Nan Ya Technology Corporation

Chun-Shun Huang

Jui-Hsiu Jao

Tsang-Po Yang

Yu-Ping Chen

Wei-Li Lai

A method of manufacturing semiconductor testing structure includes providing a substrate; forming a first metal layer on the substrate, wherein the first metal layer comprises a plurality of fingers extending along a first direction; forming a dielectric structure on the first metal layer; and forming a plurality of second metal layers on the dielectric structure.

Method for manufacturing a semiconductor structure for detecting vertical electrical leakage

A method for manufacturing semiconductor device structure includes providing a substrate having a surface; forming a first gate structure on the surface; forming a second gate structure on the surface; forming a first well region in the substrate and between the first gate structure and the second gate structure; forming a conductive contact within a trench between the first gate structure and the second gate structure; forming a first structure in the first well region, wherein the first structure tapers away from a bottom portion of the conductive contact.

Method for manufacturing semiconductor device structure

A semiconductor device structure includes a substrate, a first gate structure, a second gate structure, a first well region, and a first structure. The substrate has a first surface and a second surface opposite to the first surface. The first gate structure is disposed on the first surface. The second gate structure is disposed on the first surface. The first well region is in the substrate and between the first gate structure and the second gate structure. The first structure is disposed in the first well region. A shape of the first structure has an acute angle.

Semiconductor device structure

The present disclosure a method for manufacturing a metal-oxide-semiconductor (MOS) transistor device. The method includes steps of providing a substrate; forming a gate electrode over the substrate; forming a source region and a drain region in the substrate; depositing an isolating layer over the substrate and the gate electrode; forming a plurality of contact holes in the isolating layer to expose the gate electrode, the source region, and the drain region; forming a plurality of metal contacts in the gate electrode, the source region, and the drain region; depositing a contact liner in the contact holes; and depositing a conductive material in the contact holes, wherein the conductive material is surrounded by the contact liner.

Method for manufacturing a semiconductor device

The present disclosure provides a method for preparing a semiconductor device. The semiconductor device includes a substrate, a first region, a second region, a third region, a fourth region, a fifth region and a sixth region. The first type region is disposed on the substrate and has a ring structure. The second type region is disposed on the substrate and disposed in the center of the first type region. A plurality of second well regions are formed in the first region, the second region, the fourth region, the fifth region and the sixth region. A plurality of second well regions in the first region, the second region, the fourth region, the fifth region and the sixth region. The first well region, the second well region, the first type region and the second type region are formed by ion implantation.

Method for preparing semiconductor device

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a gate electrode, a drain region, a source region, an isolating layer, a plurality of metal contacts, a plurality of conductive plugs, and a contact liner. The gate electrode is disposed on the substrate. The drain region and the source region are disposed in the substrate and on opposite sides of the gate electrode. The isolating layer is disposed over the substrate and the gate electrode. The metal contacts are disposed in the gate electrode, the source region, and the drain region. The conductive plugs are disposed in the isolating layer and electrically coupled to the metal contacts. The contact liner surrounds the conductive plugs. The present disclosure further provides a method for manufacturing the semiconductor device.

Semiconductor device and method for manufacturing the same

A method includes forming a transistor over a substrate; forming a conductive structure over the substrate, such that a first end of the conductive structure is electrically coupled to a gate of the transistor, and a second end of the conductive structure is electrically coupled to the substrate; applying biases to the gate of the transistor and source/drain structures of the transistor; determining whether the first end and the second end of the conductive structure are electrically connected; generating, based on the determination, a first result indicating that the first end and the second end of the conductive structure are electrically connected; and qualifiying the conductive structure as an antenna in response to the first result.

Semiconductor structure and manufacturing method thereof

The present disclosure provides a semiconductor device and a method for preparing the same. The semiconductor device includes a substrate, a first type region, and a second type region. The first type region is disposed on the substrate and has a ring structure. The second type region is disposed on the substrate and disposed in the center of the first type region. The second type region has a square shape and includes a plurality of corners.

Semiconductor device and method for preparing the same

A method includes forming a transistor over a substrate; forming a conductive structure over the substrate, such that a first end of the conductive structure is electrically coupled to a gate of the transistor, and a second end of the conductive structure is electrically coupled to the substrate; applying biases to the gate of the transistor and source/drain structures of the transistor; determining whether the first end and the second end of the conductive structure are electrically connected; generating, based on the determination, a first result indicating that the first end and the second end of the conductive structure are electrically connected; and qualifying the conductive structure as an antenna in response to the first result.

Growing community of inventors

Taoyuan, Taiwan

Chun-Shun Huang