United Semiconductor Corp.

Chun-Ming Wu

Chih-Hung Lin

Alex Hsieh

A method of fabricating flash erasable programmable read only memory. A substrate having an isolation structure is provided. A tunnel oxide layer and a floating gate layer are formed in sequence over substrate and are patterned. An ion implantation is performed and a first doped region is formed in the substrate. An oxidation step is performed to form a first oxide layer over the substrate. A nitride/oxide layer and a control gate layer are formed in sequence over the substrate. The control gate layer, the nitride/oxide layer, the first oxide layer, and the floating gate layer are patterned until the substrate is exposed. An ion implantation step is performed to form a common source region and a drain region in the substrate. Spacers are formed over the sidewalls of the control gate layer, the nitride/oxide layer, the first oxide layer, and the floating gate layer. A self-aligned silicide step is performed to form silicide layers over the control gate layer, the common source region, and the drain region.

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Taipei Hsien, Taiwan

Chun-Ming Wu