Macronix International Co., Ltd.

Chun-Ming Chiou

Cheng-Chi Lin

Yu-Jui Chang

A semiconductor device having a fast recovery diode (FRD) is provided. The semiconductor device includes a substrate, a first well region disposed in the substrate, a base region disposed in the first well region, a first impurity region of a first conductivity type disposed in the base region, a second impurity region of a second conductivity type disposed in the first well region and separated from the base region, a first electrode electrically connected to the base region and the first impurity region, and a second electrode electrically connected to the second impurity region.

Semiconductor device and method of forming the same

A semiconductor device includes a substrate; a well region of a first-conductivity-type, disposed in the substrate; a first impurity region of a first-conductivity-type disposed in the well region; a second impurity region of the second-conductivity-type disposed in the well region, the second-conductivity-type being opposite to the first-conductivity-type; a third impurity region disposed in the well region, a portion of the first impurity region overlapping a first portion of the third impurity region, a portion of the second impurity region overlapping a second portion of the third impurity region, and a third portion of the third impurity region being disposed between the first impurity region and the second impurity region; and a fourth impurity region and a barrier layer disposed in the substrate, the fourth impurity region and the barrier layer enclosing the well region from around and below, respectively.

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Hsinchu, Taiwan

Chun-Ming Chiou