Interface Optoelectronics (shenzhen) Co., Ltd.

General Interface Solution Limited

Interface Technology (chengdu) Co., Ltd.

Industrial Technology Research Institute

United Microelectronics Corp.

Ememory Technology Inc.

Powerflash Technology Corporation

Chun-Ming Chen

Sung-Ho Liu

Min-Kai Lee

Ying-Hui Yang

Ping-Yang Chen

Tzu-Hsiang Lin

Chien-Jung Huang

Chun-Ta Chen

Hsien-Ying Chou

Yu-Chung Lin

Chih-Peng Chang

Shin-Kuang Lin

Jie-Ting Tseng

Hsuan-Man Chang

Chun-Ping Jen

Lung-Chih Wang

Ying-Chieh Chiang

Chun-Jen Gu

Jaw-Jyh Tseng

Yao-Yi Huang

Chieh-Ting Tseng

Chang-Fu Hsia

Sheng-An Yang

Hsiao-Chien Chen

Yuan-Chi Ho

Hui-Ta Cheng

Chun-Lin Tseng

Chin-Hsing Kao

Tien-Chung Tso

Chung-Ming Huang

Che-Ching Yang

A laser cleaning apparatus and a laser cleaning method are furnished, for switching the wavelengths of laser beams furnished by a single laser module using a wavelength switching module and cleaning a test piece using the laser beams having wavelengths and energy suitable for manufacturing needs. The laser cleaning method includes: creating a laser beam; switching the wavelength output by the laser based on process requirements; propagating the laser beam via an optical path propagating module for laser cleaning the test piece; and removing debris. A transfer platform allows movements of the laser beams with respect to the test piece to achieve cleaning of the entire test piece. A control module controls the wavelength switching unit, the laser beam regulating module, and the transfer platform. Total laser cleaning with improved laser cleaning quality is achieved by using these laser beams with the appropriate wavelengths and energy.

Laser cleaning apparatus and laser cleaning method

An electronic signing authorization method includes converting a signing request submitted by an end user into a predetermined format, verifying an identity of an authorizing user of an authorization layer according to a predetermined verification process, accepting input data of the authorizing user of the authorization layer when the identity of the authorizing user of the authorization layer is verified, and outputting an authorization command according to the input data when the input data includes authorization data. The predetermined format includes at least one of a text format, an audio format, or a video format. The authorization command corresponds to rejecting the signing request, not authorizing the signing request, or authorizing the signing request.

Electronic signing authorization system

A touch panel includes a substrate, a plurality of first electrodes, a plurality of first bridge portions, and a plurality of second electrodes on the substrate. A plurality of connecting pads is on a side of the second electrodes away from the substrate. The connecting pads are made of a non-transparent conductive material. An insulating layer is on the substrate and covers the first electrodes, the first bridge portions, and the second electrodes. The insulating layer defines a plurality of through holes. Each connecting pad is exposed from the insulating layer by one through hole. A plurality of second bridge portions is on a side of the insulating layer away from the substrate. Each of the second bridge portions extends into adjacent two through holes to electrically couple adjacent two second electrodes.

Touch panel and method for making same

A manufacturing method of a single type touch panel structure includes steps as follows. A transparent metal oxide layer is configured on a substrate. The transparent metal oxide layer is patterned to form a first electrode pattern on the substrate. A transferable transparent conductive film is thermally laminated onto the first electrode pattern so that a photo sensitive layer is sandwiched between the transparent metal oxide layer and a transparent conductive coating layer. The transferable transparent conductive film is patterned for mutually forming a second electrode pattern on the transparent conductive coating layer and one surface of the photo sensitive layer adjoining the transparent conductive coating layer.

Single type touch panel structure and manufacturing method of the same

A touch panel embedded in an electronic device defines a display region and a non-display region. The touch panel includes a cover and a touch sensing layer bonded on the cover. The touch sensing layer includes a substrate, a touch sensor disposed on the substrate in the display region, a peripheral circuit structure disposed on the substrate in the non-display region, and a decoration layer. The peripheral circuit structure is electrically connected with the touch sensor for receiving signals from the touch sensor. The decoration layer is disposed in the touch sensing layer.

Touch panel, electronic device with same, and method for fabricating same

The present disclosure provides a touch panel structure, including a display device, a dielectric layer, a first sensing circuit, a second sensing circuit and a shielding layer. The dielectric layer is disposed on the display device. The first sensing circuit includes a plurality of first sensing electrodes and a plurality of conducting bridges, wherein the first sensing electrodes are disposed on the dielectric layer, and the conducting bridges are disposed between the dielectric layer and the display device. Adjacent ones of the first sensing electrodes are electrically connected with each other through one of the conducting bridges. The second sensing circuit includes a plurality of second sensing electrodes, which are disposed on the dielectric layer. The second sensing circuit is insulated from and crosses the first sensing circuit. The shielding layer is disposed between the dielectric layer and the display device and coplanar with the conducting bridges.

Touch panel structure having a shielding layer and manufacturing method thereof

A touch sensing structure includes a substrate, a first electrical conductive electrode, a second electrical conductive electrode, an insulating layer and a bridge electrode. The first electrical conductive electrode includes a plurality of first regions covering the surface of the substrate and the first regions are interconnected by a connection electrode. The second electrical conductive electrode includes a plurality of second regions covering the surface of the substrate. The insulating layer covers the first and second electrical conductive electrodes and the connection electrode. The bridge electrode goes beyond the connection electrode to connect immediately-adjacent two of the second regions, and the bridge electrode pass through two through holes of the insulating layer to connect immediately-adjacent two of the second regions. An included angle between the boundary edge of each of the two through holes and the second contour edge of the second electrical conductive electrode is less than 10 degrees.

Touch sensing structure for display panel with low impedance bridge structure

A scrap removal device for a laser processing device includes a gas deflector having an optical channel; a looped gas channel; and a looped gas outlet. The looped gas outlet is connected to the looped gas channel, the optical channel is configured for a laser beam to transmit through, the looped gas channel surrounds the optical channel, and a section of the looped gas channel close to the looped gas outlet is inclined. The scrap removal device further includes a gas source furnished on the gas deflector and in communication with the looped gas channel for providing a gas flow to flow into the looped gas channel. The gas flow is joined with the laser beam transmitting along a looped processing path when flowing out of the gas deflector through the looped gas channel and the looped gas outlet.

Scrap removal device for a laser processing device

A method for manufacturing a germanium (Ge) epitaxial layer is provided. First, a substrate is provided. Then, a first deposition process is performed to deposit a first Ge epitaxial film on the substrate. Next, a first annealing process is performed on the first Ge epitaxial film. Following that, a second deposition process is performed to directly deposit a second Ge epitaxial film on the first Ge epitaxial film. Thereafter, a second annealing process is performed on the second Ge epitaxial film, wherein the Ge epitaxial layer includes the first Ge epitaxial film and the second Ge epitaxial film, and a thickness of the Ge epitaxial layer is greater than 0.5 microns.

Method for manufacturing germanium epitaxial layer and method for manufacturing device using the same

A voltage-stacked system includes a first voltage source, at least one second voltage source, a master monitoring circuit and at least one slave monitoring circuit. The first voltage source and the at least one second voltage source are coupled in series. The master monitoring circuit is coupled to the first voltage source, and arranged for monitoring and controlling the first voltage source and transmitting a monitoring signal. The at least one slave monitoring circuit is respectively coupled to the at least one second voltage source and the master monitoring circuit for monitoring and controlling the at least one second voltage source, and accordingly sending a response signal to the master monitoring circuit.

Voltage-stacked system for managing stacked voltage sources by using multiple monitoring circuits

A method and a system of detecting a tilt angle of an object surface and a method and a system of compensating the same are provided. The detecting method includes the following steps. Light beams are projected by a light source device to the object surface. An image of the object surface is captured so as to obtain light spots on the object surface. A focus program is executed by adjusting a vertical distance between the light source device and the object surface, so as to gather the light spots in a focal point on the object surface. The vertical distance is adjusted, and a correction angle between the light beams and the object surface is calculated according to the light spots.

Method and system of detecting tilt angle of object surface and method and system of compensating the same

The present invention provides an apparatus and a system for improving depth of focus (DOF), wherein an optical lens for optical processing is actuated to vibrate whereby the DOF of the optical processing is increased due to the variation of focal point. In the embodiment of the present invention, an actuator is coupled to the optical lens for providing vibration energy wherein the optical lens is actuated by the vibration energy so as to vibrate on an optical axis thereof so as to increase the DOF during the optical processing, thereby improving the quality and efficiency of optical processing.

Apparatus and system for improving depth of focus

A smart battery device includes an adapter, a switch electrically connected to the adapter, a battery pack electrically connected the switch, a sense resistor electrically connected to the battery pack and the adapter, an analog preprocessing circuit electrically connected to the battery pack and the sense resistor for digitizing analog signals measured at the battery pack and the sense resistor to form digital signals, and an adaptive control circuit electrically connected to the analog preprocessing circuit for receiving the digital signals, and electrically connected to the switch for selectively turning the switch on or off according to the digital signals.

Method of estimating battery recharge time and related device

A metal oxide semiconductor device comprising a substrate, at least an isolation structure, a deep N-type well, a P-type well, a gate, a plurality of N-type extension regions, an N-type drain region, an N-type source region and a P-type doped region is provided. The N-type extension regions are disposed in the substrate between the isolation structures and either side of the gate, while the N-type drain region and the N-type source region are respectively disposed in the N-type extension regions at both sides of the gate. The P-type well surrounds the N-type extension regions, and the P-type doped region is disposed in the P-type well of the substrate and is isolated from the N-type source region by the isolation structure.

Growing community of inventors

Hsinchu, Taiwan

Chun-Ming Chen