Mosel Vitelic Corporation

Chun-Pey Cho

Yi-Fu Chung

Tsai-Sen Lin

Jen-Chieh Chang

Chou-Shin Jou

Chuan-Yi Wang

Huei-Ping Hsieh

Embodiments of the present invention relate to a method of making an IC capacitor. In one embodiment, the method comprises providing a substrate, forming a polycide layer on the substrate, and forming an insulating amorphous silicon layer on the polycide layer. The insulating amorphous silicon layer serves as an anti-reflection layer. The method further comprises implanting n-type ions into the insulating amorphous silicon layer to transform the insulating amorphous silicon layer into a conductive amorphous silicon layer, and patterning the polycide layer and the conductive amorphous silicon layer to form a bottom electrode on the substrate. A dielectric layer is formed on the bottom electrode and the substrate, and a conductor layer is formed on the dielectric layer. The conductor layer is patterned to form a top electrode on the dielectric layer.

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Hsinchu, Taiwan

Chun-Pey Cho