United Microelectronics Corp.

Chun-Lung Chang

Chien-Hung Chen

Tzu-Ping Chen

Tien-Fan Ou

Chih-Haw Lee

Wei-Shiang Huang

Kuan-Yi Tseng

The present invention provides a non-volatile memory device, including a source region and a drain region, a channel region, a floating gate, an enhance hot carrier (hole or electron) injection gate and an erasing gate. The floating gate is disposed on the channel region and the source region and a first dielectric layer is disposed therebetween. The enhance hot carrier injection gate is disposed on the floating gate and the substrate wherein the enhance hot carrier injection gate has an L-shape cross-section. A second dielectric layer is disposed between the enhance hot carrier injection gate and the floating gate, and a fourth dielectric layer is disposed between the enhance hot carrier injection gate and the substrate. The erasing gate is disposed on the drain region. A third dielectric layer is disposed between the erasing gate and the substrate.

Non-volatile memory device and operation method thereof

A gate structure is provided. The gate structure includes a substrate, a gate disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate, wherein the gate dielectric layer is in the shape of a barbell. The barbell has a thin center connecting to two bulging ends. Part of the bulging ends extends into the gate and the substrate.

Semiconductor structure and a fabricating method thereof

Growing community of inventors

Yilan County, Taiwan

Chun-Lung Chang