Fitipower Integrated Technology, Inc.

Chun-Ping Yang

Da-Pong Zhang

A capacitor for a semiconductor device includes a bottom electrode plate, an insulating layer formed on the bottom electrode plate, and a top electrode plate formed on the insulating layer. The bottom plate includes a capacitor well and at least one diffused region formed on the capacitor well. A doping concentration of the at least one diffused region is higher than a doping concentration of the capacitor well, the capacitor well comprising a first well.

Capacitor and semiconductor device using same

An exemplary display device includes a transparent substrate and a semiconductor device bonded to the transparent substrate. The transparent substrate includes a first alignment mark. The semiconductor device includes a substrate and a second alignment mark positioned on the substrate. The second alignment mark includes a first pattern structure positioned on the substrate and a second pattern structure positioned on the first pattern structure. The first pattern structure includes a plurality of first non-transparent marks. The second pattern structure includes a second pattern surrounded by the first non-transparent marks. The second pattern is an alignable shape that corresponds to a shape of the first alignment mark on the transparent substrate.

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Hsinchu, Taiwan

Chun-Ping Yang