic wave filter. The loop circuit is configured to generate an anti-phase signal to a target signal at a particular frequency. The loop circuit includes a Lamb wave element. Related radio frequency modules and wireless communication devices are disclosed.

Lamb wave loop circuit for acoustic wave filter

Aspects of this disclosure relate to a bulk acoustic wave device with a floating raised frame structure. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a floating raised frame structure positioned on a same side of the piezoelectric layer as the first electrode and spaced apart from the first electrode. The floating raised frame structure is at a floating potential. The bulk acoustic wave device can suppress a raised frame mode. Related methods, filters, multiplexers, radio frequency front ends, radio frequency modules, and wireless communication devices are disclosed.

Multiplexer with floating raised frame bulk acoustic wave device

Gradient raised frames in film bulk acoustic resonators. In some embodiments, a film bulk acoustic resonator device can include a substrate, first and second metal layers implemented over the substrate, a piezoelectric layer between the first and second metal layers, and a gradient raised frame implemented relative to one of the first and second metal layers and configured to improve reflection of lateral mode waves and to reduce conversion of main mode waves into lateral mode waves.

Gradient raised frames n film bulk acoustic resonators

An acoustic wave device with a bent section is disclosed. The acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer. The bent section is arranged to create a curvature in a waveguide of the acoustic wave device to suppress a transverse spurious mode of the acoustic wave device.

Acoustic wave device with transverse spurious mode suppression

Piston mode Lamb wave resonators are disclosed. A piston mode Lamb wave resonator can include a piezoelectric layer, such as an aluminum nitride layer, and an interdigital transducer on the piezoelectric layer. The piston mode Lamb wave resonator has an active region and a border region, in which the border region has a velocity with a lower magnitude than a velocity of the active region. The border region can suppress a transverse mode.

Piston mode lamb wave resonators

A film bulk acoustic wave resonator (FBAR) comprises a recessed frame region including an undulating perimeter.

Film bulk acoustic resonator including recessed frame with scattering sides

Piston mode Lamb wave resonators

Bulk acoustic wave device with floating raised frame

Aspects of this disclosure relate to an acoustic wave device that includes a bulk acoustic wave resonator and a Lamb wave element implemented on a common substrate. In some instances, the bulk acoustic wave resonator can be a film bulk acoustic wave resonator. Related radio frequency modules and wireless communication devices are disclosed.

Lamb wave element and bulk acoustic wave resonator on common substrate

Aspects of this disclosure relate to an elastic wave device. The elastic wave device includes a sub-wavelength thick piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and a high velocity layer configured to inhibit an elastic wave from leaking from the piezoelectric layer at anti-resonance.

Elastic wave device with sub-wavelength thick piezoelectric layer and high velocity layer

Phase shift circuits including two or more slanted-finger IDT electrodes, and filters, duplexers, or other electronic devices incorporating same. In one example a filter includes a main filter circuit connected between an input and an output and having a first phase characteristic, and a phase shift circuit connected in parallel with the main filter circuit, the phase shift circuit including first and second capacitor elements and a pair of acoustic wave elements connected in series between the first and second capacitor elements, the pair of acoustic wave elements including a pair of slanted-finger IDT electrodes disposed apart from each other on a single acoustic wave path along which acoustic waves propagate through the acoustic wave elements, the phase shift circuit having a second phase characteristic opposite to the first phase characteristic in an attenuation band that corresponds to at least a portion of a stopband of the main filter circuit.

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San Jose, CA, United States of America

Chun Sing Lam