Hynix Semiconductor Inc.

Skhynix Inc.

Industry-University Cooperation Foundation Hanyang University

Chun-Seok Jeong

Jae-Jin Lee

Kee-Teok Park

Chang-Sik Yoo

Kang-Seol Lee

Hyun-Sung Lee

Young-Hoon Kim

Yong-Ki Kim

kang-Seol Lee

Beom-Ju Shin

Seok-Cheol Yoon

Ki-Ho Kim

Soo-Young Jang

Myeong-Jae Park

Kae-Dal Kwack

Young-Suk Seo

Jong-Man Im

Woo-Sik Jeong

Joong-Sik Kih

Jae-Woong Choi

Myoung-Jun Chai

Jung-June Park

A stacked memory device includes: a plurality of semiconductor chips that are stacked and transfer signals through a plurality of through-electrodes, wherein at least one of the semiconductor chips comprises: a re-timing circuit suitable for receiving input signals and first and second clocks, performing a re-timing operation of latching the input signals based on the second clock to output re-timed signals, and reflecting a delay time of the re-timing operation into the first clock to output a replica clock; and a transfer circuit suitable for transferring the re-timed signals to the through-electrodes based on the replica clock.

Stacked memory device and memory system including the same

A base chip including first to Nth delay units coupled in series, where N is a natural number equal to or larger than 2, wherein when the number of stacked chips over the base chip is 1, the base chip is suitable for delaying a refresh signal, and generating first to Xth delayed refresh signals using the first to Xth delay units among the first to Nth delay units, where X is a natural number having a relation of N&#x3e;X&#x2265;1, and when the number of stacked chips over the base chip is 2, the base chip is suitable for delaying the refresh signal, and generating first to Yth delayed refresh signals using the first to Yth delay units among the first to Nth delay units, where Y is a natural number having a relation of N&#x2265;Y&#x3e;X.

Base chip and semiconductor package including the same

A signal shifting circuit may include a bank selection signal generation unit suitable for generating a bank selection signal synchronized with a first clock in response to a bank address and an internal write signal; and a shifting device suitable for generating a shifted bank selection signal by shifting the bank selection signal by a number of times according to latency information and for advancing a phase of the shifted bank selection signal whenever shifting the bank selection signal once or more so that the shifted bank selection signal is synchronized with a second clock having a phase leading a phase of the first clock.

Signal shifting circuit, base chip, and semiconductor system including the same

A semiconductor integrated circuit includes a plurality of semiconductor chips stacked in a multi-layer structure; a correction circuit in each semiconductor chip configured to reflect a delay time corresponding to the position of the chip in the stack into an input signal to output to each semiconductor chip; and a plurality of through-chip vias formed vertically through each of the semiconductor chips and configured to transmit the input signal to the semiconductor chip.

Signal transmission method of semiconductor integrated circuit for transmitting signal to a plurality of stacked semiconductor chips

Provided is a stacked memory device including a base die and a plurality of core dies. The base die may include: a weak cell address storage unit for storing weak cell addresses; a serialization unit for selecting at least one of the weak cell addresses as a target weak cell address, converting the selected target weak cell address into a serial weak cell address, and outputting a strobe signal synchronized with the serial weak cell address; a deserialization unit for storing the serial weak cell address based on the strobe signal, and converting the stored address into a parallel weak cell address based on a refresh end signal; and a refresh control unit for selecting the parallel weak cell address or a refresh address generated based on a refresh signal, and outputting a target address.

Stacked memory device having serial to parallel address conversion, refresh control unit, and pipe control unit

A memory device includes a memory array suitable for storing write data of the memory device and providing the stored data as read data of the memory device, a programmable storage unit suitable for storing information for the memory device, a command decoder suitable for storing decoding one or more command signals, and generating a write command for writing the write data, a read command for outputting the read data, and an information read command for outputting information stored in the programmable storage unit, a control unit suitable for controlling the information stored in the programmable storage unit to be sequentially read in response to activation of the information read command, and an output unit suitable for outputting the read information to an outside of the memory device in response to the information read command.

Semiconductor device, memory device, and system including the same

A semiconductor memory device includes a row input section suitable for receiving a first row signal including a first row command and a first row address, corresponding to an active command, during a test operation of the active command, a column input section suitable for receiving a second row signal including a second row address corresponding to the active command during the test operation of the active command, and a signal control section suitable for generating an internal row signal for an operation of the active command by transforming the first row signal and the second row signal outputted from the row input section and the column input section.

Semiconductor memory device and method of testing the same

An integrated circuit may include a nonvolatile memory circuit, a data bus suitable for transferring data outputted from the nonvolatile memory circuit, a shift register suitable for sequentially activating first to Nselection signals whenever a clock is activated, and first to Nlatch circuits corresponding to the first to Nselection signals, respectively, and suitable for storing data of the data bus in response to activation of one or more of the first to Nselection signals.

Integrated circuit and memory device

A phase detector includes a phase comparing circuit configured to detect and output a phase difference between a first clock signal and a second clock signal, a latch circuit configured to latch an output signal of the phase comparing circuit and output a phase detection signal, and an initial voltage control circuit configured to control an initial voltage of an input terminal of the latch circuit according to a control signal.

Phase detector, phase-frequency detector, and digital phase locked loop

A multi-chip package system includes a signal transmission line commonly coupled to a plurality of semiconductor chips to transfer data to/from the semiconductor chips from/to outside; and a termination controller suitable for detecting a loading value of the signal transmission line and controlling a termination operation on the signal transmission line based on the loading value.

Multi-chip package system

A semiconductor device includes a plurality of stacked chips, a reference through silicon via (TSV) set passing through the plurality of stacked chips, a plurality of TSVs passing through the plurality of stacked chips, a reference delay information generation unit suitable for generating a reference delay information indicating an amount of delay of the reference TSV set and a determination unit suitable for determining abnormality of the plurality of TSVs by comparing a first test signal with each of a plurality of second test signals, wherein the first test signal is an initial test signal delayed by an amount of delay corresponding to the reference delay information, and wherein each of the plurality of second test signals is the initial test signal delayed by corresponding one of the plurality of TSVs.

Semiconductor device and operating method of semiconductor device

A semiconductor memory device includes an operation control block suitable for controlling an entrance/escape to/from a test public mode and a test application mode in response to a first preset command and an address signal that is inputted through an address pad, a test normal input block suitable for receiving the address signal as a test operation signal in response to the first preset command in the test application mode, a test public input block suitable for receiving a data signal, which is inputted through a data pad as the test operation signal in response to a second preset command in the test public mode, and an internal circuit suitable for performing a preset test operation in response to the test operation signal in the test application mode.

Semiconductor memory device and method for operating the same

An on die thermal sensor (ODTS) of a semiconductor memory device includes a high voltage generating unit for generating a high voltage having a voltage level higher than that of a power supply voltage of the semiconductor memory device; and a thermal information output unit for sensing and outputting a temperature as a thermal information code, wherein the thermal information output unit uses the high voltage as its driving voltage.

On die thermal sensor of semiconductor memory device

A signal transmission circ it includes a main driving unit configured to drive a first signal transmission One in response to an input signal and output a first driven signal, an emphasis driving unit configured to perform an emphasis operation on the first driven signal and output an emphasized signal, and a crosstalk control unit configured to perform an equalizing operation on the emphasized signal.

Signal transmission circuit

A semiconductor memory system configured to exchange signals through channels may include a memory control device configured to have a plurality of channels, a plurality of memory devices configured to be connected to each of the plurality of channels, wherein the plurality of channels share at least one of the plurality of memory devices.

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Kyoungki-do, South Korea

Chun-Seok Jeong