Epistar Corporation

Realtek Semiconductor Inc.

Tsinghua University

Chun-Kai Wang

Jui-Yi Chu

Yu-Pin Hsu

Schang-Jing Hon

Hsin-Hsien Wu

Cheng-Ta Kuo

Wei-Yu Yen

Min-Hsun Hsieh

Yi-Chieh Lin

Ming-Chi Hsu

Hsin-Ying Wang

Chien-Kai Chung

Wei-Chih Peng

Yen-Chih Chen

Mingsian R Bai

Mingrui Li

Yi-Yang Lo

Ching-Cheng Chen

Xiangzhu Yang

Shen-Wei Juan

Tsung-Kuang Chen

Liangliang Song

A communication device includes: a wired communication circuit, a wireless communication circuit and a bit stream converter. The wired communication circuit is configured to exchange information with a host system via wired communication. The wireless communication circuit is configured to o exchange information with a wireless communication device via wireless communication. The bit stream converter is configured to selectively perform bit stream conversion on a bit stream between the communication device and the host system according to frequency band information corresponding to the wireless communication.

Communication device and host system for reducing communication interference based on bit extension mechanism

A timing generator, a timing generating method and an associated control chip are provided, wherein the timing generator includes a receiving circuit, a transmitting circuit coupled to the receiving circuit, and a control unit respectively coupled to the receiving circuit and the transmitting circuit. The receiving circuit may be configured to receive a timing data set from a storage device. The transmitting circuit may be configured to select a specific signal type within multiple signal types according to the timing data set, and output an output signal having the specific signal type with a specific time length, wherein the timing data set indicates the specific signal type and the specific time length. The control unit may be configured to control operations of the receiving circuit and the transmitting circuit.

Timing generator, timing generating method, and associated control chip

A method for visualizing sound source energy distribution in an echoic environment comprises steps: arranging in an echoic environment a plurality of arrayed sound pickup units, wherein each sound pickup unit includes at least two microphones separated by a directive distance enabling the sound pickup unit to have a primary pickup direction; disposing the sound pickup units with the primary pickup directions thereof pointing toward a sound source in the echoic environment, and measuring the sound source by the sound pickup units to obtain a sound source-related parameter; substituting the directive distance and the parameter into an algorithm to make the parameter have directivity; and then substituting the parameter into an ESM algorithm to establish a sound source energy distribution profile. Thereby, the method can measure a sound source in a specified direction in an echoic environment and establish a visualized sound source energy distribution profile.

Method for visualizing sound source energy distribution in echoic environment

The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.

Opto-electronic device

This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.

Light emitting device

An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.

Optoelectronic device and method for manufacturing the same

A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.

Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof

Growing community of inventors

Hsinchu, Taiwan

Chun-Kai Wang