Industrial Technology Research Institute

Elan Microelectronics Corporation

Tsinghua University

Chun-Kai Liu

Ming-Ji Dai

Chih-Kuang Yu

Yu-Lin Chao

Ra-Min Tain

Shu-Jung Yang

Heng-Chieh Chien

Li-Ling Liao

Wei-Kuo Han

Ming-Che Hsieh

Suh-Yun Feng

Ming Kaan Liang

Jen-Hau Cheng

Sheng-Liang Li

Shin-Terng Chiang

Jiin Shing Perng

Cheng-Ta Ko

Ming-Te Lin

Shang-Fu Yeh

Shih-Hsien Wu

Ming-Sheng Leu

Chih-Chung Chiu

Shyi-Ching Liau

Chih-Cheng Hsieh

Kuang-Yu Tai

Chih-Ming Shen

Yu-Kon Chou

Chih-Ming Tzeng

John H Lau

Jin-Bao Wu

Po-Kai Chiu

Ming-Kaan Liang

Chih-Yuan Cheng

Yao-Shun Chen

Jenn-Dong Hwang

Rong-Chang Feng

Po-Hao Wu

Yuan-Cheng Huang

Ji-Yuan Syu

Yan-Bo Lin

Tsung-Chieh Cheng

Chung-Yen Hsu

Wen-Yan Chen

Chiao-Jen Cheng

Ker-Win Wang

Yen-Lin Tzeng

Power module housing

A power module including a circuit board, a chip, a first heat-conduction and insulation substrate and a second heat-conduction and insulation substrate is provided. The circuit board includes a board and a metal block embedded in the board and exposed from a first surface and a second surface of the board opposite to one another. The chip is disposed on a side of the second surface of the board corresponding to the metal block, and the chip is electrically and thermally connected to the metal block. The first heat-conduction and insulation substrate is located on a side of the first surface of the board to be disposed on the circuit board. The second heat-conduction and insulation substrate is electrically and thermally connected to the chip.

Power module

A plug-in type power module includes a power unit and a heat-transfer unit vertically disposed on the power unit and extending outwardly away from two sides of the power unit. A first ceramic layer is disposed between the power unit and the heat-transfer unit. Therefore, heat generated by the power unit can be transferred from the first ceramic layer to the heat-transfer unit to increase the speed of heat dissipation. A subsystem having the plug-in type power module is also provided.

Plug-in type power module and subsystem thereof

A power module including a plurality of substrates, a plurality of power devices, and a heat dissipation assembly is provided. The substrates are located on different planes and surround an axis. Each of the substrates extends along the axis. The power devices electrically connected with each other are disposed on the substrates respectively. The heat dissipation assembly is disposed on the substrates and opposite to the power devices. Heat generated from the power devices is transferred to the heat dissipation assembly through the substrates.

An intelligent diagnosis system for a power module. The system includes a power module, a hardware checking module and a diagnostic module. The power module has a temperature sensing element for obtaining a temperature difference between a starting minimum temperature and a current temperature. The hardware checking module has a current sensing element, a voltage sensing element and a magnetic coupling closed loop detection element for obtaining the current, the output voltage and the input voltage of the power module, and the hardware loop status, respectively. The diagnostic module calculates the number of cycles that have been operated, a measured impedance and an instantaneous power based on those measurement results, and calculating a risk index based on the number of cycles that have been operated, the temperature difference, the measured impedance, the instantaneous power and the hardware loop status, thereby determining the accumulation of the abnormality index record.

Intelligent diagnosis system for power module and method thereof

A power module and a manufacturing method thereof are provided, and the power module includes a carrier substrate, an interconnection layer, a first chip, a second chip, a ceramic bonding substrate, a top interconnection layer and a lead frame. The interconnection layer is disposed on the carrier substrate. The first chip and the second chip are disposed on the interconnection layer, and electrically connected to the interconnection layer. The ceramic bonding substrate is disposed on the interconnection layer, and is disposed in between the first chip and the second chip so as to separate the first chip from the second chip. The top interconnection layer is disposed on the ceramic bonding substrate, covers the first chip and the second chip, and is electrically connected to the first chip and the second chip. The lead frame is disposed on the top interconnection layer and electrically connected to the top interconnection layer.

Power module and manufacturing method thereof

A waste heat exchanger may include an inner tube, an outer tube, a fin assembly and a plurality of heat electric modules The inner tube has a plurality of holes. Disposed inside the inner tube is a plurality of inlet channels and a plurality of outlet channels. The plurality of inlet channels and the plurality of outlet channels are disposed to correspond to each other. The plurality of inlet channels and the plurality of outlet channels are connected to the plurality of holes. A fluid flows through the plurality of inlets and the plurality of holes to get into the outlet channels. The outer tube is disposed outside the inner tube. The conductive assembly is positioned between the inner tube and the outer tube. The conductive assembly is disposed on an outside surface of the inner tube and an inside surface of the outer tube.

Waste heat exchanger

An active pixel sensor device and the method thereof include an active pixel sensing array and a synchronous reading circuit. The active pixel sensing array is formed by a plurality of sensing pixels disposed in a form of an array. Each sensing pixel has a power terminal. The synchronous reading circuit connects to the power terminals of all sensing pixels, detects a summation of currents flowing through all sensing pixels, converts the summation of currents to an output signal, and outputs the output signal that represents the optical sensing information. In addition to reading each sensing pixel, the active pixel sensor device further controls the synchronous reading circuit to read the output signal corresponding to the summation of currents of all sensing pixels. The active pixel sensor device using the same active pixel sensing array can be applied to large-area sensing.

Active pixel sensor device and operating method of the same

A power module includes a first substrate, at least two power elements, at least one first conductive structure and at least one leadframe. The first substrate includes a dielectric frame, two first fan-out circuit structure layers and two dielectric plates. The two first fan-out circuit structure layers are respectively disposed on two opposite surfaces of the dielectric frame, the two dielectric plates are respectively disposed on the two first fan-out circuit structure layers, each of the dielectric plates has at least one opening, and the opening and the corresponding first fan-out circuit structure layer form a concavity. The two power elements are respectively embedded in the two concavities. The two power elements are electrically connected to each other through the first conductive structure. The leadframe disposed at the first substrate is electrically connected to the two power elements, and is partially extended outside the first substrate.

The present invention is related to an optical recognition system and a method thereof, and more particularly to an optical recognition system and a method that adopts a single-slope analog-to-digital converter to proceed a single-slope analog-to-digital conversion in order to have an image with a wide dynamic range.

Optical recognition system and method thereof

An array of active pixel sensors and an array of sampling circuits of an active image sensor are divided into sub-arrays in operation so that a sampling time and a readout time in a frame overlap to each other to shorten the total readout time of a frame. In an embodiment, a first sub-array of sampling circuits samples a first sub-array of active pixel sensors during a readout circuit reads out sampled signals from a second sub-array of sampling circuits, or the second sub-array of sampling circuits samples a second sub-array of active pixel sensors during the readout circuit reads out sampled signals from the first sub-array of sampling circuits.

Sensing device and method for operating same

A semiconductor device including a silicon substrate, a plurality of silicon nanowire clusters, a first circuit layer and a second circuit layer. The silicon substrate has a first surface, a second surface opposite to the first surface and a plurality of through holes. The silicon nanowire clusters are disposed in the through holes of the silicon substrate, respectively. The first circuit layer is disposed on the first surface and connected to the silicon nanowire clusters. The second circuit layer is disposed on the second surface and connected to the silicon nanowire clusters.

Semiconductor device

A thermoelectric apparatus includes a first and a second assemblies, at least a first and a second heat conductors. The first assembly includes a first and a second substrates, and several first thermoelectric material sets disposed between the first and second substrates. The first substrate has at least a first through hole. The second assembly includes a third and a fourth substrates, and several second thermoelectric material sets disposed between the third and fourth substrates. The fourth substrate has at least a second through hole. Each of the first and second thermoelectric material sets has a p-type and an n-type thermoelectric element. The first and second heat conductors respectively penetrate the first and second through holes. Two ends of the first heat conductor respectively connect the second and fourth substrates, while two ends of the second heat conductor respectively connect the first and third substrates.

Thermoelectric apparatus and method of fabricating the same

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Taipei, Taiwan

Chun-Kai Liu